СОТРУДНИКИ

Наумова Елена Валериевна

вед. инженер

тел. 333-06-99, вн. 1807

e-mail:

Область научных интересов:
искусственные электромагнитные материалы (метаматериалы), электромагнитная киральность, технологии формирования массивов 3D микро- и наноструктур.

Образование:
В 1993 г. окончила с отличием физический факультет Саратовского Государственного Университета (каф. электроники, теории колебаний и волновых процессов), в 1992 г. с отличием - отделение инженеров-переводчиков Саратовского Государственного Университета (англ.яз.), в 1999 г.- очную аспирантуру Саратовского Государственного Технического Университета.

Научная деятельность:
С 1995 по 2000 год участвовала в разработке новой нанотехнологии, основанной на лазерном управлении и структурировании пучков нейтральных атомов, является соавтором патента. С октября 2004 г. по настоящее время работает ведущим инженером лаборатории физики и технологии трёхмерных наноструктур Института физики полупроводников СО РАН и занимается созданием новых искусственных электромагнитных материалов (метаматериалов) на основе трехмерных оболочек, в основном метаматериалов с киральными свойствами.

Избранные научные публикации:

Является соавтором 32 научных публикаций, 9 приглашенных докладов.

Две публикации по киральным метаматериалам заняли первое место по прикладному направлению на конкурсе научных работ ИФП 2009 года:

1. Наумова Е.В., Принц В.Я., Структура с киральными электромагнитными свойствами и способ ее изготовления, Патент на изобретение № 2317942 опубл. 27.02.08 в БИ № 6.
2. Naumova E.V., Prinz V.Ya., Golod S.V., Seleznev V.A., Soots R.A., Kubarev V.V., Manufacturing chiral electromagnetic metamaterials by directional rolling of strained heterofilms. Journal of Optics A: Pure And Applied Optics, Vol. 11 (7), 074010 (5pp), 2009

СОТРУДНИКИ

Небогатикова Надежда Александровна

Младший научный сотрудник

тел. 333-06-99

503 ЛТК

e-mail:

Образование:
2004 г. – поступление на физический факультет Новосибирского государственного университета по специальности "физика", бакалавратура.
2008 г., 2010 – Защита на «отлично» дипломов бакалавра и магистра.
2013 г. – Окончание аспирантуры Новосибирского государственного университета с представлением кандидатской диссертации на ученом совете ИФП СО РАН (специальность «физика конденсированного состояния вещества»).
Научный руководитель – д-р физ.-мат. наук, в.н.с. ИФП СО РАН Антонова И.В.
2015 г. – защита кандидатской диссертации «Материалы и наноразмерные гетероструктуры на основе графена и фторографена» (специальность «физика конденсированного состояния вещества», 01.04.07).
Научный руководитель – д-р физ.-мат. наук, в.н.с. ИФП СО РАН Антонова И.В.

Трудовая деятельность:
2007-2010 г. – стажер-исследователь в Институте неорганической химии А.В. Николаева СО РАН.
2008-2011 г. – инженер отдела НИРС в Новосибирском государственном университете.
2010-по н/вр. – сотрудник лаборатории физики и технологии трехмерных наноструктур Института физики полупроводников им. А.В. Ржанова СО РАН.

Научная деятельность:
Научные интересы Н.А. Небогатиковой связаны с изучением процессов фторирования таких графеновых материалов, как пленки графена и мультиграфена, а также графеновые суспензии. В результате фторирования пленок графена и мультиграфена были созданы массивы квантовых точек графена в изолирующей диэлектрической матрице, планируется создание приборов на их основе. Цель этих исследований – изучение механизмов и закономерностей для химической функционализации графена с возможностью их дальнейшего использования для практического применения в наноэлектронике, устройствах энергонезависимой памяти с квантовыми точками и др.

Найден оригинальный, простой и технологичный способ фторирования графена и формирования квантовых точек графена в изолирующей матрице фторографена. Исследована электронная структура самоформирующихся массивов квантовых точек и зависимости этих параметров от условий их формирования. Проведены первые измерения методом зарядовой спектроскопии (Q-DLTS) на слоях с квантовыми точками графена и определена система уровней для квантовых точек разной толщины от монослоя до 3 нм. Обнаружено, что меняя толщину квантовых точек можно на несколько порядков (до 4 порядков) менять время релаксации неравновесного заряда с квантовых точек. Такое уникальное свойство полученных точек (представляющее интерес для элементов энергонезависимой памяти) предположительно связано с формой барьеров фторированной части пленки. Исследования спектров фотолюминесценции для суспензии или пленок с квантовыми точками показали, что данные Q-DLTS прекрасно коррелируют с оптическими измерениями.

