LABORATORY OF NON-EQUILIBRIUM SEMICONDUCTOR SYSTEMS

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2011 Articles | Invited reports | Conference proceedings

ARTICLES

Authors Article Published File
A. V. Nenashev, S. D. Baranovskii, M. Wiemer, F. Jansson, R. Osterbacka, A. V. Dvurechenskii, and F. GebhardTheory of exciton dissociation at the interface between a conjugated polymer and an electron acceptorPhys. Rev. B, 2011, 84, 035210
P.L. Novikov, J.V. Smagina, D.Yu. Vlasov, A.S. Deryabin, A.S. Kozhukhov, A.V. Dvurechenskii Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substratesJournal of Crystal Growth, 2011, v. 323, iss. 1, p. 198-200
Zh.V. Smagina, P.L. Novikov, V.A. Zinovyev, V.A. Armbrister, S.A. Teys, A.V. DvurechenskiiMolecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiationJournal of Crystal Growth, 2011, v. 323, iss. 1, p. 244-246
A. Yakimov, A. Nikiforov, A. Bloshkin, A. DvurechenskiiElectromodulated reflectance study of self-assembled Ge/Si quantum dotsNanoscale Research Letters, 2011, 6, ¹ 1, 208
A.I. Yakimov, A.I. Nikiforov, V.A. Timofeev, A.A. Bloshkin, V.V. Kirienko, A.V. DvurechenskiiMidinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35 layer Semicond. Sci. Technol., 2011, 26, 085018
A.I. Yakimov, A.I. Nikiforov, V.A. Timofeev, A.V. DvurechenskiiInfrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layerSemicond. Sci. Technol., 2011, 26, 125002
N. P. Stepina, E. S. Koptev, A. V. Dvurechenskii, A. I. Nikiforov, J. Gerharz, J. Moers, and D. GruetzmacherGiant mesoscopic photoconductance fluctuations in Ge/Si quantum dot systemApplied Physics Letters, 2011, v. 98, 142101
Ë. Ì. Ïëÿñîâà, È. Þ. Ìîëèíà, Í. Ï. Ñòåïèíà, À. Ô. Çèíîâüåâà, À. Â. Äâóðå÷åíñêèéÝôôåêòû ïðîñòðàíñòâåííîãî óïîðÿäî÷åíèÿ ìàññèâîâ êâàíòîâûõ òî÷åê ïî äàííûì ìàëîóãëîâîé ðåíòãåíîâñêîé äèôðàêòîìåòðèè ïðè âàðèàöèè ïàðàìåòðîâ ðîñòàÏîâåðõíîñòü. Ðåíòãåíîâñêèå, ñèíõðîòðîííûå è íåéòðîííûå èññëåäîâàíèÿ, 2011, ¹ 2, ñ. 21-26
À.È. ßêèìîâ, Â.À. Òèìîôååâ, À.È. Íèêèôîðîâ, À.Â. Äâóðå÷åíñêèéÀíòèñâÿçûâàþùåå îñíîâíîå ñîñòîÿíèå äûðîê â äâîéíûõ âåðòèêàëüíî ñâÿçàííûõ êâàíòîâûõ òî÷êàõ Ge/SiÏèñüìà â ÆÝÒÔ, 2011, ò. 94, ¹ 10, ñ. 806-810
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INVITED REPORTS

AuthorsArticle Conference File
A.V. Dvurechenskii, A.I. YakimovElectron energy Spectrum and Optical Phenomena in Dense Array of Ge Quantum Dots in SiPhysics, Chemistry and Application of Nanostructures. Minsk Belarus, 2011. PP. 19-26
À. Â. Äâóðå÷åíñêèé, À.Ô.Çèíîâüåâà, À.Â.ÍåíàøåâÑïèíîâûå ñîñòîÿíèÿ ýëåêòðîíîâ â àíñàìáëå òóííåëüíî-ñâÿçàííûõ êâàíòîâûõ òî÷åêXV Âñåðîññèéñêèé Ñèìïîçèóì "Íàíîôèçèêà è íàíîýëåêòðîíèêà". 14-18 ìàðòà 2011, Íèæíèé Íîâãîðîä
A.V.Dvurechenskii, A.I.Yakimov, A.A.BloshkinOptical transitions in dense array of Ge quantum dots Si6th Joint Russia - China Workshop on Advanced Semiconductor Materials and Devices, 18 - 22 July 2011, Irkutsk, Russia, p. 24
A. V. Dvurechenskii, A. F. Zinovieva, A.V.NenashevSpins in low-dimensional quantum dot semiconductor nanostructuresInter. Conf. SPIN PHYSICS, SPIN CHEMISTRY AND SPIN TECHNOLOGY, Kazan, November 1-6, 2011, p. 3
A.V. Dvurechenskii, A.I. YakimovElectron energy Spectrum and Optical Phenomena in Dense Array of Ge Quantum Dots in SiIntern. Conf. Nanomeeting-2011, May, 24-27, Minsk, Belarus, pp. 19-26
A.V.Dvurechenskii, A.I.Yakimov, A.A.BloshkinMultiscale Modeling of Correlation Phenomena in Quantum Dot Strained Nanostructures and Design of Functional DevicesMRS Symposium YY: Computational Semiconductor Materials Science, San Francisco, April, 25-29, USA
À.Â. Äâóðå÷åíñêèé, À.Ô.Çèíîâüåâà, À.Â.ÍåíàøåâÑïèíîâûå ñîñòîÿíèÿ ýëåêòðîíîâ â àíñàìáëå òóííåëüíî-ñâÿçàííûõ êâàíòîâûõ òî÷åê ÍÀÍÎÔÈÇÈÊÀ È ÍÀÍÎÝËÅÊÒÐÎÍÈÊÀ 14-18 ìàðòà 2011, Íèæíèé Íîâãîðîä
A.V. DvurechenskiiDense Array of Ga/Si Quantum Dots: Physics and ApplicationPolish-Russian Academies of Sciences Seminar on Nanotechnologies, Warsaw, October 17-18, 2011
À.Â.Äâóðå÷åíñêèéÏîëóïðîâîäíèêîâûå ôîòîäåòåêòîðû è íàíîòåõíîëîãèèÌåæäóíàðîäíàÿ çèìíÿÿ øêîëà ïî ôèçèêå ïîëóïðîâîäíèêîâ 2011, Çåëåíîãîðñê, 25-28 ôåâðàëÿ 2011, ñ. 12-13
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CONFERENCE PROCEEDINGS

