STAFF MEMBERS
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Arthur G. Pogosov Chief Researcher, Phone: +7 (383) 330-81-71 RSCI Author ID: 21865 RSCI SPIN-code: 9050-4274 ORCID: 0000-0001-5310-4231 Web of Science ResearcherID: A-6109-2016 Scopus Author ID: 7003825904 ResearchGate Profile: Arthur-Pogosov |
Research Activities:
Specialist in transport phenomena in low-dimensional semiconductor systems, nanostructures, and nanoelectromechanical systems. Conducted research on quantum phenomena such as weak localization, mesoscopics, and the quantum Hall effect in two-dimensional electron systems. His co-authored works were the first to study mesoscopic oscillations of thermoelectric power. He investigated quantum transport in mesoscopic systems with quantum and dynamic chaos, including periodic lattices of artificial scatterers, describing magnetoresistance oscillations caused by geometric resonances. These studies established a connection between quantum interference phenomena (such as weak localization, Aharonov-Bohm oscillations) and features of classical electron transport in systems with dynamic chaos. Under his supervision, research was conducted on single electron billiards of various geometries, including thermomagnetic phenomena.
He studies kinetic phenomena in semiconductor structures with a two-dimensional electron gas separated from the substrate, phenomena caused by the enhancement of electron-electron interaction in such structures, spin-dependent and hydrodynamic effects. He investigates mechanisms of excitation and detection of mechanical oscillations in nanoelectromechanical systems, and the direct and inverse influence of mechanical oscillations on quantum electron transport.
Education:
1980 — Graduated from Novosibirsk State University, specializing in Physics.
1997 — Defended his Candidate of Sciences dissertation titled "Transport of Two-Dimensional Electrons in Periodic Lattices of Antidots".
2007 — Defended his Doctor of Sciences dissertation titled "Kinetic Phenomena in Solid-State Electron Billiards".
Professional Experience:
1985 – 2001: Trainee, Postgraduate Student, Junior Researcher, Researcher, Senior Researcher at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.
1999 – 2000: Internship at the Laboratory of Strong Magnetic Fields, National Center for Scientific Research, Grenoble, France.
2001 – 2004: Doctoral Student at the Physics Department of Tomsk State University. Concurrently, Senior Research Scientist at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.
2004 – Present: Senior Research Scientist, Leading Research Scientist, Chief Research Scientist at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.
Currently, he leads a group studying electron transport in low-dimensional systems, conducting experimental research on transport phenomena in nanostructures based on conducting semiconductor membranes separated from the substrate ("suspended" nanostructures), and their mechanical properties as nanoelectromechanical systems, including mechanisms of excitation and detection of oscillations, and the mutual influence of mechanical and electrical degrees of freedom.
Teaching Activities:
1995 – 2002: Assistant at the Department of Semiconductor Physics, Physics Department, Novosibirsk State University.
2002 – 2008: Associate Professor at the Chair of General Physics, Physics Department, Novosibirsk State University.
2002 – 2007: Associate Professor at the Chair of Semiconductor Physics, Physics Department, Novosibirsk State University.
2007 – Present: Professor at the Chair of Semiconductor Physics, Physics Department, Novosibirsk State University.
2008 – Present: Professor at the Chair of General Physics, Physics Department, Novosibirsk State University.
2011 – Present: Head of the Department of General Physics, Physics Department, Novosibirsk State University.
He delivers lectures on electrodynamics for 2nd-year students of the Physics Department, Novosibirsk State University (NSU), and lectures on quantum transport in low-dimensional systems for master's students at the Chair of Semiconductor Physics, NSU. He conducts seminars on electrodynamics for 2nd-year students of the Physics Department, NSU, and previously conducted seminars on solid-state theory for 4th-year students of the Department of Semiconductor Physics and 5th-year students of the Department of Quantum Optics, NSU (until 2011).
He is the chairman of the subject commission for physics in the school Olympiad "Your Path to Real Science" in physics ("Future of Siberia" until 2019). He has supervised bachelor's, master's, and PhD students at NSU, as well as three candidate dissertations. In 2020, he was awarded the academic title of Associate Professor in the specialty "Semiconductor Physics."
Awards and Honors:
Certificate of Appreciation from the Russian Academy of Sciences for long-term and fruitful work (1999).
Honorary Diploma from the Ministry of Education and Science of the Russian Federation (2016).
Honorary Diploma from the Siberian Branch of the Russian Academy of Sciences (2023).
Certificate of Appreciation from the Ministry of Education and Science of the Russian Federation (2024).
Public and Professional Activities:
Expert of the Russian Academy of Sciences.
Member of the academic councils of the Institute of Semiconductor Physics, SB RAS, Novosibirsk State University, and the Physics Department of Novosibirsk State University.
