I.G. Neizvestny was born 26.11.1931 in Odessa. 1956 - graduated from the Elecromechanical Faculty of the Moscow Energy Institute on the speciality "Insulators and Semiconductors", then he was absorbed in scientific activities at the Physical Institute USSR AS (engineer-researcher) for the period 1956 - 1962. 1962 - was appointed Deputy Director of the Institute of Solids Physics and Semiconductor Electronics SB RAS, Novosibirsk (since 1964 - ISP SBRAS). 1964 - defended his PhD thesis in "Studying the origin of recombination centres of charge carriers on germanium surface"; 1980 - Doctoral thesis "Studying germanium-insulator interface borders". 1983 - became professor. 1990 - was elected Corresponding member of USSR AS on the department of informatics, computing devices and automation (speciality - "Element base of computing devices").

I.G. Neizvestny is an expert in semiconductor physics and physical bases of semiconductor devices. The sphere of his scientific concern belongs to physical processes on the interface border of semiconductor-insulator, radiation interaction with semiconductor heteropstructures, computer simulation of thin surface layers formation, quantummcryptography, surface-barrier biosensors.

1962 - 1973 and 1980 - 2004 I.G. Neizvestny was Deputy Director for Science, ISP SBRAS. 1973 - 1980 - head "Physics and Technology of germanium MIS Structures". Since 2004 - RAS Councilor, head of the department for "Thin-film structures for micro- and photoelectronics", ISP SBRAS.

I.G. Neizvestny is a member of RAS scientific Council for semiconductor physics, member of the integrated Council for physico-technical sciences SB RAS, Deputy Chief editor of "Microelectronics" magazine, member of editorial boards of journals "Surface, x-ray, synchrotron and neutron investigations", "Physics of low-dimensional structures", "Sensor electronics and microsystem technologies", co-ordinator of the SB RAS program "Fundamental bases of micro- and nanoelectronic solid devices". I.G. Neizvestny is Head of the affiliated chair "Semiconductor Devices and Microelectronics" of the Novosibirsk State technical University. He has been delivering many lectures in physical bases of micro- and nanoelectronics.

I.G. Neizvestny is the author and co-author of 170 scientific contributions including 7 monographs and 4 authorship certificates. Seven Doctoral and 15 PhD theses were defended under his supervision.

In 1995 Igor Georgievich Neizvestny was awarded the title "Laureate of RF State Premium in science and technics for his "Discovery, experimental and theoretical study of a new class of photosensitive semiconductor materials".

1971 - he was awarded the Order of the Red Banner of Labour.