С 2016 года Небогатиковой Н.А. ведутся работы по исследованию процессов структурирования пленок графена и мультиграфена путем их облучения ионами высоких энергий с целью открытия в энергетическом спектре графеновых слоев запрещенной зоны. Помимо исследования графена Небогатикова Н.А. принимает активное участие в исследовании других перспективных двумерных материалов, таких как MoS₂, Mo₂S₃, VS₄.

Педагогическая деятельность:

• Преподаватель физики в ЛШ СУНЦ НГУ в 2009, 2010, 2011, 2012 гг.
• Преподаватель физики на кафедре физики СУНЦ НГУ с 2011 по 2013 гг.

Премии и награды:

• Стипендия ИФП СО РАН в 2013 г.
• 3-е место в конкурсе научных работ ИФП СО РАН в 2014 г.
• Звание «лучший молодой докладчик» в конкурсе научных работ ИФП СО РАН в 2014 г.

Избранные публикации:

1. N.A. Nebogatikova, I.V. Antonova, V.A. Volodin, V.Ya. Prinz. Functionalization of graphene and few-layer graphene with aqueous solution of hydrofluoric acid, Physica E, 52, 106-111, 2013. DOI 10.1134/S1995078014010108 скачать
2. Н.А. Небогатикова, И.В. Антонова, В.А. Володин, В.Я. Принц, Д.А. Зацепин, Э.З. Курмаев, И.С. Жидков, С.О. Чолах. Функционализация пленок графена и мультиграфена в водном растворе плавиковой кислоты, Российские нанотехнологии, 2014, т. 9, №1-2, стр. 59-65. = N.A. Nebogatikova, I.V. Antonova, V.Ya. Prinz, V.A. Volodin, D.A. Zatsepin, E.Z. Kurmaev, I.S. Zhidkov, S.O. Cholakh, Functionalization of Graphene and Few-Layer Graphene Films in an Hydrofluoric Acid Aqueous Solution, Nanotechnologies in Russia, 2014, Vol. 9, № 1–2, pp. 51–59. DOI: 10.1134/S1995078014010108 скачать на русском языке скачать на английском языке
3. Н.А. Небогатикова, И.В. Антонова, А.И. Комонов, В.Я. Принц. Создание массивов квантовых точек графена и мультиграфена в матрице фторографена, Автометрия, 2014, Т. 50 №3, стр. 101-107. DOI: 10.3103/S8756699014030145. Nebogatikova, N. A., Antonova, I. V., Komonov, A. I., & Prinz, V. Y. (2014). Producing arrays of graphene and few-layer graphene quantum dots in a fluorographene matrix. Optoelectronics, Instrumentation and Data Processing, 50(3), 298-303. скачать
4. I.V. Antonova, N.A. Nebogatikova, V.Ya. Prinz. Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: charge transient spectroscopy, Appl. Phys. Lett. 104, 193108 (2014). DOI 10.1063/1.4878262 скачать
5. N.A. Nebogatikova, I.V. Antonova, V.Ya. Prinz, V.B. Timofeev and S.A. Smagulova. Graphene quantum dots in fluorographene matrix formed by means of chemical functionalization, Carbon, 2014, V 77 (1095-1103). DOI 10.1016/j.carbon.2014.06.026 скачать
6. I. V. Antonova, N. A. Nebogatikova, V. Ya. Prinz, V. I. Popov, S. A. Smagulova. Light-assisted recharging of graphene quantum dots in fluorographene matrix, Journal of Applied Physics 116, 134310 (2014); doi: 10.1063/1.4897231 .
7. M.N. Kozlova, Yu. V. Mironov, E.D. Grayfer, A.I. Smoletsev, V.I. Zaikovskii, N.A. Nebogatikova, T.Yu. Podlipskaya, V.E. Fedorov. Synthesis, Crystal Structure and Colloidal Dispersions of Vanadium Tetrasulfide VS4. Chemistry - A European Journal, Volume 21, Issue 12, pages 4639–4645, March 16, 2015. DOI 10.1002/chem.201406428
8. N.A. Nebogatikova, I.V. Antonova, V.Ya. Prinz, I.I. Kurkina, G.N. Aleksandrov, V.B. Timofeev, S.A. Smagulova, E.R. Zakirov, V.G. Kesler. Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties. DOI: 10.1039/C4CP04646C. Physical Chemistry Chemical Physics, 2015, 17, 13257 - 13266
9. И.В. Антонова, И.А.Котин, Н.А.Небогатикова, В.Я. Принц, «Самоформирующиеся латеральные гетероструктуры на основе графена с возможностью модуляции тока на 4-5 порядков», Письма в Журнал технической физики, 2015, том 41, выпуск 19, стр. 64-72.
10. I.V. Antonova, N.A. Nebogatikova, V.Ya. Prinz, Chemical functionalization as an approach for the creation of arrays of graphene quantum dots embedded in dielectric matrix, book "Chemical Functionalization of Carbon Nanomaterials: Chemistry and Applications". section: Chemical Functionalization of Carbon Nanomaterials: Structure and Synthesis. CRC Press, Taylor & Francis Group, ISBN 9781482253948, 976 Pages, Eds V.K.Thakur, M.K. Thakur, pp 430-453, 2015.
11. Графеновые суспензии для 2D печати, Р.А. Соотс, Е.А. Якимчук, Н.А. Небогатикова, И.А. Котин, И.В. Антонова, «Письма в Журнал технической физики». Год 2016, том 42, выпуск 8, стр. 102 - 110.
12. Resistive switching effect and traps in partially fluorinated graphene films, Kurkina, Irina; Antonova, Irina; Nebogatikova, Nadezhda; Kapitonov, Albert; Smagulova, Svetlana. Journal of Physics D: Applied Physics. 2016, 49, 095303. DOI 10.1088/0022-3727/49/9/095303
13. I. V. Antonova, N. A. Nebogatikova, and V. Ya. Prinz. Fluorinated graphene films with graphene quantum dots for electronic applications, Journal of Applied Physics, 119, 224302 (2016); doi: 10.1063/1.4953239.
14. Nebogatikova, N. A., Antonova, I. V., Kurkina, I. I., Soots, R. A., Vdovin, V. I., Timofeev, V. B., Smagulova, S. A., Prinz, V. Ya. (2016). Fluorinated graphene suspension for inkjet printed technologies. Nanotechnology, 27(20), 205601. DOI 10.1088/0957-4484/27/20/205601
15. Antonova I.V., Kurkina I.I., Nebogatikova N.A., Komonov A.I., Smagulova S.A. Films fabricated from partially fluorinated graphene suspension: structural, electronic properties and negative differential resistance. 2016, Nanotechnology, 28(7), 074001, DOI
16. Antonova Irina V, Nebogatikova Nadezhda A. Chapter "Fluorinated graphene dielectric and functional layers for electronic applications" in the book "Graphene Materials - Advanced Applications". Book edited by George Z. Kyzas and Athanasios Ch. Mitropoulos, ISBN 978-953-51-3142-7, Print ISBN 978-953-51-3141-0, Published: May 17, 2017 under CC BY 3.0 license ссылка
17. DFT study and experimental evidence for the sonication induced cleavage of molybdenum sulfide Mo2S3 in liquids. Mariia Kozlova, Andrey Enyashin, Ekaterina Grayfer, Vitalii A. Kuznetsov, Pavel Pluysnin, Nadezhda Aleksandrovna Nebogatikova, Vladimir I. Zaikovskii and Vladimir E. Fedorov. Journal of Materials Chemistry C, DOI 10.1039/C7TC01320E, IF 5.006.
18. Козлова М.Н.1, Артемкина С.Б. 1,2, Подлипская Т.Ю.1, Das M.R3, Федоров В.Е.1,2. Коллоидные дисперсии дисульфида молибдена с узким мономодальным распределением частиц по размерам, Известия АН. Серия химическая, номер 6, 2017. M. N. Kozlova, S. B. Artemkina, T. Yu. Podlipskaya, N. A. Nebogatikova, M. R. Das, and V. E. Fedorov Colloidal dispersions of molybdenum disulfide with a narrow particle size distribution Russian Chemical Bulletin, International Edition, Vol. 66, No. 6, pp. 963—968, 2017
19. N.A. Nebogatikova, P.V. Fedotov, V.I. Vdovin, A.I. Komonov, I.V. Antonova, and E.D. Obraztsova, Optical and electronic properties of the partially fluorinated graphene suspensions and films, Journal of material science. IF 2.3
20. Иванов А.И., Небогатикова Н.А., Куркина И.И., Антонова И.В. Механизм резистивных переключений в плeнках на основе частично фторированного графенаФизика и техника полупроводников, 2017, выпуск 10, стр. 1357. DOI: 10.21883/0000000000. IF 0.8.
21. Ivanov A.I., Nebogatikova N.A., Kotin I.A., Antonova I.V. Two-layer and composite films based on oxidized and fluorinated graphene, Physical Chemistry Chemical Physics, 2017, DOI: 10.1039/C7CP03609D IF 4.123

СОТРУДНИКИ

Комонов Александр Иванович

инженер

тел. 333-06-99

504 ЛТК

e-mail:

Образование:
2010 - Новосибирский государственный технический университет, факультет радиотехники и электроники

Опыт работы:
2007 - по настоящее время — инженер ИФП СО РАН

Область научных интересов:
Сканирующая туннельная микроскопия, атомно-силовая микроскопия, локальное зондовое окисление, графен, наноматериалы, трёхмерные наноструктуры.

