POST-GRADUATES AND CO-RESEARCHERS
Fan Zhang, "Formation of Germanium Nanoclusters in GeSixOy Films," Candidate of Sciences in Physics and Mathematics. Scientific Advisor – Vladimir A. Volodin. Novosibirsk State University, 2024.
Ksenia N. Astankova, "Obtaining Metastable GeO Films and Their Modification by Atomic Force Microscope Probe and Laser Irradiation," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisors – Evgeny B. Gorokhov and Vladimir A. Volodin. A. V. Rzhanov Institute of Semiconductor Physics, 2021.
Dmitriy A. Pokhabov, "Quantum Transport in Microconstrictions and Suspended Quantum Dot Contacts Based on GaAs/AlGaAs Heterostructures," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisor – Artur G. Pogosov. A. V. Rzhanov Institute of Semiconductor Physics, 2018.
Svetlana G. Cherkova, "Formation and Modification of Silicon Light-Emitting Quantum-Sized Nanostructures by Radiation Methods," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisors – Grigory A. Kachurin, Vladimir A. Volodin. A. V. Rzhanov Institute of Semiconductor Physics, 2018.
Natalia P. Stepina, "Charge Transfer via Localized States in Silicon-Based Nanostructures," Doctor of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Consultant – Anatoly V. Dvurechenskii. A. V. Rzhanov Institute of Semiconductor Physics, 2017.
Vladimir A. Volodin, "Phonon Localization and Phonon-Plasmon Interaction in Semiconductor Nanostructures," Doctor of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Consultant – Anatoly V. Dvurechenskii. A. V. Rzhanov Institute of Semiconductor Physics, 2017.
Ida E. Tyschchenko, "Physical Processes in Ion-Beam Synthesis of Silicon-Based Structures," Doctor of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Consultant – Anatoly V. Dvurechenskii. A. V. Rzhanov Institute of Semiconductor Physics, 2015.
Andrey A. Shevyrin, "Electron Transport and Elastic Properties of Suspended Semiconductor Nanostructures," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisor – Artur G. Pogosov. A. V. Rzhanov Institute of Semiconductor Physics, 2014.
Evgeny S. Koptev, "Charge Transfer in a System of Germanium Quantum Dots in Silicon," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisor – Natalia P. Stepina. A. V. Rzhanov Institute of Semiconductor Physics, 2012.
Alexey A. Bloshkin, "Electronic Structure of Strained Ge/Si Heterostructures with Vertically Aligned Ge Quantum Dots," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisor – Andrey I. Yakimov. A. V. Rzhanov Institute of Semiconductor Physics, 2011.
Viktor V. Kirienko, "Field Effect, Charge States, and IR Photoconductivity in Si-Based Heterostructures with Ge Quantum Dots," Candidate of Sciences in Physics and Mathematics in the specialty 01.04.10 "Physics of Semiconductors." Scientific Advisor – Andrey I. Yakimov. A. V. Rzhanov Institute of Semiconductor Physics, 2011.
N.V. Rogozina Formation, growth and structure of mercury diiodide. PhD phys.-math. sci. Solid-state physics, NSU — ISP SB RAS. Supervised by L.N. Alexandrov, 1987;
B.P. Surin Internal friction and its application in studying the relaxation and anealing of silicon defects. PhD phys.-math. sci. Solid-state physics, MSU — ISP SB RAS. Supervised by L.N. Alexandrov, 1987;
A.A. Karanovich Changes in silicon paramagnetic defects structure under electron and neutron radiation. PhD phys.-math. sci. Semiconductor physics. Supervised by A.V. Dvurechenskii, 1988;
V.S. Getalov Investigation of growth conditions of structurally perfect paratelluride crystal faces from themelting with Chokhralski method. PhD phys.-math. sci. Solid-state physics, SDTB of Monocrystals SB RAS — Kharkov RA ''Monocrystalreactive''. Supervised by L.N. Alexandrov, 1988;
S.V. Lozovsky Silicon band sublimational recrystallisation. PhD phys.-math. sci. Solid-state physics. Novocherkassk STU — ISP SB RAS. Supervised by L.N. Alexandrov, 1988;
A.T. Shliakhov Effect of doping on structural defects composition in GaAs. PhD phys.-math. sci. Solid-state physics, ISP SB RAS — Leningrad Ped. Inst. Supervised by L.N. Alexandrov, 1990;
V.A. Menshikova Silicon avalanche photodiode. PhD phys.-math. sci. Semiconductor and insulator physics, ISP SB RAS — IAP ''Pulsar''. Supervised by L.N. Alexandrov, 1990;
S.N. Koliadenko Oriented crystallisation of from silicon layers melt on structures Si02/Si under impulse millisecond heating. PhD phys.-math. sci. Semiconductor physics. Supervised by A.V. Dvurechenskii, 1991;
A.I. Yakimov Hopping conduction and electron correlations in silicon with impurities that lead to deep levels. PhD phys.-math. sci.Semiconductor and insulator physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 1991;
Yu.A. Manzhosov Silicon films recrystallisation in layer structures under nanosecond laser impact. PhD phys.-math. sci. Solid-state physics. ISP SB RAS. Supervised by A.V. Dvurechenskii, 1992;
O.A. Kuliasova Modeling of thermal and thermoelastic fields, phase transitions under impulse heating in multilayer semiconductor structures. PhD phys.-math sci.Solid-state physics, ISP SB RAS. Supervised by L.N. Alexandrov, A.V. Dvurechenskii, 1992;
A.V. Rybin Investigation of quantum dots spatial distribution in semiconductors radiated by high-energy ions. PhD phys.-math. sci. Semiconductor and insulator physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 1995;
L.A. Shcherbakova Hopping conduction of amorphous porous silicon. PhD phys.-math. sci. Solid-state physics, IS SB RAS. Supervised by A.V. Dvurechenskii and A.I. Yakimov, 1997;
P.L. Novikov Simulation of porous silicon formation processes and homoepitaxy on its surface. PhD phys.-math. sci. Semiconductor and insulator physics, ISP SB RAS. Supervised by L.N. Alexandrov and A.V. Dvurechenskii, 2000;
A.I. Yakimov Electron phenomena in Ge and Si quantum dots arrays. Doc. phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2001;
A.V. Nenashev Simulation of Ge QDs electron structure in Si. PhD phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2004;
V.A. Zinovyev Processes on silicon surface at the low-energy ion impact under MBE. PhD phys.-math. sci. Semiconductor physics. ISP SB RAS. Supervised by A.V. Dvurechenskii, 2004;
A.G. Pogosov Kinetic phenomena in solid electron billiards. Doc. phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Chaplik, 2007;
A.G. Milekhin Spectroscopy of oscillation states of low-dimensional semiconductor systems. Doc. phys.-math. sci. Physics of condensed states, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2006;
Zh.V. Smagina Effects of low-energy ion impact under heteroepitaxy of Ge/Si. PhD phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2008;
Aigiul F. Zinovyeva Spin relaxation in tunnel-bound Ge/Si quantum dot arrays. PhD in phys.-math. sci. Semiconductor physics. ISP SB RAS. Supervised by Anatoly V. Dvurechenskii, Doc. phys.-math sci. Professor, RAS Corresponding member;