STAFF MEMBERS

Polina A. Kuchinskaya

Senior Engineer

Tel: +7 (383) 333-25-19
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

RSCI Author ID: 1072052

RSCI SPIN-code: 4357-0802

ORCID: 0000-0002-1010-6736

Web of Science ResearcherID: J-6059-2018

Scopus Author ID: 36608285700

ResearchGate Profile: P-Kuchinskaya

Scientific activities:

The work involves studying the surface morphology of various materials using atomic force microscopy and conducting data analysis of the obtained results. Document management and administrative duties in the laboratory, including responsibilities as a materially responsible person.

Education:

  • 2009 – Graduated from Novosibirsk State Technical University with a specialization in "Nanotechnology in Electronics."

  • 2012 – Completed a postgraduate program at the Institute of Semiconductor Physics SB RAS in "Semiconductor Physics," presenting a dissertation."

Professional Experience:

Institute of Semiconductor Physics SB RAS, Novosibirsk: Since 2009 — Senior Engineer.

Selected publications:

  1. V. A. Zinovyev, Zh. V. Smagina, A. F. Zinovieva, E. E. Rodyakina, A. V. Kacyuba, P. A. Kuchinskaya, K. N. Astankova, K. V. Baryshnikova, M. I. Petrov, M. S. Mikhailovskii, V. A. Verbus, M. V. Stepikhova, A. V. Novikov. High-Q states in the emission spectra of linear periodic chains of Si nanodisks with embedded GeSi quantum dots. Semiconductors 58 (5), 227 – 230 (2024).

  2. Z. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, A. V. Nenashev, P. A. Kuchinskaya, A. V. Dvurechenskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, A. V. Peretokin, M. V. Shaleev, S. A. Gusev. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals. Semiconductors 54, 853 –859 (2020).

  3. Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskiy, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. Semiconductors 52, 1150 – 1155 (2018).

  4. V. A. Zinovyev, A. F. Zinovieva, P. A. Kuchinskaya, Zh. V. Smagina, V. A. Armbrister, A. V. Dvurechenskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi. Strain-induced improvement of photoluminescence from the groups of laterally ordered SiGe quantum dots. Applied Physics Letters 110, 102101 (2017).