Laboratory of Nonequilibrium Semiconductor Systems

STAFF MEMBERS

Dmitriy A. Pokhabov

Senior Researcher,
Candidate of Science in Physics and Mathematics

Tel: +7 (383) 330-81-71
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RSCI Author ID: 869877

RSCI SPIN-code: 3207-3608

ORCID: 0000-0002-8747-0261

Web of Science ResearcherID: E-8106-2015

Scopus Author ID: 36989780500

ResearchGate Profile: Dmitriy-Pokhabov

Research Interests:

D. A. Pokhabov's scientific interests are focused on the experimental study of electron transport in semiconductor mesoscopic systems based on two-dimensional electron gas in GaAs/AlGaAs heterostructures. He has studied the hysteresis of magnetoresistance in point contacts in the quantum Hall effect regime, spin polarization in quantum point contacts, and the peculiarities of conductance quantization in multichannel quantum point contacts. Currently, he is experimentally investigating hydrodynamic effects in electronic transport caused by electronic viscosity.

Education:

  • 2009 — Graduated with a Bachelor's degree in Physics, Physics Department, Novosibirsk State University.
  • 2011 — Graduated with a Master's degree in Physics, Physics Department, Novosibirsk State University.
  • 2018 — Defended his Candidate of Science dissertation in the specialty 01.04.10 "Physics of Semiconductors" on the topic "Quantum transport in microconstrictions and suspended quantum point contacts based on GaAs/AlGaAs heterostructures." Scientific advisor – Dr. Sci. Arthur G. Pogosov.
  • 2024 — Awarded the academic title of Associate Professor in the scientific specialty 1.3.11 "Physics of Semiconductors."

Professional Experience:

A.V. Rzhanov Institute of Semiconductor Physics, SB RAS:

  • 2007 – 2014: Technician, Engineer.
  • 2014 – 2020: Junior Researcher.
  • 2020 – 2023: Researcher.
  • 2023 – Present: Senior Researcher.

Teaching Experience:

  • 2012 – 2017 — Assistant, Department of General Physics, Physics Department, Novosibirsk State University.
  • 2017 – 2019 — Senior Lecturer, Department of General Physics, Physics Department, Novosibirsk State University.
  • 2019 – Present — Associate Professor, Department of General Physics, Physics Department, Novosibirsk State University.

Since 2012, has been conducting seminar sessions for the courses "Electricity and Magnetism" and "Electrodynamics and Optics" for second-year students of the Physics Department at Novosibirsk State University (NSU).

Since 2012, has been a member of the NSU Subject Commission on Physics, participating in the development and review of tasks for the entrance exam and conducting entrance exams in physics for applicants and graduate school entrants at NSU.

Since 2009, has been a member of the jury for the school Olympiad "Your Path to Real Science" in physics (known as "Future of Siberia" until 2019). Since 2018, has been a member of the methodological commission of the international Olympiad Open Doors: Russian Scholarship Project for master's degree applicants, held with the support of the Ministry of Science and Higher Education of the Russian Federation.

Since 2015, has been regularly invited as an expert and jury member for school scientific and practical conferences such as the Open Regional Scientific and Practical Conference of School Students "Eureka," the Scientific and Practical Conference of School Students "Siberia," the All-Russian Competition of Youth Research Works named after V.I. Vernadsky, the Siberian Tournament of Young Physicists, and others.

From 2015 to 2017, conducted a summer school in physics for gifted children in the Republic of Khakassia to prepare for physics Olympiads. Since 2021, has been a member of the expert council of the Republican Center for Work with Gifted Children "Altair-Khakassia."

Awards and Honors:

  • Four-time recipient of the Presidential Scholarship for Young Scientists and Graduate Students (2012 – 2014, 2015 – 2017, 2018 – 2020, 2021 – 2023).
  • Two-time recipient of the A.V. Rzhanov Scholarship for Young Scientists of A. V. Rzhanov Institute of Semiconductor Physics, SB RAS (2015 – 2016, 2021 – 2022).
  • Four-time recipient of the Scholarship for Young Scientists of A. V. Rzhanov Institute of Semiconductor Physics, SB RAS (2011 – 2012, 2013 – 2014, 2017 – 2018, 2019 – 2020).
  • Recipient of the Novosibirsk Oblast Government Scholarship (2012).
  • Recipient of the Novosibirsk City Mayor's Scholarship (2012).
  • Awarded a letter of gratitude for conscientious work and in connection with the 60th anniversary of the founding of Novosibirsk State University.
  • Awarded a letter of gratitude from the Main Department of Education of the Novosibirsk City Administration (2016).
  • Awarded a letter of gratitude from the Ministry of Education and Science of the Republic of Khakassia (2015).
  • Diploma for the best work by young scientists presented at the XV Russian Conference on Semiconductor Physics (2022) for the work "Spontaneous structuring of the quantum point contact channel due to inter-electron interaction."
  • First-degree diploma for the best presentation "Multichannel transport in single quantum point contacts" at the Ural International Winter School on Semiconductor Physics – 2020.
  • First-degree diploma for the best presentation at the School of Young Scientists "Actual Problems of Semiconductor Nanosystems – 2019."
  • First-degree diploma at the XLIX International Student Conference "Student and Scientific-Technical Progress" (Novosibirsk, 2011) for the presentation "Hysteresis of magnetoresistance of two-dimensional electron gas in the quantum Hall effect regime."

Selected Publications:

Dmitriy A. Pokhabov is the co-author of more than 100 scientific papers and educational publications, including:

  1. D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev. Temperature Dependence of Electron Viscosity in Superballistic GaAs Point Contacts. Phys. Rev. Lett. 134, 026302 (2025).

  2. D. A. Egorov, D. A. Pokhabov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. G. Pogosov. Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing. Appl. Phys. Lett. 125, 112103 (2024).

  3. D. A. Pokhabov, A. G. Pogosov, A. A. Shevyrin, E. Yu. Zhdanov, A. K. Bakarov. Conductance Quantization Features in Multichannel Quantum Point Contacts. JETP Lett. 119, 5, 380 – 388 (2024).

  4. D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov. Scanning of Electronic States in a Quantum Point Contact Using Asymmetrically Biased Side Gates. JETP Lett. 117, 299 – 305 (2023).

  5. A. G. Pogosov, A. A. Shevyrin, D. A. Pokhabov, E. Yu. Zhdanov, S. Kumar. Suspended semiconductor nanostructures: physics and technology. J. Phys.: Condens. Matter 34, 263001 (2022).

  6. D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. A. Shklyaev. Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates. Appl. Phys. Lett. 118, 012104 (2021).

  7. D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. A. Shklyaev. Suspended quantum point contact with triple channel selectively driven by side gates. Appl. Phys. Lett. 115, 152101 (2019).

  8. D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact. Appl. Phys. Lett. 112, 082102 (2018).

  9. M. V. Budantsev, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. I. Toropov. Hysteretic Phenomena in a 2DEG in the Quantum Hall Effect Regime, Studied in a Transport Experiment. Semiconductors 48, 1423 – 1431 48, (2014).

  10. A. G. Pogosov, M. V. Budantsev, E. Yu. Zhdanov, D. A. Pokhabov, A. K. Bakarov, A. I. Toropov. Electron transport in suspended semiconductor structures with two-dimensional electron gas. Appl. Phys. Lett. 100, 181902 (2012).