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In 1990 the Institute became the leading institution in the Joint Institute of Semiconductor Physics (JISP) among the Institute of Semiconductor Physics (ISP), SB RAS and the Design Technological Institute of Applied Microelectronics (DTIAM), SB RAS. In 1996 the Institute of Sensor Microelectronics (ISME), SB RAS, Omsk was incorporated into JISP.
For the recent years the Institute of Semiconductor Physics, SB RAS is one of the leading scientific and research centers in Russia specialized in fundamental and applied researches in the fields of Semiconductor physics, Micro- and Nanoelectronics. 13 members of ISP SBRAS were rewarded with USSR State Premiums and State Prize of the Russian Federation.
Nowadays the Institute unites more than 1000 members including 214 scientific staffers: 2 Academician, 4 RAS Corresponding members, 42 Doc. phys.-math. sci. and 131 PhDs in phys.-math. sci. and oth.
The Institute has 3 buildings and has a total area of 35'735 sq. meters. The unique thermostatic building where all semiconductor structures' fabrication and research equipment for micro-, microphoto-. nano- and acoustoelectronics is concentrated.