Laboratory of Nonequilibrium Semiconductor Systems

STAFF MEMBERS

Aigul F. Zinovieva

Senior Researcher,
Candidate of Science in Physics and Mathematics,

Tel: +7 (383) 333-26-24
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RSCI Author ID: 39266

RSCI SPIN-code: 3981-0120

ORCID: 0000-0001-5810-7167

Web of Science ResearcherID: S-8775-2018

Scopus Author ID: 6506518556

ResearchGate Profile:Aigul-Zinovieva

Scientific activities:

With the participation of A. F. Zinovyeva, the following scientific results were obtained:

  1. Using the micro-photoluminescence (micro-PL) method, the effects of resonant interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square lattices of Al nanodisks placed on a Si waveguide layer were investigated. GeSi quantum dots were embedded in the waveguide as radiation sources. At optimal parameters of the Al nanodisk lattice, a significant increase in the PL intensity from GeSi QDs was achieved, associated with the realization of bound states in the continuum (BIC). Theoretical studies of the dispersion dependencies of the eigenmodes in the investigated structure showed that flat band effects and slow light can be manifested in the PL spectra of such structures. [ Nanomaterials 13(17), 2422 (2023)].

  2. Using the electron paramagnetic resonance (EPR) method, structures with ring groups of GeSi quantum dots grown on Si(001) substrates with embedded GeSi nanodisks were investigated. The possibility of electron localization in ring groups at the vertices of quantum dots was demonstrated. A narrowing of the EPR line for ring electron states localized on nanodisks was obtained. The EPR line width decreases with the deviation of the magnetic field from the growth direction of the structure, which is an experimental confirmation of the previously predicted effect of increasing the spin relaxation time T2 [ JETP Lett. 113(1), 52 – 56 (2021)].

  3. The photoluminescence (PL) of Ge/Si nanostructures synthesized by ion bombardment with Ge^+ ions (energy 80 keV, flux 10^15 ions/cm^2) on Si(001) substrates was investigated. It was found that under optimal implantation and thermal annealing parameters, GeSi nanoclusters form in the substrate, providing a strong luminescent response at telecommunication wavelengths up to room temperature. PL measurements confirm the advantage of Ge/Si structures synthesized by Ge ion bombardment over conventional epitaxial structures with GeSi quantum dots. Samples implanted with germanium have an almost linear dependence on the power of photoexcitation, indicating quasi-direct optical transitions. The transitions are associated with defect complexes in GeSi nanoclusters, including interstitial Ge atoms [ J. Appl. Phys. 130, 153101 (2021)].

  4. The photoluminescence (PL) of combined Ge/Si structures, which are a combination of large (200-250 nm) disk-shaped quantum dots (nanodisks) of GeSi and four-layer compact groups of smaller (30 nm) quantum dots grown in the deformation field of nanodisks. It was found that by varying the parameters of vertically aligned groups of quantum dots, it is possible to achieve a significant increase in PL intensity. The experimental results were analyzed based on calculations of energy spectra, wave functions of electrons and holes. It was established that the spatial arrangement of quantum dots in compact groups provides efficient localization of electrons in Δx,y-valleys with almost equal probability of finding an electron in the Si layer and in the Ge barrier. As a result, the main channels of radiative recombination in the investigated structures correspond to spatially direct optical transitions [ Scientific Reports 10(1), 9308 (2020)].

  5. The first positive results were obtained for the growth by MBE of silicene on CaF2/Si(111) substrates modified by electron irradiation. Growth conditions were found under which a structure with hexagonal packing forms on the substrate surface. When silicon is deposited on such a substrate, island silicene grows, which was confirmed by Raman spectroscopy and atomic force microscopy studies. [ JETP Lett. 119(9), 703 – 707 (2024)].

Education:

1994 — Graduated from Novosibirsk State University with a degree in Physics.

2008 — Defended her Candidate of Science dissertation “Spin relaxation in arrays of tunnel-coupled dots”.