Избранные публикации:

Монографии, главы монографий, обзоры:

1. E.B. Grokhov, K.A. Astankova, A.I. Komonov, A. I. Kuznetsov, GeO2 Films with Ge-Nanoclusters in Layered Compositions: Structural Modifications with Laser Pulses, Laser Pulses - Theory, Technology, and Applications, Igor Peshko (Ed.), InTech, 2012

Статьи

1. S.B. Artemkina, T.Y. Podlipskaya, A.I. Bulavchenko, A.I. Komonov, Y.V. Mironov, V.E. Fedorov, Preparation and characterization of colloidal dispersions of layered niobium chalcogenides, Colloids and Surfaces A Physicochemical and Engineering Aspects, v.461, pp. 30–39,2014
2. V.E. Fedorov, S.B. Artemkina, E.D. Grayfer, N.G. Naumov, Y.V. Mironov, A.I. Bulavchenko, V.I. Zaikovskii, I.V. Antonova, A.I. Komonov, M.V. Medvedev, Colloidal solutions of niobium trisulfide and niobium triselenide, J. Mater. Chem. C, v.2, №28, 5479-5486, 2014
3. I. V. Antonova, S. V. Golod, R. A. Soots, A. I. Komonov, V. A. Seleznev, M. A. Sergeev, V. A. Volodin, V. Ya. Prinz, Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate, Semiconductors, v.48, № 6, pp. 804-808, 2014
4. N.A. Nebogatikova, I.V.Antonova, A.I.Komonov, V.Ya.Prinz, Producing arrays of graphene and few-layer graphene quantum dots in a fluorographene matrix, Optoelectronics instrumentation and data processing, v. 50, №3, pp. 298-303, 2014
5. I.A.Kotin, I.V.Antonova, A.I.Komonov, V.A.Seleznev, R.A.Soots, V.Ya.Prinz, High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate, Journal of Physics D: Applied Physics, v.46, №28, p.285303, 2013

STAFF MEMBERS

Irina V. Antonova

e-mail:

Date of Birth: 26.06.1957

Education:
1979, Department of Physics and Engineering, Novosibirsk Institute of Electrical Engineering.
1990, Candidate of Sciences (Ph. D.) in Semiconductor Physics. Thesis "Investigation of inhomogeneous distribution of the defects and impurities in silicon"
2009, Doctor of Sciences in Semiconductor physics. Thesis “Localized states in Si-based hetero- systems formed in deformation fields”

Work Experience:
1979-1981 – the researcher, Institute of physics and chemistry of mineral materials, Novosibirsk.
1981-1985 – the post-graduate student in Institute of Semiconductor Physics, Novosibirsk;
1985-2004 – the scientific researcher, senior researcher, a leading researcher in the laboratory of radiation physics of semiconductors, Institute of Semiconductor Physics, Novosibirsk.
2004-present – the leading researcher in the laboratory of three-dimensional nanostructures, Institute of Semiconductor Physics, Novosibirsk.

Current Research and Professional Interests:
Graphene-based heterostructures, chemical functionalization of graphene and fabrication of graphene-based hybrid structures, transport and recharging phenomena in nanocomposite layers (such as Si nanocrystals in dielectric matrix), and localized states in heterostructures (silicon-on-insulator, Si/SiGe/Si with quantum wells and quantum dots), high-pressure-related effects in semiconductors and heterostructures, quantum confinement levels in quantum wells and quantum dots, and surface passivation phenomena in semiconductors covered with organic monolayers. I.V. Antonova heads a group of researchers dedicated to the investigation of graphene-based heterostructures.
Presently, Prof. Dr. I.V. Antonova has more than 340 papers published in leading, high-cited scientific journals and conference proceedings. Sum of the times cited is about 1600, h-index is equal to 17 (WoS).- 18 (Scopus) - 22 (e-library).

The main results (2017-2021)
IV Antonova deals with the development of new materials based on graphene with a wide range of electronic properties, namely, with the creation and study of graphene and few-layer-graphene for gas sensors, humidity sensors, transistors, vertical heterostructures created using chemically functionalized graphene and 2D printing technology.

1. An original technology was developed and thin-film hybrid structures were created using the covalent functionalization of graphene with an organic solvent N-methylpyrrolidone (NMP) (films consisting of one or more graphene layers or a suspension. As a result, the possibility of obtaining 2D dielectric films with a high dielectric constant (~ 8-9) ultralow charge in the film (~ 1e10 cm-2), low leakage currents, which makes it promising for optoelectronic applications. It should be noted that the restoration of the conductivity of the upper layer opens up new interesting possibilities for three-dimensional design, namely, for imparting substantially different properties to different monolayers in a single structure.
2. New technology for creating fluorographene has been proposed and implemented (simple and cheap technology, several patents have been obtained) by processing graphene or multigraphene up to several nanometers thick (films or suspension) in an aqueous solution of hydrofluoric acid. An abrupt transition from a high conductivity of the layer to a non-conductive state was found during processing for several minutes. It was found that, at a graphene fluorination degree of ~ 20-25%, it leads to the formation of arrays of graphene or multigraphene quantum dots in the fluorographene matrix. Unique investigations of the band structure of QDs by charge spectroscopy have been carried out. The system of QD levels of graphene and its dependence on the film thickness and degree of fluorination have been determined. The possibility of controlling the emission time of QD carriers by varying the initial thickness of the graphene film subjected to fluorination was found. It has been shown that dielectric films made of fluorinated graphene have an ultra-low charge in the film or heterointerface, low leakage current, and stability up to 450 ° C, which makes them promising for use as dielectric layers in van der Waals heterostructures. The possibility was shown and the conditions for fluorination of the graphene suspension were clarified. Due to the possibility of obtaining fine particles of fluorographene, films formed from a suspension of FGs have a surface relief of ~ 2 nm and, at a fluorination degree of more than 30%, they have dielectric properties and low leakage currents.
3. Recently, the group of IV Antonova. has been developing graphene-based and functional graphene inks for 2D printing technologies. A suspension of graphene, fluorographene, V2O5, h-BN nanoparticles, and composite particles have been successfully used in 2D printing technologies to create conductive, dielectric, and functional layers, as well as memristors, sensors, and transistors.
4. Fluorographene has been used to develop composite materials for memristors. We have printed and investigated test elements that use a stable switching resistance with an on-to-off current ratio of up to 8-9 orders of magnitude. As an active element, we used a composite of fluorinated graphene and V2O5 nanoparticles. Resistive switching up to 4-6 orders of magnitude was found for a two-layer memristive structure of fluorographene on a polyvinyl alcohol film. It was determined that in both cases the switching time is ~ 30 ns, and ensures stability during pulse switching at least up to 2e6 times.
5. Two-layer structures of fluorinated graphene film on graphene oxide were created by 2D printing. The technology for producing graphene oxide is well developed (modified Hammers method), however, the problem of using graphene oxide as a dielectric is the instability of its properties and high leakage currents. We have shown that both problems can be solved by applying a thin layer of fluorinated graphene to the GO using printing technologies. In addition, we have created hybrid transistor heterostructures, in which dielectric layers were created by printing from fluorinated graphene, and the channel - by transferring CVD graphene or multigraphene. As a result, an increase in the mobility in the channel was observed by a factor of 4-5, which is promising for applications.
6. Work was carried out to study the flexibility of various structures of graphene, fluorinated graphene, and composite graphene layers with PEDOT: PSS (polymer with the highest conductivity) under tensile or compressive deformations. In particular, using printing technologies, resistive moisture sensors were created from a graphene composite with PEDOT: PSS, and it was shown that the functional properties of the sensors do not change when they are stretched as a result of up to a bending radius of 3 mm (deformation ~ 2%). For humidity sensors based on CVD graphene, the types of defects leading to different signs of the sensor response were determined, which is important for optimizing the response of structures. For memristor structures made of fluorinated graphene on a film of polyvinyl alcohol, it was shown that a decrease in the ratio of currents in the open and closed states from 8-9 orders of magnitude to 2 orders occurred at tensile deformations of about 7%; after the removal of deformations, the parameters of the structures were completely restored to their initial values.
7. The possibility of nanostructuring multigraphene with high-energy ions (Xe with energies of 20-250 MeV) with the formation of pores with a size of 20-60 nm has been shown. It was found that starting from certain values of ion energies (70 MeV), the mobility of carriers in the structured material slightly decreases in comparison with the initial one, whereas when irradiated with ions of lower energy, the mobility decreases by 2–3 orders of magnitude. Taking into account the decrease in the number of defects tested by the Raman scattering method, the effect was explained by the closure of bonds at the edges of the pores vertically between layers, which opens up prospects for nanostructuring of few-layer graphene without degradation of its electrical properties.
8. A method was found for the synthesis of composite nanoparticles based on hexagonal boron nitride h-BN and graphene G, and the morphological and electrical parameters of films from composites of various compositions were investigated. The starting materials were synthesized in plasma and their structural quality was confirmed. By varying the composite content, it is possible to obtain films that differ in both morphological and electrical parameters. In particular, at a certain composition, G particles were detected, differently decorated with h-BN particles, which leads to the emergence of a multi-barrier system and its manifestation in electrical characteristics. With compositions, h-BN: G = 1: (4-10), nonlinear current-voltage characteristics with a hysteresis of up to 4 orders of magnitude and bandgap 18 – 27 meV are observed.

