ПУБЛИКАЦИИ
1999
Neizvestnyi I.G., Suprun S.P., Shumsky V.N. Possibilities of the growing surface control during MBE // Physics of Low-Dimensional Structures. 1999. Т. 1999. № 3-4. С. 143-152.
The possibilities to control the parameters of the semiconductor structures formed during the technological process by means of X-ray spectral analysis (XRS) and scattered laser radiation analysis (SR) are discussed. It is shown that XRS is sufficiently sensitive and well agrees with the MBE technique. Changes of characteristic X-ray spectra during the periodical structure growth are analyzed. Behaviour of the SR intensity during the heating of GaAs substrate and subsequent ZnSe and Ge film growth is investigated.
Suprun S.P., Shumsky V.N. Characteristics of heterojunctions with high band discontinuities // Physics of Low-Dimensional Structures. 1999. Т. 1999. № 3-4. С. 119-130.
Calculation of I-V and C-V characteristics of the heterojunction with high band discontinuities is made without any tentative assumptions. The analysis of the heterojunction peculiarities associated with the charge accumulation of the minority carriers is carried out.
Neizvestnyi I.G., Suprun S.P., Shumsky V.N. Investigation of scattered radiation during molecular beam epitaxy // Physics of Low-Dimensional Structures. 1999. Т. 1999. № 3-4. С. 111-118.
An investigation of the scattered laser radiation from the surface of GaAs substrates during the heating before MBE and during Ge and ZnSe-epilayers growth is performed. It has been shown that this method can be used to detect changes of the physically absorbed overlayer on (001) GaAs and appearance of (4 X 2) reconstruction of (001) GaAs surface as well as the appearance of (2 X 2) reconstruction of (001) Ge. Also, this method allows to control the morphology of growing Ge film. The scattered radiation can be used as the main or additional non-destructive approach to monitoring of the substrates and films surface state in situ.
1998
Варавин В.С., Дворецкий С.А., Климов А.Э. Шумский В.Н. Определение характеристик эпитаксиальных пленок CdxHg1-xTe путем измерения эффекта Холла при освещении // Автометрия. 1998. Т.36. № 4. С.59-70.
Проведен анализ зависимости эффекта Холла в эпитаксиальных пленках CdxHg1-xTe от концентрации электронов и дырок для однородных и неоднородных образцов. Показано, что определение концентрации носителей заряда и их подвижности в пленках p–типа проводимости по измерениям без дополнительных исследований представляется возможным только в случае достаточно большой концентрации дырок. Предложен метод определения характеристик пленок при освещении, позволяющий разделить электронную и дырочную проводимости и получить информацию об однородности пленок.
Ерков В.Г., Девятова С.Ф., Голод И.А., Тимофеева Г.В., Покровский Л.Д. // Микроэлектроника. 1998. Т. 27. № 3. (перевод - Erkov V.G., Devyatova S.F., Golod I.A., Timofeeva G.V., Pokrovskii L.D. Deposition and properties of titanium nitride films obtained by TiCl4 ammonolysis in the LPCVD process // Russian Microelectronics. 1998. Т. 27. № 3. С. 183-187.)
Low-resistivity (100 μΩ cm) titanium nitride films with a small (5%) scatter in thickness over the wafer were synthesized from a gas mixture of titanium tetrachloride, hydrogen, and ammonia in a low-pressure hot-wall reactor. The effect of the TiN synthesis temperature on the film growth rate, composition, grain size, and resistivity was studied. The activation energy for the selected deposition conditions and reagents was found to be 12.9 kcal/mol.
Ерков В.Г., Девятова С.Ф., Каратаева Н.Д., Молодцова Е.Л. // Микроэлектроника. 1998. Т. 27. № 3. (перевод - Erkov V.G., Devyatova S.F., Karataeva N.D., Molodtsova E.L. The properties of MOCVD ZrO2 films obtained by the interaction of zirconium pivalyltrifluoroacetonate with oxygen // Russian Microelectronics. 1998. Т. 27. № 3. С. 174-178.)
ZrO2 films of monoclinic modification were obtained in a hot-wall low-pressure MOCVD reactor by the interaction of zirconium pivalyltrifluoroacetonate with oxygen. The films have the following parameters: refractive index close to 1.9, permittivity 12-14, resistivity 1.5 × 1012 Ω · cm, breakdown field strength on the order of 106 V · cm-1, and negative built-in charge on the order of (2-3) × 10-8 C · cm-2.
1997
Девятова С.Ф., Ерков В.Г., Молодцова Е.Л. Исследование кинетики роста термического диоксида кремния при пониженных давлениях кислорода // Микроэлектроника. 1997. Т. 26. № 3. С. 236-240. (перевод - Devyatova S.F., Erkov V.G., Molodtsova E.L. Growth kinetics of thermal silicon dioxide at low oxygen pressure // Russian Microelectronics. 1997. Т. 26. № 3. С. 202-205.)