Academic Secretary of the specialized council D 003.037.01 for the defense of candidate and doctoral dissertations at the Institute of Semiconductor Physics, SB RAS.
Selected publications:
Arthur G. Pogosov is the co-author of more than 200 scientific papers and educational publications, including:
D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev. Temperature Dependence of Electron Viscosity in Superballistic GaAs Point Contacts. Phys. Rev. Lett. 134, 026302 (2025).
A. A. Shevyrin, A. G. Pogosov, A. K. Bakarov, A. A. Shklyaev, A. Naik. Intermode coupling in nanomechanical resonators as a key for tuning the effective nonlinearity. Phys. Rev. Lett. Phys. Rev. Applied 22, L061003 (2024).
D. A. Egorov, D. A. Pokhabov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. G. Pogosov. Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing. Appl. Phys. Lett. 125, 112103 (2024).
A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev, A. G. Pogosov. Electronic state back action on mechanical motion in a quantum point contact coupled to a nanomechanical resonator. Appl. Phys. Lett. 125, 192105 Appl. Phys. Lett. 125, 192105 (2024).
A. G. Pogosov, A. A. Shevyrin, D. A. Pokhabov, E. Yu. Zhdanov, S. Kumar. Suspended semiconductor nanostructures: physics and technology. J. Phys.: Condens. Matter 34, 263001 (2022).
D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. A. Shklyaev. Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates. Appl. Phys. Lett. 118, 012104 (2021).
D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. A. Shklyaev. Suspended quantum point contact with triple channel selectively driven by side gates. Appl. Phys. Lett. 115, 152101 (2019).
D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact. Appl. Phys. Lett. 112, 082102 (2018).
A. A. Shevyrin, A. G. Pogosov, A. K. Bakarov, A. A. Shklyaev. Piezoelectric Electromechanical Coupling in Nanomechanical Resonators with a Two-Dimensional Electron Gas. Phys. Rev. Lett. 117, 017702 (2016).
A. A. Shevyrin, A. G. Pogosov, M. V. Budantsev, A. K. Bakarov, A. I. Toropov, E. E. Rodyakina, A. A. Shklyaev. Actuation and transduction of resonant vibrations in GaAs/AlGaAs-based nanoelectromechanical systems containing two-dimensional electron gas. Appl. Phys. Lett. 106, 183110 (2015).
A. A. Shevyrin, A. G. Pogosov, M. V. Budantsev, A. K. Bakarov, A. I. Toropov, S. V. Ishutkin, E. V. Shesterikov. The features of ballistic electron transport in a suspended quantum point contact. Appl. Phys. Lett. 104, 203102 (2014).
M. V. Budantsev, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. I. Toropov. Hysteretic Phenomena in a 2DEG in the Quantum Hall Effect Regime, Studied in a Transport Experiment. Semiconductors 48, 1423 – 1431 (2014).
A. G. Pogosov, M. V. Budantsev, E. Yu. Zhdanov, D. A. Pokhabov, A. K. Bakarov, A. I. Toropov. Electron transport in suspended semiconductor structures with two-dimensional electron gas. Appl. Phys. Lett. 100, 181902 (2012).
A. G. Pogosov, M. V. Budantsev, A. A. Shevyrin, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov. Blockade of tunneling in a suspended single-electron transistor. JETP Lett. 87, 150 –153 (2008).
M. V. Budantsev, A. G. Pogosov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, J. C.Portal. Giant hysteresis of magnetoresistance in the quantum hall effect regime. JETP Lett. 86, 264 –267 (2007).
A. G. Pogosov, M. V. Budantsev, R. A. Lavrov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, J. C. Portal. Coulomb blockade and the thermopower of a suspended quantum dot. JETP Lett. 83, 122 –126 (2006).
S. S. Safonov, S. H. Roshko, A. K. Savchenko, A. G. Pogosov, Z. D. Kvon. “Metallic” and “Insulating” Behavior of the Two-Dimensional Electron Gas on a Vicinal Surface of Si MOSFET’s. Phys. Rev. Lett. 86, 272 – 275 (2001).
A. G. Pogosov, M. V. Budantsev, D. Uzur, A. Nogaret, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov. Thermopower of a multiprobe ballistic conductor, Phys. Rev. B 66, 201303 (2002).
A. G. Pogosov, M. V. Budantsev, O. V. Kibis, A. Poydebasque, D. K. Maude, J. C. Portal. Thermomagnetic effect in a two-dimensional electron system with an asymmetric quantizing potential. Phys. Rev. B 61, 15603 Phys. Rev. B 61, 15603 (2000).
E. M. Baskin, G. M. Gusev, Z. D. Kvon, A. G. Pogosov, M. V. Entin. Stochastic dynamics of 2D electrons in a periodic lattice of antidots. JETP Lett. 55, issue 11, pp. 678 – 682 (1992).