Professional Activities & Affiliations
Member of the International Association of Advanced Materials (IAAM).
Award of JAAM : medal of 2016 for notable and outstanding research in advanced materials science and technology.
Lectures I.V. Antonova has lectured for students of the Novosibirsk State Technical University “Micro-and Nanosystems in technology (Graphene and 2D materials)”

Selected Publications:

Books

1. I.V.Antonova, N.A.Nebogatikova, chapter 11 Fluorinated graphene dielectric and functional layers for electronic applications, in «Graphene Materials - Advanced Applications», book edited by G. Z. Kyzas and A.Ch. Mitropoulos, ISBN 978-953-51-3142-7, Print ISBN 978-953-51-3141-0, Published: May 17, 2017, INTECH. pp. 211-230
2. I.V.Antonova, V.Ya.Prinz, Benefits of few-layer graphene for applications Chapter 30 in Handbook of Graphene Science: Vol. 2, Nanostructure and Atomic Arrangement, Taylor and Francis Books - CRC press, 6 томов – 2768 стр, ISBN-13: 978-1466591189, pp 475 - 492, 2016.
3. I.V. Antonova, N.A. Nebogatikova, V.Ya. Prinz, Chemical functionalization as an approach for the creation of arrays of graphene quantum dots embedded in a dielectric matrix, the book "Chemical Functionalization of Carbon Nanomaterials: Chemistry and Applications". CRC Press, Taylor & Francis Group, ISBN 9781482253948, 976 Pages, Eds V.K.Thakur, M.K. Thakur, pp 430-453 2015.
4. I.V. Antonova, Si nanocrystal arrays created in the SiO2 matrix by high-energy ion bombardment, chapter 8 in book Ion Implantation, ISBN 978-953-308-3-1, pp. 153-182, 2012.
5. I.V. Antonova, Electrical Properties of Semi-Conductor Nanocrystals and Quantum Dots in Dielectric Matrix, in “Nanocrystals and Quantum Dots of Group IV Semiconductors”, ed. T.V.Torchynska and Yu.V.Vorobiev, American Scientific Publisher, Chapter 4, 151 -189, 2010

Reviews

1. I.V. Antonova Straintronics 2D inorganic materials for electronic and optical applications, Physics–Uspekhi, 2022, 65 https://doi.org/10.3367/UFNr.2021.05.038984
2. I.V. Antonova, 2D printing technologies using graphene based materials ”Physics Uspechi, 60 (2) 204 – 218, 2017.
3. I.V. Antonova, Non-Organic Dielectric Layers for Graphene and Flexible Electronics, International Journal of Nanomaterials, Nanotechnology and Nanomedicine, 2(1) 0.18-0.24, 2016
4. I.V. Antonova Vertical heterostructures used graphene and other monolayer materials Semiconductors 50(1):66-82, 2016
5. I.V.Antonova, Chemical vapor deposition growth of graphene on a copper substrate: current trends Physics - Uspechi, 56 (10), 1013-1020, 2013.

Articles

2022

1. N.P.Stepinaa, V.A.Golyashova, A.V.Nenasheva, O.E.Tereshchenkoa, K.A.Kokhc, V.V.Kirienkoa, E.S.Kopteva,b, M.G.Rybind, E.D.Obraztsovad and I.V.Antonovaa, Weak antilocalization to weak localization transitionin Bi2Se3 films on graphene, Physica E: Low-dimensional Systems and Nanostructure, 135, 114969, 2022

2021

1. A.I. Ivanov, V.Ya. Prinz, I.V. Antonova, A.K. Gutakovskii Resistive switchings on individual V2O5 nanoparticles encapsulated in fluorinated graphene films. Phys. Chem. Chem. Phys. 2021, 23, 20434.
2. Shojaei, S., Antonova, I.V., Yakimchuk, E, Esfahlan, S. M. S. Robust electrical current modulation in functionalized graphene channels, J. Mater. Sci. Mater. in Electron. 32(2) 2021, 1641-1649
3. I.V. Antonova, M. B. Shavelkina, D.A. Poteryaev, N.A. Nebogatikova, A.I. Ivanov, R.A. Soots, A.K. Gutakovskii, I.I. Kurkina, V.A. Volodin, V.A. Katarzhis, P.P. Ivanov, A.N. Bocharov, Graphene / hexagonal boron nitride composite nanoparticles for 2D printing technologies, Advanced Engineering Materials, doi.org/10.1002/adem.202100917
4. Nikolaev, D.V.; Evseev, Z.I.; Smagulova, S.A.; Antonova, I.V. Electrical Properties of Textiles Treated with Graphene Oxide Suspension. Materials 2021, 14, 1999
5. I.V. Antonova, N.A. Nebogatikova, N.P.Stepina, V.A.Volodin, V.V. Kirienko, M.G.Rybin, E.D.Obrazstova, V.A. Golyashov, K.A. Kokh, O.E. Tereshchenko Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility J Mater Sci (2021) 56: 9330–9343