Выращивались тонкие слои диоксида кремния на Si(100) и Si(111) при давлениях сухого кислорода 1-80 торр и температурах 800-900°С. Было установлено, что в таких условиях термическое окисление кремния описывается линейным законом и лимитируется скоростью химической реакции диссоциированного кислорода с кремнием на границе Si-SiO2. Энергия активации процесса окисления равна 1.83 эВ и соответствует разрыву связи Si-Si. Thin layers of silicon dioxide were grown on Si(100) and Si(111) substrates at dry oxygen pressures of 1-80 torr and temperatures between 800 and 900°C. It was shown that in these conditions thermal oxidation of silicon obeys a linear law and is controlled by the chemical reaction of dissociated oxygen with silicon at a Si-SiO2 interface. The activation energy of the process was found to be 1.83 eV, which corresponds to the dissociation of Si-Si bonds.
1996
Талочкин А.Б., Марков В.А., Супрун С.П., Никифоров А.И. Комбинационное рассеяние света на оптических фонолах в Si-Ge-Si-структурах с квантовыми точками. // Письма в Журнал экспериментальной и теоретической физики. 1996. № 64. № 3. С. 203-207. (перевод - Talochkin A.B., Markov V.A., Suprun S.P., Nikiforov A.I. Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots // JETP Letters. 1996. Т. 64. № 3. С. 219-224. DOI: 10.1134/1.567178)
Исследовано комбинационное рассеяние света на оптических фононах в Si-Ge-Si структурах с псевдоморфными квантовыми точками германия. Наблюдалось резонансное усиление интенсивности рассеяния на E00 (Γ7-Γ8)-переходах. Показано, что энергия резонанса возрастает на ~0,3 эВ по сравнению с двумерным случаем в результате образования слоя квантовых точек германия. Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated. Resonance amplification of the scattering intensity on E00 (Γ7-Γ8) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the resonance energy is ~0.3 eV higher than in the two-dimensional case.
1995
Suprun S.P., Talochkin A.B., Gutakovskiy A.K., Shumsky V.N. Determination of thickness of heteroepitaxial extra thin layers by Raman spectroscopy // Physics of Low-Dimensional Structures. 1995. Т. 1995. № 1. С. 59-66.
For the first time systems of Ge quantum dots were formed using molecular beam epitaxy in unstrained GaAs/ZnSe/Ge heterostructure and their properties were studied with scanning tunnel microscopy and Raman spectroscopy.
1994
Fedosenko E.V., Klimov A.E., Krivopalov D.V., Neizvestny I.G., Petikov N.I., Torlin M.A., Shumsky V.N. Morphology and photoelectrical properties of Pb1-xSnxTe films on BaF2 substrates prepared by MBE technique // Physics of Low-Dimensional Structures. 1994. № 10. С. 45-52.
The investigation of the components distribution over the surface and the bulks of In-doped lead-tin tellurium (LTT) films prepared by molecular beam epitaxy (MBE) techniques is carried out and its influence on the film electrophysical properties is discussed.
Klimov A.E., Krivopalov D.V., Neizvestnyi I.G., Shumsky V.N., Petikov N.I., Torlin M.A., Fedosenko E.V. Surface LTT - film structure with in doping // Applied Surface Science. 1994. Т. 78. № 4. С. 413-420. DOI: 10.1016/0169-4332(94)90065-5
A complex analysis of In-doped PbSnTe films has revealed their inhomogeneity in structure and in composition as well. A more detailed exploration has shown that a spatial phase separation occurred during film formation in the MBE process. Use of various surface science techniques has permitted an investigation of the distribution of the elements on the surface and in depth and this allowed us to find out the influence of some growth process conditions on the properties of the films.
1993
Akimov B.A., Ryabova L.I., Shumskiy V.N., Petikov N.I. An operating regime based on switching effects for photodetectors of Pb1-xSnxTe(In) MBE films // Infrared Physics. 1993. Т. 34. № 4. С. 375-378. DOI: 10.1016/0020-0891(93)90069-J
Pb1-xSnxTe(In) (x = 0.20) MBE films have been prepared on BaF2 substrates. The characteristics of resistivity relaxation under the combined effect of a pulsed electric field and IR illumination have been investigated. We have shown that the films can be used as rather fast-response photodetectors operating in a regime of periodic accumulation and quenching of the signal.
1992
Васин О.И., Климов А.Э., Кривопалов Д.В., Неизвестный И.Г., Шумский В.Н. Датчик температуры на диапазон 4,2-300К. // Приборы и техника эксперимента. 1992. Т. 35. № 4. С. 243. (перевод - Vasin O.I., Klimov A.E., Krivopalov D.V., Neizvestnyj I.G., Petikov N.I., Shumskij V.N. Temperature sensor for 4.2-300K // Instruments and Experimental Techniques. 1992. Т. 35. № 4. С. 243.)
