PATENTS
S.N. Koliadenko, A.V. Dvurechenskii. A way of silicon-on-insulator monocrystalline islands fabrication. AC N 1567947, 1987
A.A. Karanovich, A.V Dvurechenskii, P.L. Khripkov. A way of EPR signal registration in solids. AC N 1508715, 1987
I.A. Godnik, A.V. Dvurechenskii, B.P. Kashnikov, G.A. Potemkin, A.V Kucheriavy. The device for anealing semiconductor wafers. AC N 1512397, 1987
I.A. Ryazantsev, A.V. Dvurechenskii. Thermoindicator. AC N 1508715, 1987
I.A. Ryazantsev, A.V. Dvurechenskii., V.I. Fedchenko. Thermoindicator. AC N 1402038, 1988
Yu.A. Manzhosov, A.V. Dvurechenskii, S.I. Romanov. A way of developing SOI structures. AC N 1637599, 1989
A.V. Dvurechenskii, L.N. Alexandrov, V.Yu Balandin. A way of developing structures with a burried metal layer. Patent N 2045795. Inventions Bullet., 1995, N 28
I.A. Ryazantsev, A.V. Dvurechenskii, N.H. Talipov, A.M. Mishchenko. A way of obtaining n-type conductivity layers in p-type samples of CdxHg1-xTe. Patent N 2035804. Invention Bullet., 1995, N14
I.A. Ryazantsev, A.V. Dvurechenskii. Multi-element IR detector on hot electrons with the longwave interface of 0.2 eV. Patent N 2065228. Inventions Bullet., 1996, N 22
V.V. Suprunchik. The application for receiving the RF patent for invention N 97101796 dated 12.02.97. A way of signal transition...
S.I. Romanov, V.V. Kirienko, L.V. Sokolov, V.I. Mashanov, M.I. Lamin. A way of developing the ''semiconductor-on-porous-silicon'' structure. Applic. N 97103165/25 dated 4.04.97
S.I. Romanov, V.V. Kirienko, L.V. Sokolov, V.I. Mashanov, M.I. Lamin, B.I. Fomin. A way of developing the SOI structure. Applic N 97103424/25 dated 6.04.97
Yu.I. Yakovlev. Tetraammintrisiliconfluoride. Applic N 97109606 dated 6.06.97
Yu.I. Yakovlev. A way of obtaining silicon. Applic. N 97109607/25 dated 6.06.97
V.V. Suprunchik. Application for receiving the RF patent for the invention dated 10.01.98. Acoustic locator
Yu.I. Yakovlev, S.I. Romanov, V.V. Kirienko. A way of silicon oxidation. Applic. N 99110763/12 dated 25.05.99
Yu.I. Yakovlev, S.I. Romanov, V.V. Kirienko. A way of silicon purification. Patent N 2165481, received 10.05.2001
A.V. Dvurechenskii, A.P. Kovchavtsev, G.L Kuryshev, I.A. Ryazantsev. Multielement PD device with the longwave absorption interface to 7 µm. Applic. N 2000109106/28 prior. 11.04.2000
S.I. Romanov, V.V. Kirienko, M.N. Cheyukov. Invention Patent: A way of obtaining the SOI structure, N 2331949, 2008
V.A. Ambrister, A.V. Dvurechenskii, Zh.V. Smagina. Invention Patent: A way of atom and molecular fluids ionization and the device for its realisation, N 2370849 dated 20.10.2009
N.V. Vandysheva, S.I. Romanov. Applic. for Invention: A way of developing a silicon multichannel matrix in monolithic framing, N 200910874/28, 2009
N.V. Vandysheva, S.S. Kosolobov, S.I. Romanov. Applic. for Invention: A way of obtaining a silicon microchannel matrix, N 2009132571/28, 2009
S.G. Mironov, S.I. Romanov. Applic. for Invention: A way of liquid matter introduction in microcapsules and the device for its realisation, N 2009125254 dated 01.07.2009
P.P. Laktionov, O.B. Vainer, I.A. Zaporozhchenko, I.A. Pyshnaya, D.V. Pyshny, E.V.Dmitrienko, S.I. Romanov, V.V. Vlasov. Applic. for Invention N 2009141429 dated 09. 11.2009: A way of selecting viable cell population from biological liquids