LABORATORY OF NON-EQUILIBRIUM SEMICONDUCTOR SYSTEMS

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2011 | 2010 | 2009 | 2005-2008 | articles 1987-2004

2010 Articles | Invited reports | Conference proceedings

ARTICLES

Authors Article Published File
A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Osterbacka, A. V. Dvurechenskii, F. GebhardRole of diffusion in two-dimensional bimolecular recombination Appl. Phys.Lett., 2010, V. 96, No. 21, 213304
F. Jansson, A. V. Nenashev, S. D. Baranovskii, F. Gebhard, R. OsterbackaNegative differential conductivity in the hopping transport modelPhysica status solidi A, 2010, V. 207, No. 3, p. 613-616
A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Osterbacka, A. V. Dvurechenskii, F. GebhardEffect of electric field on diffusion in disordered materials. I. One-dimensional hopping transportPhys. Rev B, 2010, V. 81, No. 11, 115203
A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Osterbacka, A. V. Dvurechenskii, F. GebhardEffect of electric field on diffusion in disordered materials. II. Two- and three-dimensional hopping transport Phys. Rev. B, 2010, V. 81, No. 11, 115204
A. V. Nenashev, A. V. Dvurechenskii Strain distribution in quantum dot of arbitrary polyhedral shape: Analytical solution J. Appl. Phys., 2010, V. 107, No. 6, 064322
T. S. Shamirzaev, D. S. Abramkin, A. V. Nenashev, K. S. Zhuravlev, F. Trojanek, B. Dzurnak, P. MalyCarrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dotsNanotechnology, 2010, V. 21, No. 15, 155703
A.I. Yakimov, A.A. Bloshkin, and A.V. DvurechenskiiCalculating the energy spectrum and electronic structure of two holes in a pair of strained Ge/Si quantum dots Phys. Rev. B, 2010, 81, ¹ 11, 115434
A.I. Yakimov, A.A. Bloshkin, and A.V. DvurechenskiiDouble-occupancy probability and entanglement of two holes in double Ge/Si quantum dotsÏèñüìà â ÆÝÒÔ, 2010, 91, ¹ 1, ñòð.37
A. F. Zinovieva, A. V. Dvurechenskii, N. P. Stepina, A. I. Nikiforov, A. S. Lyubin, L. V. KulikDirect measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arraysPhys. Rev. B. 2010, V.81, 113303
Ï.Ï.Ëàêòèîíîâ, Ä.Â.Ïûøíûé, Ñ.È. Ðîìàíîâ"Êëåòêà" äëÿ êëåòîêÍàóêà èç ïåðâûõ ðóê, 2010, ¹2 (32), ñòð.26-27
Î.Á. Âàéíåð, Ñ.È. Ðîìàíîâ, Ñ.Ã. Ìèðîíîâ, Ä.Â. Ïûøíûé, È.À. Ïûøíàÿ, Å.Â. Äìèòðèåíêî, È.À. Çàïîðîæ÷åíêî, Ï.Ï. ËàêòèîíîâÈñïîëüçîâàíèå ìèêðîêàíàëüíûõ êðåìíèåâûõ ìàòðèö äëÿ ðàçìåð-ñåëåêòèâíîé ñåïàðàöèè êëåòîêÂåñòíèê ÍÃÓ, 2010, ò. 2, ¹2, ñòð. 5-12
A.F. Zinovieva, A.S. Lyubin, N.P. Stepina, E.S. Koptev, A.I. Nikiforov, A.V. Dvurechenskii, N.A. Sobolev and M.C. CarmoSpin dynamics in two-dimensional arrays of quantum dots with different shapesJournal of Physics: Conference Series, 2010, 245. pp. 012052 (4)
J.V. Smagina, V.A. Zinoviev, P.L. Novikov, V.A. Armbrister, Koptev E.S., A.V. DvurechenskiiGe/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxyJournal of Physics: Conference Series, 2010, 245, pp. 012071(4)