The sensor is a resistor based on solid solution lead-tin-tellurium film obtained by molecular beam epitaxy. The device particularity consists in high sensitivity near room temperature. The current temperature relationship is given for bias voltage at one of the detectors equal to 0.2 V. The device can be used in cryogenics and experimental facilities, when measurements in wide range of temperatures are required.
1991
Neizvestny I.G., Palkin A.M., Shumsky V.N., Sozinov V.N., Stankevich E.T., Vasin O.I. Far infrared magneto-photoconductivity investigation of PbTe/Pb0.8Sn0.2Te superlattices // Superlattices and Microstructures. 1991. Т. 10. № 3. С. 291-293. DOI: 10.1016/0749-6036(91)90328-O
Far infrared magneto-photoresponse experiments were carried out on PbTe/Pb1-xSnxTe superlattices (x=0.20) grown on BaF2(111) substrates by MBE technique. The photoresponse was measured at 4.2 K in the Faraday geometry with better resolution than measured by magnetotransmission. Several response peaks in the spectrum were observed. The analysis showed these peaks are associated with cyclotron and spin-flip transitions of electrons in a- and b-valleys of subbands n-PbTe.
1990
Васильева Л.Ф., Климов А.Э., Неизвестный И.Г., Шумский В.Н. Электрические свойства мезадиодов на основе халькогенидов свинца и олова, пассивированных теллуридом и сульфидом цинка // Электронная техника, серия «Материалы». 1990. № 7. С. 252.
Васин О.И., Неизвестный И.Г., Торлин М.А., Шумский В.Н. Применение рентгеноспектрального анализа для контроля периодических структур при молекулярно-лучевой эпитаксии. // Поверхность. Физика, химия, механика. 1990. № 9. С. 53-60.
1989
Васин О.И., Неизвестный И.Г., Торлин М.А., Шумский В.Н. Рентгеноспектральный анализ растущей пленки в процессе молекулярно-лучевой эпитаксии // Поверхность. Физика, химия, механика. 1989. № 10. С. 89-93.
Lamin M.A., Neizvestnyi I.G., Palkin A.M., Pchelyakov O.P., Sadof'ev Yu.G., Sokolov L.V., Stenin S.I., Toropov A.I., Sherstyakova V.N., Shumskii V.N. Molecular-beam epitaxy and properties of Ge/GaAs and Ge/Si heterojunctions // Soviet Microelectronics. 1989. Т. 18. № 1. С. 1-5.
The heteroepitaxy of germanium on GaAs and Si substrates was investigated. The molecular beam epitaxy station had a load-lock structure, a built-in Auger spectrometer, and a fast-electron diffractometer for monitoring the cleanliness of the surface and the structure of the substrate and growing film. Hall effect measurements showed that independent of the growth conditions, the method of creating the Ge molecular beam (crucible or electron-beam evaporation), and the substrate type, the Ge films had p-type conduction. Two sources of uncontrolled dopants were identified: shallow acceptors independent of the substrate that are determined by the flux of impurities from the growth chamber, and a second source on GaAs is evidently from free gallium formed by dissociation of GaAs during preepitaxial annealing.
Vasin O.I., Klimov A.E., Neizvestnyi I.G., Shumskii V.N. Three-layer structure of Pb0.8Sn0.2Te epitaxial films prepared by MBE technique on BaF2 // Physica Status Solidi (A) Applied Research. 1989. Т. 114. № 1. С. 161-166.
The Hall effect was investigated in p-Pb0.8Sn0.2Te films within the T = 70 to 600 K range in a vacuum cryostat with samples having no contact with the atmosphere after annealing. At the heating temperatures T ≈ 520 K and above the temperature-dependent behaviour of the Hall coefficient, RH begins to change which leads to the shift of the RH inversion temperature to the low range down converting the conductance into n-type over the entire temperature range. The results obtained are explainable by a three-layer p-n-p+ model, where p is the quasi-volume, n – a subsurface layer associated with the sample production technique, p+ – a thin surface layer caused by contact with the atmosphere. Auger analysis data point to the role of tellurium in the formation of the layer film structure.
1988
Васин О.И., Климов А.Э., Неизвестный И.Г., Петиков Н.И., Филатова Е.С., Шумский В.Н. Время жизни неравновесных носителей заряда в объеме и рекомбинация на границах в пленках Pb0.8Sn0.2Te на BaF2. // Физика и техника полупроводников. 1988. Т. 22. № 7. С. 1299-1302.
Васин О.И., Климов А.Э., Неизвестный И.Г., Петиков Н.И., Свешникова Л.В., Шумский В.Н. Получение атомарно чистой поверхности подложек BaF2 для эпитаксиального роста соединений А4В6. – Поверхность. Физика, химия, механика. 1988. № 12. С. 55-60.
