Новиков Алексей Витальевич, к.ф.-м.н., доктор физико-математических наук, директор, заведующий лабораторией молекулярно-пучковой эпитаксии полупроводниковых гетероструктур отдела физики полупроводников
Институт физики микроструктур РАН – филиал Федерального государственного бюджетного научного учреждения «Федеральный исследовательский центр Институт прикладной физики Российской академии наук», Web-сайт: www.ipmras.ru , отзыв

Список публикаций по теме диссертации соискателя за последние 5 лет:

1. D.N. Lobanov, K.E. Kudryavtsev, M.I. Kalinnikov, L.V. Krasilnikova, P.A. Yunin, E.V. Skorokhodov, M.V. Shaleev, A.V. Novikov, B.A. Andreev, Z.F. Krasilnik, “Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE”, Appl. Phys. Lett. 118, 151902-6 (2021).
2. Yurasov, D.V., Baídakova, N.A., Verbus, V.A., Gusev, N.S., Morozova, E.E., Shengurov, D.V., Yablonskiy, A.N., Novikov, A.V. Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities (2021) Semiconductors, 55 (6), pp. 531-536.
3. Novikov, A.V., Smagina, Z.V., Stepikhova, M.V., Zinovyev, V.A., Rudin, S.A., Dyakov, S.A., Rodyakina, E.E., Nenashev, A.V., Sergeev, S.M., Peretokin, A.V., Dvurechenskii, A.V. One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate. (2021) Nanomaterials, 11 (4), статья № 909,
4. Nguyen, V.H., Novikov, A., Shaleev, M., Yurasov, D., Semma, M., Gotoh, K., Kurokawa, Y., Usami, N. Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask. (2020) Materials Science in Semiconductor Processing, 114, статья № 105065,
5. D.V. Yurasov, A.V. Novikov, N.A. Baidakova, V.Ya. Aleshkin, P.A. Bushuykin, B.A. Andreev, P.A. Yunin, M.N. Drozdov, A.N. Yablonskiy, A.A. Dubinov, Z.F. Krasilnik, “Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates”, Journal of Applied Physics 127, 165701-9 (2020);
6. Yurasov, D.V., Baidakova, N.A., Verbus, V.A., Gusev, N.S., Mashin, A.I., Morozova, E.E., Nezhdanov, A.V., Novikov, A.V., Skorohodov, E.V., Shengurov, D.V., Yablonskiy, A.N. Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics (2019) Semiconductors, 53 (10), pp. 1324-1328.
7. Yurasov, D.V., Baidakova, N.A., Drozdov, M.N., Morozova, E.E., Kalinnikov, M.A., Novikov, A.V. Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium (2019) Semiconductors, 53 (7), pp. 882-886.
8. Ota, Y., Yurasov, D., Novikov, A., Shaleev, M., Gotoh, K., Kurokawa, Y., Usami, N. Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures (2019) Japanese Journal of Applied Physics, 58 (4), статья № 045505, .
9. Yurasov, D.V., Novikov, A.V., Baidakova, N.A., Morozova, E.E., Yunin, P.A., Shengurov, D.V., Antonov, A.V., Drozdov, M.N., Krasilnik, Z.F. Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers (2018) Semiconductor Science and Technology, 33 (12), статья № 124019, .
10. Novikov, A.V., Yurasov, D.V., Morozova, E.E., Skorohodov, E.V., Verbus, V.A., Yablonskiy, A.N., Baidakova, N.A., Gusev, N.S., Kudryavtsev, K.E., Nezhdanov, A.V., Mashin, A.I. Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics (2018) Semiconductors, 52 (11), pp. 1442-1447.
11. D.V. Yurasov, A.V. Antonov, M.N. Drozdov, P.A. Yunin, B.A. Andreev, P.A. Bushuykin, N.A. Baydakova, A.V. Novikov, «Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE», J. Crystal Growth 491, 26-30 (2018)
12. D.V. Yurasov, A.V. Novikov, M.V. Shaleev, N.A. Baidakova, E.E. Morozova, E.V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, N. Usami, “Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon”, Materials Science in Semiconductor Processing 75, 143-148 (2018).
13. N. Baidus, V. Aleshkin, A. Dubinov, K. Kudryavtsev, S. Nekorkin, A. Novikov, D. Pavlov, A.Rikov, A. Sushkov, M. Shaleev, P. Yunin, D. Yurasov, Z. Krasilnik, “MOCVD growth of InGaAs/GaAs/AlGaAs laser structures with quantum wells on Ge/Si substrates”, Crystals 8, 311 (2018)
14. B.A. Andreev, K.E. Kudryavtsev, A.N Yablonskiy, D.N. Lobanov, P.A. Bushuykin, L.V. Krasilnikova, E.V. Skorokhodov, P.A. Yunin, A.V. Novikov, V.Yu Davydov, Z.F. Krasilnik, “Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures”, Scientific Reports (2018) 8:9454
15. Yurasov, D.V., Antonov, A.V., Drozdov, M.N., Yunin, P.A., Andreev, B.A., Bushuykin, P.A., Baydakova, N.A., Novikov, A.V. Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE. (2018) Journal of Crystal Growth, 491, pp. 26-30.

