Laboratory of Nonequilibrium Semiconductor Systems

STAFF MEMBERS

Vladimir A. Volodin

Leading Researcher,
Doctor of Science in Physics and Mathematics

Tel: +7 (383) 333-24-70
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RSCI Author ID: 36921

RSCI SPIN-code: 3804-1930

ORCID: 0000-0002-1022-0731

Web of Science ResearcherID: S-1809-2018

Scopus Author ID: 7003730532

ResearchGate Profile: Vladimir-Volodin

Research Interests:

Semiconductors, semiconductor nanostructures, defects, Raman scattering, luminescence, phonons, phonon-plasmon interaction, laser processing of nanostructures, transistors, solar cells, dielectrics, MOS structures, memristors.

Education:

  • 1991 — Graduated from Novosibirsk State University with a specialization in Physics, Department of Semiconductor Physics. Diploma thesis: "Studies of Radiation and Thermally Stimulated Relaxation of Stresses in Silicon-on-Sapphire Structures."
  • 1999 — Defended Candidate of Sciences dissertation, titled "Investigation of Semiconductor Nanostructures Based on Si and GaAs Using Raman Scattering."
  • 2017 — Defended Doctor of Sciences dissertation, titled "Phonon Localization and Phonon-Plasmon Interaction in Semiconductor Nanostructures."

Professional Experience:

  • 1991 – 1993 — Engineer-Researcher.
  • 1993 – 1997 — Junior Researcher.
  • 1997 – 2001 — Researcher.
  • 2001 – 2021 — Senior Researcher.
  • 2021 – Present — Leading Researcher.

Teaching Experience:

  • 1997 – 2000 — Assistant Professor, Department of General Physics, Physics Department, Novosibirsk State University.
  • 2000 – 2002 — Senior Lecturer, Department of General Physics, Physics Department, Novosibirsk State University.
  • 2003 – 2018 — Associate Professor, Department of General Physics and Department of Automation of Physical and Technical Research, Physics Department, Novosibirsk State University.
  • 2018 – Present — Professor, Novosibirsk State University (Courses: "Physical Foundations of Microelectronics," "Vibrational Spectroscopy," Seminars on Electrodynamics).
  • 2005 — Received the title of Associate Professor in "Semiconductor Physics".

Under the supervision of V. A. Volodin, 17 bachelor's and 12 master's students (including five international students from China) from the Department of Physics, NSU, as well as 3 bachelor's and 2 master's students from NSTU, have graduated. V. A. Volodin supervises graduate students at the Department of Physics, NSU (including international students from China) and A. V. Rzhanov Institute of Semiconductor Physics, SB RAS. Under his supervision, five candidates of sciences have defended their dissertations, including one dissertation from China.

The research results of V. A. Volodin are presented in more than 300 publications (according to ISI Web of Science), with a total citation count exceeding 2800 and an h-index of 25.

Selected Publications:

  1. M. D. Efremov, V. V. Bolotov, V. A. Volodin, L. I. Fedina, E. A. Lipatnikov. Excimer laser and RTA stimulation of solid phase nucleation and crystallization in amorphous silicon films on glass substrates. J. Phys.: Condens. Matter 8, 273 – 286 (1996).

  2. V. A. Volodin, M. D. Efremov, V. A. Gritsenko, S. A. Kochubei. Raman study of silicon nanocrystals formed in SiNx films by excimer laser or thermal annealing. Appl. Phys. Lett. 73, 9, 1212 – 1214 (1998).

  3. N. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. P. Soshnikov, V. A. Shchukin, V. M. Ustinov, A. Yu. Egorov, A. E. Zukov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. P. Semyagin, D. Bimberg, Zh. I. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surface. J. Electron. Mater. 30, 463 – 470 (2001).

  4. E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov, A. K. Gutakovskii, V. A. Shvets, A. G. Borisov, M. D. Efremov. Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films. Semiconductors 39, 10, 1168 – 1175 (2005).

  5. V. A. Volodin, M. D. Efremov, A. S. Deryabin, L. V. Sokolov. Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters. Semiconductors 40, 11, 1314 – 1320 (2006).

  6. V. Chis, I. Yu. Sklyadneva, K. A. Kokh, V. A. Volodin, O. E. Tereshchenko, E. V. Chulkov. Vibrations in binary and ternary topological insulators: First-principles calculations and Raman spectroscopy measurements. Phys. Rev. B 86, 174304 (2012).

  7. В. А. Володин, В. А. Сачков. Улучшенная модель локализации оптических фононов в нанокристаллах кремния. ЖЭТФ 143, 1, 100 – 108 (2013).

  8. V. A. Volodin, D. I. Koshelev. Quantitative Analysis of Hydrogen in Amorphous Silicon Using Raman Scattering Spectroscopy. J. Raman Spectrosc. 44, 1760 – 1764 (2013).

  9. V. A. Volodin, D. V. Marin, V. A. Sachkov, E. B. Gorokhov, H. Rinnert, M. Vergnat. Applying of Improved Phonon Confinement Model for Analysis of Raman Spectra of Germanium Nanocrystals. ЖЭТФ 145, 1, 77 – 83 (2014).

  10. V. A. Volodin, M. P. Sinyukov, B. R. Semyagin, M. A. Putyato, V. V. Preobrazhenskiy. Experimental observation of interface-phonon-plasmon mode in n-GaAs/i-GaAs heterostructure. Solid State Communications 224, 21 – 23 (2015).

  11. D. M. Zhigunov, G. N. Kamaev, P. K. Kashkarov, and V. A. Volodin. On Raman Scattering Cross Section Ratio of Crystalline and Microcrystalline to Amorphous Silicon. Appl. Phys. Lett. 113, 023101 (2018).

  12. V. A. Volodin, V. Mortet, A. Taylor, Z. Remes, T. H. Stuchliková, J. Stuchlik. Raman scattering in boron doped nanocrystalline diamond films: manifestation of Fano interference and phonon confinement effect. Solid State Communications 276, 33 – 36 (2018).

  13. V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, A. A. Gismatulin, A. Chin, and M. Vergnat. Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films. Appl. Phys. Lett. 114, 233104 (2019).

  14. Zhang Hao, S. A. Kochubei, A. A. Popov, V. A. Volodin. On Raman Scattering Cross Section Ratio of Amorphous to Nanocrystalline Germanium. Solid State Communications 313, 113897 (2020).

  15. I. D. Yushkov, A. A. Gismatulin, I. P. Prosvirin, G. N. Kamaev, D. V. Marin, M. Vergnat. V. A. Volodin. Charge transport mechanism in GeOxSiO2 based MIS structures. Appl. Phys. Lett. 125, 242901 (2024).