BASIC TRENDS OF RESEARCH

• Physicochemical principles of the active and passivating films formation for A₃B₅ semiconductors.
• Fundamental studies of electronic processes in ultrathin (1-20 nm) dielectric layers.
• Scientific instruments engineering.

STAFF MEMBERS

Including: 12 scientists (3 Doc., 5 Ph.D.) and 12 engineering and technical staff.

The laboratory is located:

Laboratory and Technological Building of the IPP SB RAS (research part) at the address: Novosibirsk, Prospekt Akad. Lavrentieva 13, and the Thermostat Building of the IPP SB RAS (technological part) at the address: Novosibirsk, str. Pirogov, 30.