

Aim:
building-in (inclusion) in the complex of photon components of fiber-optical communication lines, including that based on one uniform silicon chip.
Description parameters:
- wavelength range - 1.3-1.55 µm,
- quantum efficiency - to 21%,
- functioning t — room temperature.
Technological bases:
Ge/Si heterostructures with quantum dots MBE.


- Technology of fabrication of arrays of Ge quantum dots in Si was developed
- Nanotransistor with a layer of Ge quantum dots in a Si channel was produced
Application:
- New quantum electron and optoelectron devices functioning at room temperature (electrometers, memory elements),
- Element base of the XXI century's computing devices of higher rapidity.

A.Ioffe PTI, St.-Petersburg
Institut fuer Festkorperphysik and Center of NanoPhotonics Technische Universitat Berlin

Schematic illustration of parallel optical network based on VCSELs array (A), device layout (B) and microscope image of the developed VCSEL (C).
The development of the array configuration of such VCSELs can open the prospects for 1 Tbit/s optical network.
The A.V. Rzhanov institute of semiconductor physics SB RAS, A.Ioffe PTI, St.-Petersburg, Institut fuer Festkorperphysik and Center of NanoPhotonics Technische Universitat Berlin.

Characteristics
Parameters of tested SOI CMOS integral circuits (IC) based on 90 nm partially depleated SOI CMOS field effect transistors (FET’s) were investigated both theoretically and experimentally. Low values of threshold voltages (±0,6 V) were obtained by thinning of nitrided gate oxide up to 5 nm and isotype doping of poly- crystalline gates lied over highly doped n- and p-channels (~1018 сm-3) of transistors. As was shown at extreme condition of testing at increased temperatures up to 250°C and totaldose irradidation up to 50 Mrad all invertors have the same transfer characteristics, as at room temperature and all irradiated invertorsafter dose 10 Mrad also have trial characteristics as unirradiated ones keeping leakage current below 2×10-8 А.
Low shifts in characteristics of SOI
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Fig.1. AFM image of 90 nm silicon gates CMOS IC’s even at more higher temperatures |
All technology is based on domestic technological equipment as well as on FET devices and SOI structures, developed in ISP SB RAS. Russian analogs are absent. All elements of IC’s are adapted not only to 90 nm but also to 1-2 mm technological nodes, which are common for the Russian industrial microelectronics plants.
Fields of applicationSOI CMOS IC’s are useable in extreme environment of high energy nuclear physics, geophysics, nuclear plant production, aviation and cosmic unperturbed telecommunication and transport systems, which can also be experienced with high thermal loadings.
SOI IC’s elements are developed, that applicable as well as for design of large and very large scale integration IC’s of SRH IC’s class and for commercial IC’s in automatic and control for high temperature parameters of fuel motors and power electric engines.
SOI production technology of ISP SB RAS is protected by 4 Russian patents and PCT invents. SOI CMOS FET’s design is based on the row of "know-how"s, which are not sent yet to the patent authorities.

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A brand-new semiconductor nanosystems structuring technology based on deep local anode oxidation of Ti GaAs ans Si surfaces with the conducting atom-voltaic microscope probe using additional potential was elaborated. This technology allowed us to master a principally new size scale in nanostructures fabrication (10 - 100 nm). A quantum interferometer, efficient radius 90 nm, was developed and produced. So small sizes allowed us to increase the interferometer functional temperature a level higher (to 15 K).
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Topographical (a) and phase (b) images of AlGaAs/GaAs with a section of locally oxidised probe of atom-voltaic microscope (quantum interferometer) (c) - profile of relief along the red span AB. (d) Aaron Bohm interferometer oscillations. Oscillation period B = 0.16 T is adequate to efficient radius r = 90 nm.
Application field:
nanotechnology;
magnetic sensors.
Contact us:
Institute of Semiconductor Physics , 13 Ac. Lavrentyev Ave., 630090, Novosibirsk, Russian Federation, tel.: +7(383)333-10-80, fax: +7(383)333-27-71, e-mail:

Aim: | Information transmition from the transmitter (Alice) to the detector (Bob) over optical connection line with absolute secrecy. |
Problems: | 1. Classical transmission line with a big number of photons is not protected from eavesdropping. 2. Classical cryptography is based on the absence of rapid factorisation algorithm for big numbers. |
Method: | Information carrier - single polarized photon |
Base: | Laws of quantum mechanics - each measurement changes a photon quantum state. Spy (Eva) eavesdropping is connected with measurement and further reproduction (cloning) of a photon state. However, precise photon cloning is impossible! |

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Coded phrase:
Greetings to the participants of the third seminar devoted to the memory of D.N. Klyshko!
Decoded phrase:
Greetings to the partivicipants of the third emi8nar devGot(ed to the memory of D.N. Klyshko!
Адрес:
Institute of Semiconductor Physics , 13 Ac. Lavrentyev Ave., 630090, Novosibirsk, Russian Federation, tel.: +7(383)333-24-08, e-mail: