Laboratory of Nonequilibrium Semiconductor Systems

STAFF MEMBERS

Daniil I. Sarypov

Engineer-Researcher, Postgraduate Student

Tel: +7 (383) 330-81-71
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RSCI Author ID: 1180285

RSCI SPIN-code: 3352-7080

ORCID: 0000-0003-1056-5235

Web of Science ResearcherID: JQI-5153-2023

Scopus Author ID: 57964154900

ResearchGate Profile: Daniil-Sarypov

Research Interests:

The area of scientific interests of D. I. Sarypov is connected with the experimental study of electron transport in semiconductor structures with reduced dimensionality, including in structures with enhanced electron-electron interaction. Of particular interest is the hydrodynamic description of electron transport, i.e. consideration of the collective motion of electrons as a flow of a viscous liquid. Such an analogy gives a clear physical picture of the phenomenon and allows promptly predicting the influence of interelectron interaction on the experiment.

Education:

  • 2022 — Graduated with a Bachelor's degree in Physics, Physics Department, Novosibirsk State University.
  • 2024 — Graduated with a Master's degree in Physics, Physics Department, Novosibirsk State University.
  • 2018 – Present — postgraduate student of the Physics Department of Novosibirsk State University.

Professional Experience:

  • 2021 – 2024: research practice at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.
  • 2024 – Present: Engineer-Researcher at Lab. 24 at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.

Awards and Honors:

  • Recipient of the A. V. Rzhanov personal scholarship for young scientists at the A. V. Rzhanov Institute of Semiconductor Physics (2024-2025).
  • First-degree diploma for the best presentation at the School of Young Scientists "Current Problems of Semiconductor Nanosystems - 2024".
  • First-degree diploma for the best presentation at the International Scientific Student Conference 2024.
  • Second-degree diploma for the best presentation at the XXV All-Russian Youth Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics (2023).

Selected Publications:

  1. D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev. Temperature Dependence of Electron Viscosity in Superballistic GaAs Point Contacts. Phys. Rev. Lett. 134, 026302 (2025).

  2. D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov. Multiwell Potential in a Trench-Type Quantum Point Contact. JETP Lett. 116 (6), 360 – 366 (2022).