2020

1. I.V Antonova, N A Nebogatikova, K A Kokh, D A Kustov, R A Soots, V A Golyashov, O E Tereshchenko, Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene, Nanotechnology, 31, 125602(7), 2020
2. A.Paddubskaya, D.Rutkauskas, R.Karpicz, G.Dovbeshko, N. Nebogatikova, I. Antonova, A. Dementjev, Recognition of Spatial Distribution of CNT and Graphene in Hybrid Structure by Mapping with Coherent Anti-Stokes Raman Microscopy, Nanoscale Research Letters (2020), 15, 37(7).
3. I. Antonova, N. Nebogatikova, N. Zerrouki, I. Kurkina, A. Ivanov, Flexibility of Fluorinated Graphene‐Based Materials, Materials 2020, 13, 1032
4. Irina V. Antonova, Marina B. Shavelkina , Artem I. Ivanov, Regina A. Soots, Peter P. Ivanov and Alexey N. Bocharov, Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis, Nanomaterials 2020, 10, 2050
5. N.A. Nebogatikova, I.V. Antonova, V.A. Demin, D.G. Kvashnin, A. Olejniczak, E.A. Korneeva, P.L.J. Renault, A.V. Skuratov, L.A.Chernozatonskii, Strong structural and electric changes in fluorinated graphene films under high-energy ions irradiation, Nanotechnology, 319(29), 295602, 2020
6. S.A. Smagulova, P.V. Vinokurov, A.A. Semenova, E.I. Zakharkina, F.D. Vasilieva, E. D. Obraztsova, P.V. Fedotov, I.V. Antonova, Investigation of the properties of two-dimensional MoS2 and WS2 films synthesized by the CVD method, Semiconductor, 54(4), 454-464, 2020
7. K.A. Kokh, N.A. Nebogatikova, I.V. Antonova, D.A. Kustov, V.A. Golyashov, E.S. Goldyreva, N.P. Stepina, V.V. Kirienko, O.E. Tereshchenko, Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica, Materials Research Bulletin, 129, 2020, 110906

2019

1. Olejniczak, N.A. Nebogatikova, A.V. Frolov, M. Kulik, I.V. Antonova, V.A. Skuratov. Swift heavy-ion irradiation of graphene oxide: localized reduction and formation of sp-hybridized carbon chains. Carbon, 141, (2019) 390-399
2. I.V. Antonova, I.I. Kurkina, A.K. Gutakovskii, I.A. Kotin, A.I. Ivanov, N.A. Nebogatikova, R.A. Soots, S.A. Smagulova Fluorinated graphene suspension for flexible and printed electronics: flakes, films, and heterostructures, Materials & Design, 164, 107526, 2019
3. A.I. Ivanov, N.A. Nebogatikova, I.A. Kotin, I.V. Antonova, S.A. Smagulova Threshold Resistive Switching Effect in Fluorinated Graphene Films with Graphene Quantum Dots Enhanced by Polyvinyl Alcohol, Nanotechnology 30, 255701, 2019
4. E. Yakimchuk, V. Volodin, I. Antonova, New graphene derivative with N-methylpirrolidone: suspension, structural, optical and electrical properties, Phys. Chem. Chem. Phys., 21, 12494, 2019
5. A.I. Ivanov, A.K. Gutakovskii, I.A. Kotin, R.A. Soots, I.V. Antonova, Resistive Switching Effect with ON/OFF current relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles, Advanced Electronic Materials, 2019, 5(10), 1900310
6. V.I. Popov, I.A. Kotin, N.A. Nebogatikova, S.A. Smagulova, I.V. Antonova Graphene–PEDOT: PSS humidity sensors for high sensitive, low-cost, highly-reliable flexible and printed electronics, Materials, 2019, 12, 3477

