Laboratory of Nonequilibrium Semiconductor Systems

PUBLICATIONS

1995

1. А.В.Двуреченский, А.А.Каранович, А.В.Рыбин. Механизм дефектообразования в кристаллах при неупругом торможении высокоэнергетических ионов. ЖЭТФ, 1995, т.107, вып.2, с.493-503.
2. I.V.Antonova, A.V.Dvurechenskii, A.A.Karanovich, A.V.Rybin, S.S.Shaimeev, H.Klose. Removal of Electrically Active Defects in Silicon by 340 MeV Xe Ion Bombardment. Phys. Stat. Sol. (a), 1995, v.147, p.K1-K3.
3. A.A.Karanovich, S.I.Romanov, V.V.Kirienko, A.M.Myasnikov, V.I.Obodnikov. A secondary ion mass spectrometry study of p+ porous silicon. J. Phys. D: Appl. Phys., 1995, v.28, p.2345-2348.
4. A.I.Yakimov, N.P.Stepina, A.V.Dvurechenskii, L.A.Scherbakova. Low-dimensional hopping conduction in porous amorphous silicon. Physica B, 1995, v.205, p.298-304.
5. A.I.Yakimov, T.Wright, C.J.Adkins, A.V.Dvurechenskii. Magnetic correlations on the insulating side of the metal-insulator transition in amorphous Si1-x Mnx . Phys. Rev. B, 1995, v.51, №23, p.16549-16522.
6. L.N.Aleksandrov, A.N.Kogan, V.S.Mordyuk et al. The Study of Whisker Growth by the Monte Carlo Method. Phys. Stat. Sol. (A), 147 (1995) 461-466.