Вывенко Олег Федорович, доктор физико-математических наук, профессор, физический факультет, Федеральное государственное бюджетное образовательное учреждение высшего образования «Санкт-Петербургский государственный университет» , Web-сайт: www. spbu.ru , отзыв

Список публикаций по теме диссертации соискателя за последние 5 лет:

1. Danilov, D., Vyvenko, O., Loshachenko, A., & Sobolev, N. (2022). Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen‐Implanted Silicon. physica status solidi (a), 219(7), 2100662.
2. Danilov, D., Vyvenko, O., Loshachenko, A., & Sobolev, N. (2022). Electron Emission from the Electronic States of Oxygen Precipitates in Oxygen‐Implanted Silicon. physica status solidi (a), 219(7), 2100662.
3. Shapenkov, S., Vyvenko, O., Ubyivovk, E., & Mikhailovskii, V. (2022). Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN. Journal of Applied Physics, 131(12), 125707.
4. Petrov, Y. V., Grigoyev, E. A., Sharov, T. V., Ubiyvovk, E. V., Baraban, A. P., & Vyvenko, O. F. (2020, September). Nanofabrication by means of defect engineering with a focused helium ion beam. In CMD 2020 GEFES.
5. Danilov, D. V., Vyvenko, O. F., Loshachenko, A. S., & Sobolev, N. A. (2020, March). Peculiarities of electron emission from high-density deep levels of nanodefects in oxygen-implanted silicon. In Journal of Physics: Conference Series (Vol. 1482, No. 1, p. 012003). IOP Publishing.
6. Danilov, D., Vyvenko, O., Loshachenko, A., & Sobolev, N. (2019). Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages. physica status solidi (a), 216(17), 1900327.
7. Trushin, M., Varlamov, A., Loshachenko, A., Vyvenko, O., & Kittler, M. (2019, May). Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. In Journal of Physics: Conference Series (Vol. 1190, No. 1, p. 012005). IOP Publishing.
8. Danilov, D., Vyvenko, O., Trushin, M., Loshachenko, A., & Sobolev, N. (2019, May). Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon. In Journal of Physics: Conference Series (Vol. 1190, No. 1, p. 012016). IOP Publishing.
9. Anikeva, A. E., Petrov, Y. V., & Vyvenko, O. F. (2019, January). Secondary electron energy distribution from insulators in helium ion microscope. In AIP Conference Proceedings (Vol. 2064, No. 1, p. 020001). AIP Publishing LLC.
10. Vyvenko, O., & Bondarenko, A. (2019). Crystal lattice defects as natural light emitting nanostructures in semiconductors. In Progress in Photon Science (pp. 405-436). Springer, Cham.
11. Bondarenko, A., & Vyvenko, O. (2018). Band-like behavior of localized states of metal silicide precipitate in silicon. Journal of Electronic Materials, 47(9), 4975-4979.
12. Petrov, Y. V., Anikeva, A. E., & Vyvenko, O. F. (2018). Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 425, 11-17.
13. Maksimova, K. Y., Kozlov, A. A., Shvets, P. V., Koneva, U. Y., Yurkevich, O. V., Lebedev, O. I., ... & Goikhman, A. Y. (2018). Copper-Stabilized Si/Au Nanowhiskers for Advanced Nanoelectronic Applications. ACS omega, 3(2), 1684-1688.