N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, A.I. Nikiforov, D. Gruetzmacher, J.Moers and J. GerharzPhoto-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dotsJournal of Physics: Conference Series, 2010, 245, pp. 012034
E.I. Gatskevich, V.L.Malevich, G.D. Ivlev, V.A. Zinovyev, J.V. Smagina, V.A. Armbrister, A.V. DvurechenskiiLaser-stimulated thermodiffusion processes in Ge/Si heterostructures with quantum dotsPhysics of Extreme States of Matter, 2010, pp. 136-139
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INVITED REPORTS

AuthorsArticle Conference File
À.Â.Äâóðå÷åíñêèéÏîëóïðîâîäíèêîâûå êâàíòîâûå íàíîñòðóêòóðû è ñèíõðîòðîííîå èçëó÷åíèå18-ÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ ïî ñèíõðîòðîííîìó èçëó÷åíèþ, ÑÈ-2010, 19-22 èþëÿ 2010, Íîâîñèáèðñê
A.V.Dvurechenskii, J.V. Smagina, P.L. Novikov, V.A.ZinovievIon-molecular beam technique for preparation of epitaxial Ge/Si nanostructures5th Joint China-Russia Workshop on Advanced Semiconductor Materials and Devices, May, 3 – 9, 2010, Beijing, China
A.V.DvurechenskiiQuantum nanostructures for nanoelectronics: contribution of Siberian Branch of Russian Academy of ScienceThe European Commission Meeting, June 8, 2010, Moscow
A. V. Dvurechenskii, A.I.YakimovSi/Ge quantum dot heterostructures for optical interconnects in nanoelectronicsEuropean-Russian Nanoelectronics Technology Conference 2010 on Networking, June, 10 - 12 2010, Academic University St. Petersburg, Russia
A.V. DvurechenskiiGermanium-silicon tunnel-coupled quantum dot array: homogeneity and electron spin propertiesIMEC seminar, March 12, Leuven, Belgium
À.Â.Äâóðå÷åíñêèéÏåðñïåêòèâíûå ìàòåðèàëû è íàíîòåõíîëîãèè äëÿ ôîòîïðèåìíèêîâ ýëåêòðîìàãíèòíîãî èçëó÷åíèÿ6-ÿ øêîëà ïî àêòóàëüíûì ïðîáëåìàì ôèçèêè, ìàòåðèàëîâåäåíèÿ, òåõíîëîãèè è äèàãíîñòèêè êðåìíèÿ, íàíîìåòðîâûõ ñòðóêòóð è ïðèáîðîâ íà åãî îñíîâå. Êðåìíèé-2010. 6-9 èþëÿ 2020, Íèæíèé Íîâãîðîä
A.V.Dvurechenskii, A.V.Nenashev, A.I.Yakimov, A.F.ZinovevaStrain Physics in Ge/Si Dense Array Quantum Dot Nanostructures2-nd Joint Taiwan-Russian Symposium: "Nanophotonics and nanoelectronics: materials and physics", October, 17-21, Taichung, Taiwan
A. V. Dvurechenskii, A. F. Zinovieva, A.I. YakimovGe/Si quantum dot nanostructures for spintronics3-rd Nanotechnology International Forum, November, 1-3, Moscow, Russia
À.Â.Äâóðå÷åíñêèéÏîëóïðîâîäíèêîâûå ôîòîäåòåêòîðû êîñìè÷åñêîãî è íàçåìíîãî áàçèðîâàíèÿ14-ÿ ìåæäóíàðîäíàÿ êîíôåðåíöèÿ, ïîñâÿùåííàÿ ïàìÿòè ãåíåðàëüíîãî êîíñòðóêòîðà ðàêåòíî-êîñìè÷åñêèõ ñèñòåì àê. Ì.Ô.Ðåøåòíåâà, 10-12 íîÿáðÿ 2010, Êðàñíîÿðñê
À.Â.Äâóðå÷åíñêèéÏåðñïåêòèâíûå ìàòåðèàëû è òåõíîëîãèè ìèêðî- è íàíîýëåêòðîíèêè14-ÿ ìåæäóíàðîäíàÿ êîíôåðåíöèÿ, ïîñâÿùåííàÿ ïàìÿòè ãåíåðàëüíîãî êîíñòðóêòîðà ðàêåòíî-êîñìè÷åñêèõ ñèñòåì àê. Ì.Ô.Ðåøåòíåâà, 10-12 íîÿáðÿ 2010, Êðàñíîÿðñê
À.Â.Äâóðå÷åíñêèéÃåòåðîñòðóêòóðû Ge/Si ñ êâàíòîâûìè òî÷êàìè: ðîñò è èññëåäîâàíèå ñâîéñòâ ñ èñïîëüçîâàíèåì ðàäèàöèîííûõ ìåòîäîâÑåññèÿ Íàó÷íîãî Ñîâåòà ÐÀÍ ïî ïðîáëåìå "Ðàäèàöèîííàÿ ôèçèêà òâåðäîãî òåëà". 22-27 íîÿáðÿ 2010, Ñ.-Ïåòåðáóðãñêèé Àêàäåìè÷åñêèé óíèâåðñèòåò, Ñ.-Ïåòåðáóðã
