V. M. Efimov

V.M. Efimov
Senior researcher, PhD in phys.-math. sci.
E-mail:

Valery Efimov received the B.A. and M.S. degrees in semiconductor physics from the Novosibirsk State University, Russia, in 1974. He obtained his PhD degree in physics and mathematics from Institute of Semiconductor Physics in 1981. From 1981 he has been the Senior Researcher of Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk. He studied the conduction processes in the large class of such dielectrics as BN, SixNyHz, SiO2, and SixOyOH. Three PhD thesis were defended with his supervision. He was one of the first in Russia who developed the technology of hybridization of FPA matrix photodetectors. Now his research interests include the phenomenas of carrier transport and conductivity in carbon nanotubes and CNT films and networks mainly for gas and biological sensors. V.M. Efimov is the translator (to Russian) of the book Carbon Nanotubes Science of Peter J. F. Harris (2016), he is the author more than 50 publications, and holds more than ten patents. Since 2015, he has been teaching at Novosibirsk State University the physics of carbon nanotubes.


The selected publications

  1. V. M. Efimov, V. A. Kolosanov, and S. P. Sinitsa, Electron and Hole Conduction in Silicon Nitride at Moderate Electric Fields, Phys. Stat. Sol. (a) 49, 217 (1978)
  2. S. A. Birukov, V. M. Efimov, V. A. Kolosanov et al., Charge Transport in MNOS Structures with Metal Grains at the Silica-Silicon Nitride Interface, Phys. Stat. Sol. (a) 58, 87 (1980)
  3. V. M. Efimov, Study of Thin Silicon Nitride Films by Isothermal Depolarization of MNOS Structures, phys. stat. sol. (a) 65, 177 (1981)
  4. V. M. Efimov, E. E. Meerson, and A. A. Evtuk, Study of Tunnel Currents of Electrons and Holes in Thermal SiO2 with Charge Accumulation in the Dielectric, phys. stat. sol. (a) 91, 693 (1985)
  5. V. M. Efimov, D. G. Esaev et al., E. E. Meerson et al., Charge Transport through Layers of Thermally Nitrided SiO2, phys. stat. sol. (a) 98, 319 (1986)
  6. I. I. Belousov, V. M. Efimov, S. P. Sinitsa et al., Charge Transport in MOS-Structures with Low-Temperature Silicon Dioxide Films, phys. stat. sol. (a) 125, 387 (1991)
  7. D. G. Esaev, V. M. Efimov, A. A. Shklyaev, Effect of hydrogen on hot electron energy relaxation in SiO2 and Si3N4 films, Thin Solid Films, 221, (1992), 160
  8. V. M. Efimov, Z. V. Panova, A., V., Malygyn et al., Physico-Chemical Properties of Plasma Deposited Silicon Nitride Films, phys. stat. sol. (a) 129, 483 (1992)
  9. V. M. Efimov, D. G. Esaev, Method for determining critical pressure in assembling hybrid MCT focal plane arrays, Optoelectronics, Instrumentation and Data Processing, vol. 43, Nb. 4, p. 370, 2007
  10. V. M. Basovkin, A.A.Gusev, V.M.Efimov et al., The focal plane array based on MIS-photodiodes on InAs for pulse optical date registration, Proc. SPIE N6636, 07, 2007
  11. В. М. Ефимов, Современное состояние применения углеродных нанотрубок в наноэлектронике, стр. 192-216 в книге: Углеродные нанотрубки: синтез, свойства и применение / Питер Харрис; перевод с английского под редакцией Двуреченского А.В.; переводчик Ефимов В.М.; Институт физики полупроводников им. А.В. Ржанова. - Новосибирск : ОФСЕТ-ТМ, 2016. ISBN 978-5-85957-133-8.
    Пер.: Harris, Peter J. F. Carbon nanotube science. Synthesis, properties and applications Cambridge: University press, ISBN 2012 978-0-521-82895-6