DEVICE DEVELOPMENTS

Photodetector elements (PDs) for the wavelength range of l =1,3-1,55 µ.

Aim: building-in (inclusion) in the complex of photon components of fiber-optical communication lines, including that based on one uniform silicon chip. Description parameters: wavelength range — 1.3-1.55 µm, quantum efficiency — to 21% functioning t — room temperature. Technological bases: Ge/Si heterostructures with quantum dots MBE.

Field transistor on Ge/Si structures with quantum dots:
automatic installation of MBE to synthesize multilayer semiconductor structures	Ge nanoclusters in Si, Ge islands density Ge 3x1011 cm-2 lateral size 10-30 nm	The technology to obtain Ge quantum dots arrays in Si was developed. A nanotransistor framework on the structures with Ge quantum dots in Si was created.

Framework of the field transistor with Ge QDs.
		Application: new quantum electron and optoelectron devices functioning at room temperature (electrometers, memory elements),. element base of the XXI century's computing devices of higher rapidity.