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CONFERENCE PROCEEDINGS

AuthorsArticle Conference File
P.L. Novikov, Zh.V. Smagina, V.A. Zinoviev, D.Yu. Vlasov, A.V. Dvurechenskii, D.A. Nasimov, A.S. Deryabin and A.S. KozhukhovNucleation of Ge nanoislands on pre-patterned Si substrates18th International Symposium "Nanostructures: Physics and technology", June 21–26, 2010, Saint-Petersburg, Russia, 177-178
P.A. Kuchinskaya, Zh.V. Smagina, V.A. Zinoviev, A.V. DvurechenskiiNucleation of Ge nanoislands on Si by pulsed ion irradiationXI International conference and seminar EDM 2010, June 30- July 4, Erlagol, p. 3-5
A. S. Lyubin, A. F. Zinovieva, A. V. DvurechenskiiElectron paramagnetic resonance of electron states in two-dimensional quantum dot arraysInternational XI International conference and seminar EDM 2010, June 30- July 4, Erlagol, p. 6-8
N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, I.V. Osinnyukh, A.I. Nikiforov, D. Gruetzmacher, J.Moers and J. GerharzPhoto-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots18th International Symposium "Nanostructures: Physics and technology", June 21–26, 2010, Saint-Petersburg, Russia, p.255-256
J. Moers, N.P. Stepina, J. Gerharz, E.S. Koptev, A.I. Nikiforov, A.V. Dvurechenskii, D. Gr?tzmacherSingle photon detection by means of SiGe-quantum dot arraysProceeding of 8th International Conference on Advanced Semiconductors Devices and Microsystems ASDAM, 2010, pp. 9-12, ISBN: 978-1-4244-8572-7, IEEE Catalog Number: CPF10469-PRT, Editors J. Breza, D. Donoval, E. Vavrinsky
N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, A.I. Nikiforov, and A.G. PogosovTwo-parameter scaling in 2D transport through a Ge/Si quantum dot array AIP Conference Proceeding Series30th International Conference on the Physics of Semiconductors, July 25-30, 2010, Coex, Seoul, Korea
J.V. Smagina, V. A. Zinoviev, P. L. Novikov, V. A. Armbrister, E. S. Koptev, A. V. DvurechenskiiGe/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxyThe 6th International Conf. on Quantum Dot (QD 2010), 26–30 April 2010, Nottingham, UK, p. 343
Ï.Ë. Íîâèêîâ, Æ.Â. Ñìàãèíà, Ä.Þ. Âëàñîâ, À.Â. Äâóðå÷åíñêèé, À.Ñ. Äåðÿáèí, À.Ñ. ÊîæóõîâÇàðîæäåíèå îñòðîâêîâ ãåðìàíèÿ íà ñòðóêòóðèðîâàííûõ ïîäëîæêàõ êðåìíèÿVII Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ "ÊÐÅÌÍÈÉ-2010", 6-9 èþëÿ 2010, Íèæíèé Íîâãîðîä, ñòð. 196
Æ.Â. Ñìàãèíà, Ï.Ë. Íîâèêîâ, Â.À. Çèíîâüåâ, Â.À. Àðìáðèñòåð, À.Â. Íåíàøåâ, Ñ.À. Òèéñ, À.Â. Äâóðå÷åíñêèéÍàíîîñòðîâêè Ge íà Si, ôîðìèðóåìûå ïðè íèçêîýíåðãåòè÷åñêîì èîííîì âîçäåéñòâèèVII Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ "ÊÐÅÌÍÈÉ-2010", 6-9 èþëÿ 2010, Íèæíèé Íîâãîðîä, ñòð. 166
P.L. Novikov, J.V. Smagina, D.Yu. Vlasov, A.S. Deryabin, A.S. Kozhukhov, A.F. Zinovieva, N.P. Stepina, A.V. DvurechenskiiGrowth of three-dimensional Ge nanoislands on patterned Si substrates30th International Conference on the Physics of Semiconductors (COEX), July 25-30, 2010, Seoul, Korea, P2-019
