Лаборатория физики и технологии трёхмерных наноструктур

ПУБЛИКАЦИИ



1995

  1. V.Ya. Prinz, I.A. Panaev, A.B. Vorob’ev, V.V. Preobrazhensky, B.R. Semyagin, A.K. Gutakovsky, Electrical properties of AlGaAs/GaAs multilayer structures grown on (311)A GaAs substrates, International Symposium “Nanostructures: Physics and Technology”, Санкт-Петербург, 1995, с. 28.
  2. Prinz V.Ya., Panaev I.A., Vorob’ev A.B., Preobrazhensky V.V., Semyagin B.R., Gutakovsky A.K., Transport properties of AlGaAs/GaAs multilayer structures grown on (311)A GaAs substrates, International Conference “Physics of Low-Dimensional Structures”, Дубна, 1995.
  3. Prinz V.Ya., Seleznev V.A., Gutakovsky A.K., Novel technique for fabrication one- and two-dimensional systems. Eleventh International Conference on the Electronic Properties of Two-Dimensional Systems, Nottingham, U.K., 1995, p. 493-494.
  4. Prinz V.Ya., Seleznev V.A., Samoylov V.A., Gutakovsky A.K., Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures. International Conference “Micro- and Nano Engineering”, Aix-en-Provence, France, 1995, P3. p.45-51.
  5. Prinz V.Ya., Seleznev V.A., Gutakovsky A.K., New concepts for fabrication of atomic-scale elements using controllable formation of ultra-thin cracks in heterostructures. International Symposium “Heterostructures in Science and Technology” Wurzburg, Germany, 1995, p.112-113.
  6. Prinz V.Ya., Seleznev V.A., Tkachenko V.A., Tunneling processes in the metallic and semiconductor wires broken with ultra-thin cracks. International Symposium “Nanostructures: Physics and Technology”, St. Peterburg, Russia, 1995, p.262.
  7. Prinz V.Ya., Seleznev V.A., Gutakovsky A.K., Novel technology for fabrication of nanoelectronic elements. International Symposium “Nanostructures: Physics and Technology”, St. Peterburg, Russia, 1995, p. 391-401.
  8. Патент 1463083 (Россия). Матричный фотоприемник. В.Я. Принц. Опубл. в Б.И., № 14, 1995.
  9. Патент 1306407 (Россия). Полупроводниковый прибор. В.Я. Принц, П.А. Бородовский, А.Ф. Булдыгин. Опубл. в Б.И., №11, 1995.
  10. Gorokhov E.B., Noskov A.G., Prinz V.Ya., Stress generation and relaxation in passivating films and its new application in nanolithography. Material Science Forum. 1995, 185-188, p. 129.
  11. M.D. Efremov, V.A. Volodin, V.Ya. Prinz, V.V. Preobrazhensky, B.R. Semyagin, Raman polarization scattering in system of quantum wires on facet 311 surface of GaAs, “Nanostructures: Physics and Technology”, St. Peterburg, Russia, 1995, p. 201.
  12. Речкунов С.Н., Самойлов В.А., Принц В.Я., Исследование глубоких уровней в буферных слоях эпитаксиальных структур арсенида галлия, предназначенных для изготовления полевых транзисторов с барьером Шоттки и интегральных схем, Микроэлектроника, 1995, т. 24, с. 389-392.