2018

1. G. Cherevko, Y.V. Morgachev, I. A. Kotin, E.A. Yakimchuk, R.A. Soots, I.V. Antonova, Graphene antenna on a biodegradable substrate for GSM frequency range of cellular operators, 2018 14th International scientific - technical conference on actual problems of electronic instrument engineering (APEIE) – 44894 proceedings, p 312 – 314, 978-1-5386-7054-5/18/$31.00 ©2018 IEEE
2. N.A. Nebogatikova, I.V. Antonova, S.V. Erohin, D.G. Kvashnin, A. Olejniczak, V.A. Volodin, A.V. Skuratov, A.V. Krasheninnikov, P.B. Sorokin, L.A. Chernozatonksii, Nanostructured few-layer graphene films with interlayer edge reconstructions for electronic applications, Nanoscale, 2018, 10, 14499-14509.
3. E. Yakimchuk, R. Soots, I. Antonova, Stability of graphene suspensions in an aqueous based multi-component medium, Advanced Material Letters, 2018, 9(3), 211-215.
4. F.D. Vasilieva, A.N. Kapitonov, E.A. Yakimchuk, I.A. Kotin, S.A.Smagulova, I.V. Antonova, Mildly oxidized graphene oxide suspension for printed technologies, Mater. Res. Express, 5 065608, 2018

2017-2007

1. I.V. Antonova, I.I. Kurkina, N.A. Nebogatikova, A.I. Komonov, S.A. Smagulova, Films fabricated from partially fluorinated graphene suspension: structural, electronic properties and negative differential resistance, Nanotechnology, 27, 074001(10), 2017.
2. V.I. Popov, D.V. Nikolaev, V.B. Timofeev, S.A. Smagulova, I.V. Antonova Graphene Based Humidity Sensors: The Origin of Alternating Resistance Change, Nanotechnology 28 (2017) 355501
3. A.I. Ivanov, N.A.Nebogatikova, I.A.Kotin, I.V.Antonova Two-layer and composite films based on oxidized and fluorinated graphene Phys. Chem. Chem. Phys. 19, 19010 – 19020, 2017
4. N.A. Nebogatikova, I.V. Antonova, I.I. Kurkina, R.A. Soots, V.I. Vdovin, V.B Timofeev, S.A.Smagulova, V.Ya Prinz Graphene flakes fragmentation in suspension in the course of fluorination, Nanotechnology, 27 205601, 2016
5. N.A. Nebogatikova, I.V. Antonova, V.Ya. Prinz, I.I. Kurkina, G.N. Aleksandrov, V.B. Timofeev, S.A.Smagulova, E.R. Zakirov, V.G. Kesler, Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties, Physical Chemistry Chemical Physics, 2015, 17, 13257 - 13266
6. N.A. Nebogatikova, I.V. Antonova, V.Ya. Prinz, V.B. Timofeev, S.A. Smagulova, Graphene quantum dots in fluorographene matrix formed by means of chemical functionalization, Carbon, 77, 1095-1103, 2014.
7. I.V. Antonova, N.A. Nebogatikova, V.Ya. Prinz, Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: formation of quantum dots and charge spectroscopy, Appl. Phys. Lett. 104 (19), 193108(5), 2014.
8. N A Nebogatikova, I V Antonova, V A Volodin, V Ya Prinz, Functionalization of graphene and few-layer graphene with an aqueous solution of hydrofluoric acid, Physica E, 52, 106-111, 2013.
9. I.V.Antonova, I.A.Kotin, R.A.Soots, V.A.Volodin, V.Ya.Prinz Tunable Properties of Few-Layer Graphene - N-methylpyrrolidone Hybrid Structures Nanotechnology, 23, 315601, 2012.
10. I.V Antonova, S.V. Mutilin, V.A. Seleznev, R.A. Soots, V.A.Volodin, V.A. Prinz, Extremely High Response of Electrostatically Exfoliated Few-Layer Graphene to Ammonia Adsorption, Nanotechnology, 22, 285502, 2011.
11. I.V. Antonova, A.G. Cherkov, V.A. Skuratov, M.S. Kagan, J. Jedrzejewski, I. Balberg, Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation, Nanotechnology, 20, 185401, 2009.
12. I.V. Antonova, E.P. Neustroev, S.A. Smagulova, M.S. Kagan, P. S. Alekseev, S.K. Ray, N. Sustersic, J. Kolodzey, Deep Level Spectroscopy studies of confinement levels in SiGe quantum wells, J. Appl. Phys., 106, 084903, 2009.
13. I.V. Antonova , M.B. Gulyaev, E. Savir, J. Jedrzejewski I. Balberg Charge storage, photoluminescence and cluster statistics in ensembles of Si quantum dots, Phys. Rev.B, 77, 125318, 2008.
14. I.V. Antonova, R.A. Soots, M.B.Guliaev, V.Ya.Prinz, Miron S. Kagan, J. Kolodzey, Electrical passivation of Si/SiGe/Si structures by 1-octadecene monolayers, Appl. Phys. Let., 91, 102116, 2007.