J.V. Smagina, P.L. Novikov, V.A. Armbrister, A.F. Zinovieva, A.V. Nenashev, S.A. Teys, V.A. Zinoviev, A.V. DvurechenskiiMolecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation30th International Conference on the Physics of Semiconductors (COEX), July 25-30, 2010, Seoul, Korea, P1-018
J.V. Smagina, P.L. Novikov, V.A. Zinoviev, V.A. Armbrister, S.A. Teys, A.V. DvurechenskiiStress-induced nucleation of nanoislands during the growth of Ge/Si heterostructures under low-energy ion irradiation18th International Conference of Ion Implantation Technology (IIT 2010), Jun 6-11, 2010, Kyoto, Japan, P2-45
J.V. Smagina, P.L. Novikov, V.A. Armbrister, V.A. Zinoviev, A.V. Nenashev, S.A. Teys, A.V. DvurechenskiiMolecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation16th International Conference on Molecular Beam Epitaxy (MBE 2010), 22 – 27 August, 2010, Berlin, Wed B1.1
P.L. Novikov, Zh.V. Smagina, V.A. Zinoviev, D.Yu. Vlasov, A.V. Dvurechenskii, D.A. Nasimov, A.S. Deryabin and A.S. KozhukhovSpace arrangement of Ge nanoislands during growth of Ge on pit-patterned Si substrates16th International Conference on Molecular Beam Epitaxy (MBE 2010), 22 - 27 August, 2010, Berlin, P1.44
Ã.Ä.Èâëåâ, Å.È. Ãàöêåâè÷, Â.À.Âîëîäèí, Æ.Â.Ñìàãèíà, À.Â.Äâóðå÷åíñêèéÍàíîñåêóíäíûé ëàçåðíûé îòæèã Ge/Si ãåòåðîñòðóêòóð ñ êâàíòîâûìè òî÷êàìèÌàòåðèàëû VIII Ìåæäóíàðîäíîé êîíôåðåíöèè "Ëàçåðíàÿ ôèçèêà è îïòè÷åñêèå òåõíîëîãèè (ËÔèOÒ'2010)", 27-30 ñåíòÿáðÿ, 2010 ã. Ìèíñê, Ðåñïóáëèêà Áåëàðóñü
E.I. Gatskevich, V.L. Malevich, G.D. Ivlev, V.A. Zinovyev, J.V. Smagina, V.A. Armbrister, A.V. DvurechenskiiLaser-stimulated thermodiffusion processes in Ge/Si heterostructures with quantum dotsXXV International Conference on Equations of Statefor Matter, March 1–6, 2010, Elbrus, Russia, p. 117
Zh.V. Smagina, V.A. Zinoviev, P.L. Novikov, V.A. Armbrister, A.V. DvurechenskiiNanoislands nucleation during growth of Ge/Si structures under low-energy ion irradiationX International Conference on Nanostructured Materials, September 13-17, 2010, Rome, T25-040
E.I.Gatskevich, V.I. Malevich, V.A. Zinoviev, A.V. DvurechenskiiMelting temperature of Ge nanoclusters in Si matrixAbstract Book of International conference "Fundamentals of Laser Assisted Micro- and Nanotechnologies", July 5-6, 2010, St. Petersburg - Pushkin, Russia, p.121
À.À. Áëîøêèí, À.È. ßêèìîâ, À.Â. Äâóðå÷åíñêèéÄâóõ÷àñòè÷íûå äûðî÷íûå ñîñòîÿíèÿ â íàïðÿæåííûõ âåðòèêàëüíî-ñâÿçàííûõ êâàíòîâûõ òî÷êàõ Ge/SiXVI II Óðàëüñêàÿ ìåæäóíàðîäíàÿ çèìíÿÿ øêîëà ïî ôèçèêå ïîëóïðîâîäíèêîâ, 15-20 ôåâðàëÿ, 2010, Åêàòåðèíáóðã, ñ. 100
À.À. Áëîøêèí, À.È. ßêèìîâ, À.Â. Äâóðå÷åíñêèé, Â.Ï. Æóêîâ, Ì.Ï. ÔåäîðóêÑîáñòâåííûå ôóíêöèè è ñîáñòâåííûå çíà÷åíèÿ îïåðàòîðà ãàìèëüòîíèàíà â ñèñòåìàõ ñî ñïèí-îðáèòàëüíûì âçàèìîäåéñòâèåìXI Ðîññèéñêàÿ êîíôåðåíöèÿ ìîëîäûõ ó÷åíûõ ïî ìàòåìàòè÷åñêîìó ìîäåëèðîâàíèþ è èíôîðìàöèîííûì òåõíîëîãèÿì, 15-21 ìàðòà, 2010, Èðêóòñê, ñ.
