Лаборатория физики и технологии трёхмерных наноструктур

ПУБЛИКАЦИИ



1996

  1. Prinz V.Ya., Panaev I.A., Vorob’ev A.B., Preobrazhensky V.V., Semyagin B.R., Transport properties of AlAs/GaAs multilayer structures grown on (311)A GaAs substrates, 23rd International Symposium on Compound Semiconductors, St. Peterburg, Russia, 1996, с. 19-21.
  2. Prinz V.Ya., Seleznev V.A., Vorob’ev A.B., Gutakovsky A.K., Tokarev A.S., Application of controllable crack formation for fabrication nanoelectronic device elements, 23rd International Symposium on Compound Semiconductors, St. Petersburg, Russia, 1996, p. 37-39.
  3. Prinz V.Ya., Seleznev V.A., Vorob’ev A.B., Fabrication and transport studies of ultra- narrow quantum wires (QW) and QW supperlattices, Ninth International Conference Superlattices, Microstructures and Microdevices, Liege, Belgium, 1996, ThPPT-37.
  4. Panaev I.A., Prinz V.Ya., Vorob’ev A.B., Preobrazhensky V.V., Semyagin B.R., “Transport properties of AlAs/GaAs multilayer structures grown on (311)A GaAs substrates”, 9th International Conference on Superlattices, Microstructures and Microdevices, Liege, Belgium, 1996.
  5. Prinz V.Ya., Buldygin A.F., “Contactless high-field microwae characterzation of multilayer semiconductor structures”, Abstracts of Third Intern. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC96), Freiburg, 1996, p.80-84.
  6. Baksheyev D.G., Tkachenko V.A., Gorokhov E.B., Prinz V.Ya., Nejoh H., Crack-based single-molecule single-electron transistor, in Abstracts of Single Electron Nanoelectronics, 190th Meeting of The Electrochemical Society, San-Antonio, Texas, October 6-11, 1996.
  7. Prinz V.Ya., Seleznev V.A., Gutakovsky A.K., Novel technique for fabrication one- and two-dimensional systems. Surface Science, 1996, 361/362, p. 886-889.
  8. Prinz V.Ya., Seleznev V.A., Samoylov V.A., Gutakovsky A.K., Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures, Microelectronic Engineering, 1996 (30), p. 439-442.
  9. Володин В.А., Ефремов М.Д., Принц В.Я., Преображенский В.В., Семягин Б.Р., Наблюдение локализации LO-фононов в квантовых проволоках GaAs на фасетированной поверхности (311)А. Письма в ЖЭТФ, 1996, т. 63, вып. 12. с. 942-946.
  10. Yakunin M.V., Arapov Yu.G., Gorodilov N.A., Neverov V.N., Buldigin A.F., Vorob’ev A.B., Panaev I.A., Prinz V.Ya., Preobrazhenaky V.V., Seyagin B.R., Quantum Hall effect in AlAs/GaAs/AlAs(311) a structures with two- and one-dimentional conductivities, Nanostrucures: Physics and technology, International Symposium, St. Petersburg, Russia, 1996, p. 48-51.