Professional Experience:

  • A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk: 1994 to present.

Teaching Experience::

  • Development and teaching of the educational course “Semiconductor Element Base of Quantum Informatics”, Department of Quantum Electronics, Physics Department, Novosibirsk State University.

Awards and Honors:

  • Prize of the journal “Nanotechnology” for the best poster at the 11th International Symposium “Nanostructures: Physics and Technology”, 2003.

  • Prize of the Administration of the Novosibirsk Region for young scientists for outstanding scientific achievements (second-degree diploma in the nomination “Development or creation of devices, methods, technologies and new scientific and technical products”), 2004.

Selected publications

From 2000 to 2024, 111 scientific papers were published. Among them:

  1. V. A. Zinovyev, M. V. Stepikhova, Zh. V. Smagina, A. F. Zinovieva, A. A. Bloshkin, E. E. Rodyakina, M. S. Mikhailovskii, M. I. Petrov, A. V. Novikov. Selective excitation of photon modes in silicon microdisk resonator by deterministic positioning of GeSi quantum dots. J. Appl. Phys. 136, 153103 (2024).

  2. A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin, V. I. Muratov, A. V. Dvurechenskii. Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation. JETP Lett. 119(9), 703 – 707 (2024).

  3. V. A. Zinovyev, Zh. V. Smagina, A. F. Zinovieva, E. E. Rodyakina, A. V. Kacyuba, K. N. Astankova, V. A. Volodin, K. V. Baryshnikova, M. I. Petrov, M. S. Mikhailovskii, V. A. Verbus, M. V. Stepikhova, A. V. Novikov. Collective Modes in the Luminescent Response of Si Nanodisk Chains with Embedded GeSi Quantum Dots. Photonics 10(11), 1248 (2023).

  4. V. A. Zinovyev, Zh. V. Smagina, A. F. Zinovieva, A. A. Bloshkin, A. V. Dvurechenskii, E. E. Rodyakina, M. V. Stepikhova, A. V. Peretokin, A. V. Novikov. Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks. Nanomaterials 13(17), 2422 (2023).

  5. A. V. Peretokin, M. V. Stepikhova, A. V. Novikov, S. A. Dyakov, A. F. Zinovieva, Zh. V. Smagina, D. A. Nasimov, E. E. Rodyakina, V. A. Zinovyev. Photonic crystal band structure in luminescence response of samples with Ge/Si quantum dots grown on pit-patterned SOI substrates. Photonics and Nanostructures – Fundamentals and Applications 53, 101093 (2023).

  6. A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, V. A. Volodin, A. Y. Krupin, A. V. Kacyuba, A. V. Dvurechenskii. Radiation-Stimulated Formation of Two-Dimensional Structures Based on Calcium Silicide. Nanomaterials 12, 3623 (2022).

  7. Zh. V. Smagina, V. A. Zinovyev, A. F. Zinovieva, M. V. Stepikhova, A. V. Peretokin, E. E. Rodyakina, S. A. Dyakov, A. V. Novikov, A. V. Dvurechenskii. Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate. Journal of Luminescence 249, 119033 (2022).

  8. V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Y. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii. Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix. JETP Lett. 116(9), 628 – 633 (2022).

  9. V. A. Zinovyev, A. F. Zinovieva, Zh. V. Smagina, A. V. Dvurechenskii, A. K. Gutakovskii, L. I. Fedina, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi. Si-based light-emitters synthesized with Ge ion bombardment. J. Appl. Phys. 130, 153101 (2021).

  10. A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, A. A. Shklyaev, L. V. Kulik, A. V. Dvurechenskii. Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots. JETP Lett. 113(1), 52 – 56 (2021).

  11. V. A. Zinovyev, A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii, A. V. Katsuba, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi. Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence. J. Appl. Phys. 127, 243108 (2020).

  12. A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, S. A. Teys, A. V. Dvurechenskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge. Scientific Reports 10(1), 9308 (2020).