A.I. Yakimov, A.I. Nikiforov, A.A. Bloshkin, A.V. DvurechenskiiElectroabsorption spectroscopy of Ge/Si quantum dots18th International Symposium "Nanostructures: Physics and Technology", 21-26 June, 2010, St-Petersburg, p. 181
A.I. Yakimov, A.I. Nikiforov, A.V. DvurechenskiiElectromodulated absorption study of self-assembled Ge/Siquantum dots16th International Conference on Superlattices, Nanostructures and Nanodevices, 18-23 July, 2010, Beijing, p. 64
À.Â. Äâóðå÷åíñêèé, À.Â.Íåíàøåâ, À.Ô.Çèíîâüåâà, À.Ñ. Ëþáèí, À.Þ.Ãîðíîâ, Ò.Ñ.ÇàðîäíþêÌîäåëèðîâàíèå êâàíòîâûõ ëîãè÷åñêèõ îïåðàöèé â íàíîñòðóêòóðàõ ñ êâàíòîâûìè òî÷êàìèXI Ðîññèéñêàÿ êîíôåðåíöèÿ ìîëîäûõ ó÷åíûõ ïî ìàòåìàòè÷åñêîìó ìîäåëèðîâàíèþ è èíôîðìàöèîííûì òåõíîëîãèÿì, 15-21 ìàðòà, 2010, Èðêóòñê, ñ.40
N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, A.I. Nikiforov and A.G. PogosovTwo parameter scaling in 2D transport through a Ge/Si quantum dot arrayAbstracts of 30th International Conference on the Physics of Semiconductors, 2010, Seoul, Korea, p.810
N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, A.I. Nikiforov, D. Gruetzmacher, J.Moers and J. GerharzPhoto-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dotsAbstract on 18 Int. Conf. on Quantum Dots, May, 2010, UK, Notingem, ð. 210
J. Moers, N. P. Stepina, J. Gerharz, E.S. Koptev, A.I. Nikiforov, A.V. Dvurechenskii, D. Gr?tzmacherSingle photon detection by means of SiGe-quantum dot arraysAbstract of 8th International Conference on Advanced Semiconductors Devices and Microsystems ASDAM 2010, Smolenice, Slovakia
A.F. Zinovieva, A. V. Nenashev, A. V. DvurechenskiiAnisotropic exchange interaction in the structures with Ge/Si quantum dots18th Int. Symp. "Nanostructures: Physics and Technology", June 21-26, 2010, St. Petersburg, Russia, pp. 191-192
A.F. Zinovieva, A.S. Lyubin, N.P. Stepina, E.S. Koptev, A.I. Nikiforov, A.V. Dvurechenskii, N.A. Sobolev and M.C. CarmoSpin dynamics in two-dimensional arrays of quantum dots with different shapesThe 6th International Conf. on Quantum Dot (QD 2010), 26–30 April 2010, Nottingham, UK, p.277
A.V. Nenashev, A.F. Zinovieva, E.S. Koptev, A.V. DvurechenskiiVariational method of energy level calculation for quantum dots with a pyramidal shapeThe 6th International Conf. on Quantum Dot (QD 2010), 26–30 April 2010, Nottingham, UK, p.402
A.V. Dvurechenskii, A.I.YakimovPromising systems for optical interconnects19-th Intern. Conf. on Materials for Advanced Metallization, March 8-11, Mechelen, Belgium
À.Â.Äâóðå÷åíñêèé, À.È.ßêèìîâ, À.À.ÁëîøêèíÔèçèêà íàïðÿæåííûõ êðåìíèåâûõ íàíîñòðóêòóð ñ êâàíòîâûìè òî÷êàìè: óïðàâëåíèå ïðîöåññîì ðîñòà è ýëåêòðîííûå ñâîéñòâà7-ÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ ïî àêòóàëüíûì ïðîáëåìàì ôèçèêè, ìàòåðèàëîâåäåíèÿ, òåõíîëîãèè è äèàãíîñòèêè êðåìíèÿ, íàíîìåòðîâûõ ñòðóêòóð è ïðèáîðîâ íà åãî îñíîâå. Êðåìíèé-2010. 6-9 èþëÿ 2020, Íèæíèé Íîâãîðîä
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