The Hall effect was investigated in p-Pb0.8Sn0.2Te films within the T = 70 to 600 K range in a vacuum cryostat with structure.
Климов А.Э. Многофункциональный гелиевый криостат с регулируемой температурой. // Приборы и техника эксперимента. 1988. № 2. С. 231.
1987
Пусеп Ю.А., Синюков М.П. Резонансная структура спектров отражения PbSnTe, обусловленная эффектами локализации носителей заряда // Письма ЖЭТФ. 1987. Т. 45. № 9. С. 449-451. (перевод - Pusep Yu.A., Sinukov M.P. Resonance structure in PbSnTe reflection spectra due to charge-carrier localization // JETP Lett. 1987. V.45. № 9. P. 575-578.)
Обнаружена резонансная структура в спектрах отражения твердых растворов PbSnTe в области полосы остаточных лучей, которая связывается с локализованным состоянием примеси. (A resonance structure has been found in the reflection spectra of solid solutions near a residual-ray band. This structure is attributed to a localized state of free carriers.)
1986
Климов А.Э. Универсальная магнитооптическая насадка для криостатов // Приборы и техника эксперимента. 1986. № 4. С. 231.
1985
Васин О.И., Климов А.Э, Неизвестный И.Г., Шумский В.Н. Молекулярная эпитаксия Pb1-xSnxTe на подложках Ge, Si, GaAs, InSb, BaF2 // Поверхность. Физика, химия, механика. 1985. № 7. С. 66-71.
1983
Климов А.Э., Неизвестный И.Г., Шумский В.Н. Избыточные шумы в диодах на основе Pb1-xSnxTe и их связь с вольтамперными характеристиками // Физика и техника полупроводников. 1983. Т. 17. № 10. С. 1766-1770.
Экспериментально измерена зависимость спектральной плотности шума 1/f от напряжения смещения в диодах на Pb1–xSnxTe. Совместным анализом вольтамперных и шумовых зависимостей показано, что источником избыточного шума является омический канал утечки. Учет тока канала утечки позволил получить хорошее согласие между экспериментальными и расчетными характеристиками в области напряжений смещения -0.1 < V < 0.06 В. Определены эффективное время жизни неосновных носителей заряда и эффективная масса туннелирования.
1977
Kravchenko A.F., Lisenker B.S., Maronchuk Yu.E., Sherstyakov A.P., V.N. Sherstyakova Investigation of Recombination of Non-Equilibrium Carriers in GaAs Epitaxial Layers. // Phys. Stat. Sol. A. 1977. Т. 42. № 2. С. 647- 655.
Experimental results of combined investigations of steady-state photoconductivity: spectral dependence, kinetics both in intrinsic and extrinsic regions, their temperature and field dependences, and also the spectral dependence of the generation-recombination noise (GRN) are presented. The energy spectrum of impurity centers in undoped GaAs epitaxial layers and their recombination parameters are found. It is shown that in the investigated layers deep recombination centers with various energy depths differing in the time of electron capture from to s can be found along side with shallow trapping levels for minority charge carriers, EV + 0.03 and EV + 0.016 eV. The longest PC relaxation times, ~10-3 and ~1 s, are determined by the presence of acceptor centers with the repulsive potential barrier lying below the bottom of the conduction band (Ec - 0.04 eV, Ec - (0.1 to 0.2) eV). A number of peculiarities in the PC spectral dependence and its kinetics are found in the impurity region. A common recombination model for the investigated GaAs layers is discussed.
1976
Лисенкер Б.С., Лисенкер С.С., Марончук Ю.Е., Шерстякова В.Н. Примесная проводимость в эпитаксиальных слоях арсенида галлия // Известия ВУЗов. Серия: Физика. 1974. № 11. С. 19-23. (перевод - Lisenker B.S., Lisinker S.S., Maronchuk Yu.E., Sherstyakova V.N. Impurity photoconductivity in epitaxial layers of gallium arsenide // Soviet Physics Journal. 1976. Т. 17. № 11. С. 1491-1494. DOI: 10.1007/BF00891097)
Impurity photoconductivity spectra in the range 0.5-1.5 eV are studied in epitaxial layers of n-GaAs grown on substrates of semiconductive GaAs with ρ > 106 Ω$middot;cm in the system Ga-AsCl3 -H2. The effect of uncontrolled acceptor impurities on the impurity photoconductivity spectrum is evaluated.
Aseev A.L., Pogorelov Yu.N., Stenin S.I., Shumsky V.N. Influence of the method of preparation on the structure and properties of Ge-GaAs heterojunctions // Thin Solid Films. 1976. Т. 32. № 2. С. 351-354. DOI: 10.1016/0040-6090(76)90331-X