Плюснин Николай Иннокентьевич, Старший научный сотрудник, Научно-исследовательский центр, Федеральное государственное казенное военное образовательное учреждение высшего образования «Военная орденов Жукова и Ленина Краснознаменная академия связи имени маршала Советского Союза С.М. Буденного» министерства обороны Российской Федерации , Web-сайт: vas.mil.ru , отзыв

Список публикаций по теме диссертации соискателя за последние 5 лет:

1. Плюснин Н.И. СТРАТИФИКАЦИЯ ГРАНИЦЫ РАЗДЕЛА Fe/ Si(001)2×1 ОТЖИГОМ СМАЧИВАЮЩЕГО СЛОЯ. Журнал технической физики, 2022 (в печати)
2. PLYUSNIN, N.I., USACHEV, P.A. and PAVLOV, V.V., 2022. Effect of thickness and annealing of the Si(001)2×1-Cu wetting layer on the morphology of layered nanofilms based on Fe, Co, and Cu and their ferromagnetic properties. St. Petersburg State Polytechnical University Journal. Physics and Mathematics, vol. 15, no. 3.1, pp. 131–136. DOI 10.18721/JPM.153.122.
3. Influence of Structure-Phase State on Surface Morphology of FeSi2 Nanofilms During RBE-MBE Growth on Si (001) 2× 1 NI Plusnin Solid State Phenomena 312, 62-67 2020
4. Formation of Fe2Si Wetting Coating on Si (001) 2× 1 and Growth of a Stable Fe Nanolayer: AES and EELS Study NI Plusnin, AM Maslov, VM Il’yashenko Solid State Phenomena 312, 9-14 2020
5. Феноменологические модели зарождения и роста металла на полупроводнике НИ Плюснин Физика твердого тела 61 (12), 2421-2424 2 2019
6. Atomic-Force Microscopy Probe-Activated Morphological Transformations in a Nanophase Copper Wetting Layer on Silicon NI Plusnin, AM Maslov Technical Physics Letters 44 (3), 187-190 2018
7. Формирование нанофазного смачивающего слоя и рост металла на полупроводнике НИ Плюснин Письма в Журнал технической физики 44 (21), 64-72 2018
8. Морфологические превращения в нанофазном смачивающем слое меди на кремнии, активированные давлением зонда атомно-силового микроскопа НИ Плюснин, АМ Маслов Письма в ЖТФ 5, 16-24 1 2018
9. Evolution of Optical Spectra at the Initial Stages of Fe Growth on Si (001) AM Maslov, NI Plusnin Defect and Diffusion Forum 386, 15-20 4 2018
10. Wetting Layer and Formation of Metal-Semiconductor Interface NI Plusnin Defect and Diffusion Forum 386, 9-14 5 2018
11. Subnanophase coatings as new type low-dimensional nanomaterials: Ultra-high-vacuum synthesis, properties and application, N Pliusnin, Characterization and Application of Nanomaterials 3 (2), 81-86, 2020
12. From atomic-scale interfaces—To new nanomaterials, N Plusnin, Characterization and Application of Nanomaterials 2 (2), 54-59, 2019