STAFF MEMBERS
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Alexey V. Nenashev Senior Researcher,
Tel: +7 (383) 333-25-19 RSCI Author ID: 36921 RSCI SPIN-code: 3804-1930 ORCID: 0000-0002-1022-0731 Web of Science ResearcherID: S-1809-2018 Scopus Author ID: 7003730532 |
Scientific Activity:
The primary focus of A. V. Nenashev's research is the investigation of heterostructures with quantum dots and transport phenomena in disordered media using computer modeling methods. A. V. Nenashev has developed an analytical method for calculating elastic deformation in quantum dots and their surroundings. Analytical expressions for the deformation tensor as a function of coordinates have been obtained for both points of constant composition and for cases where the composition is a polynomial function of coordinates. A. V. Nenashev has achieved several results in the field of hopping conductivity theory in disordered systems, particularly in organic semiconductors. A parameterization of charge carrier mobility in organic semiconductors as a function of temperature, carrier concentration, and electric field strength has been developed. Numerical methods for determining the charge density distribution in disordered materials have been advanced. A description of mobility in amorphous oxide semiconductors, such as indium gallium zinc oxide (IGZO), as well as in arrays of graphene nanoribbons, has been proposed.
Education:
1999 — Graduated from Novosibirsk State University with a degree in Physics.
2004 — Defended his Candidate of Sciences dissertation titled "Modeling the Electronic Structure of Ge Quantum Dots in Si."
Professional Experience:
- A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk: From 1999 to Present — Engineer, Researcher, Senior Researcher.
Teaching Experience:
- Novosibirsk State University: From 2003 to Present — Assistant, Senior Lecturer, Associate Professor. Currently, in collaboration with Prof. V. L. Alperovich, he delivers a course of lectures titled "Introduction to Semiconductor Physics" at Novosibirsk State University.
Awards and Honors:
Academician A. V. Rzhanov Prize of the Siberian Branch of the Russian Academy of Sciences for a series of works on "Electronic Structure of Ge Quantum Dots in Si" (2002).
Prize from the journal "Nanotechnology" for the best poster at the 11th International Symposium "Nanostructures: Physics and Technology" (2003).
Prize from the Administration of Novosibirsk Oblast for young scientists for outstanding scientific achievements (second-degree diploma in the category "Development or creation of devices, methodologies, technologies, and new scientific and technical products," 2004).
Honorary Certificate for winning the Dmitry Zimin Foundation "Dynasty" competition among young scientists with a degree (2006).
Prize named after the 50th anniversary of the Siberian Branch of the Russian Academy of Sciences and the honorary badge "Golden Sigma" for creating a mathematical model of the electronic structure and elastic deformation fields of quantum dots based on germanium/silicon heterostructures (2007).
Honorary Diploma "Heritage of Siberia" in the category "science and education" for contributions to the development of Siberian science (2007).
Best Presenter Award at the scientific paper competition of the Institute of Semiconductor Physics, SB RAS (2010).
Awards in scientific paper competitions of the Institute of Semiconductor Physics, SB RAS: 2010 (2nd prize), 2013 (3rd prize), 2015 (2nd prize), 2016 (2nd prize).
Selected Publications:
From 2000 to 2024, 111 scientific papers have been published. Among them:
A. V. Nenashev, S. D. Baranovskii, and F. Gebhard. A derivation of E = mc2 without electrodynamics. European Journal of Physics 45, 065603 (2024).
S. D. Baranovskii, A. V. Nenashev, D. Hertel, K. Meerholz, and F. Gebhard. Parametrization of the charge-carrier mobility in organic disordered semiconductors. Physical Review Applied 22, 014019 (2024).
A. V. Nenashev. Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra. Frontiers in Physics 9, 795693 (2022).
B. V. Senkovskiy, A. V. Nenashev, S. K. Alavi, Y. Falke, M. Hell, P. Bampoulis, D. V. Rybkovskiy, D. Yu. Usachov, A. V. Fedorov, A. I. Chernov, F. Gebhard, K. Meerholz, D. Hertel, M. Arita, T. Okuda, K. Miyamoto, K. Shimada, F. R. Fischer, T. Michely, S.i D. Baranovskii, K. Lindfors, T. Szkopek, A. Gruneis. Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions. Nature Communications 12, 2542 (2021).
A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, S. A. Teys, A. V. Dvurechenskii, O. M. Borodavchenko, V. D. Zhivulko and A. V. Mudryi. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge. Scientific Reports 10, 9308 (2020).
A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors. Physical Review B 96, 035204 (2017).
A. V. Nenashev, M. Wiemer, A. V. Dvurechenskii, F. Gebhard, M. Koch and S. D. Baranovskii. Why the apparent order of bimolecular recombination in blend organic solar cells can be larger than two: A topological consideration. Applied Physics Letters 109, 033301 (2016).
A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii. Spin dynamics in SiGe quantum dot lines and ring molecules. Physical Review B 93, 155305 (2016).
A. V. Nenashev. Quantum probabilities from combination of Zurek's envariance and Gleason's theorem. Physica Scripta 2014, 014033 (2014).
A. V. Nenashev, F. Jansson, M. Wiemer, S. Petznick, P. J. Klar, M. Hetterich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii. Scaling approach to hopping magnetoresistivity in dilute magnetic semiconductors. Physical Review B 88, 115210 (2013).