STAFF MEMBERS
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Zhanna V. Smagina Senior Researcher,
Tel: +7 (383) 333-25-19 RSCI Author ID: 113140 ORCID: 0000-0003-0778-5894 Web of Science ResearcherID: ABA-8839-2020 Scopus Author ID: 7801695134 ResearchGate Profile:Jv-Smagina |
Scientific activities:
Experimental and theoretical studies of epitaxial structures based on Ge and Si, development of methods for growing quantum dots from ion-molecular beams on planar and structured substrates, creation of structures with an array of spatially ordered GeSi quantum dots, development of methods for embedding ordered quantum dots into photonic crystals and resonators.
Education:
1994 – Graduated from the Tomsk State University of Control and Radioelectronics Systems. Specialty – Microelectronics and semiconductor devices.
2008 — Defended her PhD thesis in "Effects of low-energy ion impact under Ge epitaxy on Si."
Professional Experience:
- A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk: From 1999 to Present — Engineer, Researcher, Senior Researcher.
Teaching Experience:
- Scientific supervisor of student theses. Head of the Department of Postgraduate Studies, ISP SB RAS, development of curricula and programs, until 2021.
Awards and Honors:
- Prize to аcademician V. A. Koptyug for the cycle of works "Optical spectroscopy and electronic structure of Ge / Si nanostructures with molecules from Ge quantum dots" in 2016
Selected publications:
From 2000 to 2024, 74 scientific papers have been published. Among them:
V. A. Zinovyev, M. V. Stepikhova, Zh. V. Smagina, A. F. Zinovieva, A. A. Bloshkin, E. E. Rodyakina, M. S. Mikhailovskii, M. I. Petrov, A. V. Novikov. Selective excitation of photon modes in silicon microdisk resonator by deterministic positioning of GeSi quantum dots. J. Appl. Phys. 136, 153103 (2024).
V. A. Zinovyev, Zh. V. Smagina, A. F. Zinovieva, E. E. Rodyakina, A. V. Kacyuba, K. N. Astankova, V. A. Volodin, K. V. Baryshnikova, M. I. Petrov, M. S. Mikhailovskii, V. A. Verbus, M. V. Stepikhova, A. V. Novikov. Collective Modes in the Luminescent Response of Si Nanodisk Chains with Embedded GeSi Quantum Dots. Photonics 10, 1248 (2023).
V. A. Zinovyev, Zh. V. Smagina, A. F. Zinovieva, A. A. Bloshkin, A. V. Dvurechenskii, E. E. Rodyakina, M. V. Stepikhova, A. V. Peretokin, A. V. Novikov. Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks. Nanomaterials 13, 2422 (2023).
Zh. V. Smagina, V. A. Zinovyev, A. F. Zinovieva, M. V. Stepikhova, A. V. Peretokin, E. E. Rodyakina, S. A. Dyakov, A. V. Novikov, A. V. Dvurechenskii. Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate. Journal of Luminescence 249, 119033 (2022).
S. A. Rudin, V. A. Zinovyev, Zh. V. Smagina, P. L. Novikov, A. V. Nenashev, K. V. Pavsky. Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates. Journal of Crystal Growth 593, 126763 (2022).
S. A. Rudin, V. A. Zinovyev, Zh. V. Smagina, P. L. Novikov, A. A. Shklyaev, A. V. Dvurechenskii. Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands. J. Appl. Phys. 131, 035302 (2022).
V. A. Zinovyev, A. F. Zinovieva, Zh. V. Smagina, A. V. Dvurechenskii, A. K. Gutakovskii, L. I. Fedina, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi. Si-based light-emitters synthesized with Ge ion bombardment. J. Appl. Phys. 130, 153101 (2021).
A. V. Novikov, Zh. V. Smagina, M. V. Stepikhova, V. A. Zinovyev, S. A. Rudin, S. A. Dyakov, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, A. V. Dvurechenskii. One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate. Nanomaterials 11, 909 (2021).
Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinovyev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii. Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals. Semiconductors. Semiconductors 54, 853 – 859 (2020).
Zn. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskiy, S. A. Gusev, A. V. Novikov, A. V. Dvurechenskii. Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals. Semiconductors 53, 1329 – 1333 (2019).
Zh. V. Smagina, V. A. Zinovyev, S. A. Rudin, P. L. Novikov, E. E. Rodyakina, A. V. Dvurechenskii. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography. J. Appl. Phys. 123, 165302 (2018).
Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya, V. A. Armbrister, V. A. Zinovyev, N. P. Stepina, A. F. Zinovieva, A. V. Nenashev, A. K. Gutakovskii. Linear Chains of Ge/Si Quantum Dots Grown on a Prepatterned Surface Formed by Ion Irradiation. Semiconductors 49, 749 – 752 (2015).
Zh. V. Smagina, N. P. Stepina, V. A. Zinovyev, P. L. Novikov, P. A. Kuchinskaya, A. V. Dvurechenskii. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography. Appl. Phys. Lett. 105, 153106 (2014).
J. V. Smagina, V. A. Zinovyev, A. V. Nenashev, A. V. Dvurechenskii, V. A. Armbrister, S. A. Teys. Self-Assembly of Germanium Islands under Pulsed Irradiation by a Low-Energy Ion Beam during Heteroepitaxy of Ge/Si(100) Structures. JETP 109, 517 – 527 (2008).
A. V. Dvurechenski, V. A. Zinov’ev, Zh. V. Smagina. Self-Organization of an Ensemble of Ge Nanoclusters upon Pulsed Irradiation with Low-Energy Ions during Heteroepitaxy on Si. JETP Letters 74, 267 – 269 (2001).