AuthorsArticle Conference File
Ìóäðûé À.Â., Øàêèíà Í.Â., Ìîôèäíàõàè Ô., Äâóðå÷åíñêèé À.Â., Ñìàãèíà Æ.Â., Íîâèêîâ Ï.ËÑòðóêòóðíûå è ëþìèíåñöåíòíûå ñâîéñòâà Si/Ge íàíîñòðóêòóð ñ êâàíòîâûìè òî÷êàìè GeÑáîðíèê äîêëàäîâ Ìåæäóíàðîäíîé íàó÷íîé êîíôåðåíöèè Àêòóàëüíûå "Ïðîáëåìû ôèçèêè òâåðäîãî òåëà", 18-21 îêòÿáðÿ, 2011, Ìèíñê, Áåëàðóñü, ò.1, ñòð. 159-161
P.L. Novikov, Zh.V. Smagina, A.V. DvurechenskiiFormation of Ge nanoislands on pit-patterned Si substrates studied by molecular dynamics simulations19th Int. Symp. "Nanostructures: Physics and Technology", June 20-25, 2011, Ekaterinburg, pð. 201-202
P. Kuchinskaya, V.A. Zinovyev, A.V. Nenashev, V.A. Armbrister, A.V. DvurechenskiiThe electronic structure of SiGe quantum rings19th Int. Symp. Nanostructures: Physics and Technology", June 20-25, 2011, Ekaterinburg, Russia, ð. 203
A. I. Yakimov, A. I. Nikiforov, V. A. Timofeev, A. A. Bloshkin, V. V. Kirienko and A. V. DvurechenskiiIntraband photocurrent spectroscopy of self-assembled Ge quantum dots on strained Si0.65Ge0.35 layer19th Int. Symp. Nanostructures: Physics and Technology", June 20-25, 2011, Ekaterinburg, Russia, ð.199
E.I.Gatskevich, V.L.Malevich, G.D.Ivlev, V.A.Zinovyev , A.V.DvurechenskiiModel calculation of the melting temperature of Ge nanoclusters in Si at pulsed laser heatingProcedings of XXV International Conference on Equations of State for Matter, March 1–6, 2011, Elbrus, Russia. Edited by Fortov V. E. et al., Chernogolovka , pp. 32-34
Ã.Ä. Èâëåâ, Å.È. Ãàöêåâè÷, Â.Ë. Ìàëåâè÷, À.Â. Äâóðå÷åíñêèé, Â.À. ÇèíîâüåâÒåìïåðàòóðà ïëàâëåíèÿ íàíîêëàñòåðîâ Ge â Si ïðè íàíîñåêóíäíîì ëàçåðíîì âîçäåéñòâèèÑáîðíèê: XXI Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ "ÐÀÄÈÀÖÈÎÍÍÀß ÔÈÇÈÊÀ Ò¨ÐÄÎÃÎ ÒÅËÀ", Ñåâàñòîïîëü, 22 àâãóñòà - 27 àâãóñòà, 2011, 8 ñòð
N.P. Stepina, E.S. Koptev, A.I. Nikiforov A.V. DvurechenskiiDetection of small photon flux in 2D array of tunnel-coupled Ge/Si quantum dotsPolish Russian Añademies of Scence Seminar on Nanotechnologies, Warsaw, October 17-18, 2011
N. P. Stepina, E. S. Koptev, A. V. Dvurechenskii, A. I. Nikiforov, A. G. PogosovTwo-parameter scaling in 2D transport through a Ge/Si quantum dot array30th International Conference on the Physics of Semiconductors, July 25-30 2010, Seoul, Korea, AIP Conference Proceeding Series
Å.È.Ãàöêåâè÷, Â.Ë.Ìàëåâè÷, Ã.Ä.Èâëåâ, Â.À.Çèíîâüåâ, Æ.Â.Ñìàãèíà, Â.À.Âîëîäèí, À.Â.Äâóðå÷åíñêèéÏëàâëåíèå è êðèñòàëëèçàöèÿ íàíîêëàñòåðîâ Ge, âñòðîåííûõ â Si ìàòðèöó, â óñëîâèÿõ èìïóëüñíîãî ëàçåðíîãî âîçäåéñòâèÿÐîññèéñêàÿ êîíôåðåíöèÿ è øêîëà ïî àêòóàëüíûì ïðîáëåìàì ïîëóïðîâîäíèêîâîé íàíîôîòîýëåêòðîíèêè "Ôîòîíèêà -2011", 22-26 àâãóñòà 2011, Íîâîñèáèðñê, ñòð. 37
Íîâèêîâ Ï.Ë., Ñìàãèíà Æ.Â., Äâóðå÷åíñêèé À.Â.Èññëåäîâàíèå ôîðìèðîâàíèÿ íàíîîñòðîâêîâ Ge íà ñòðóêòóðèðîâàííûõ ïîäëîæêàõ Si ìåòîäîì ìîëåêóëÿðíîé äèíàìèêèVII-ÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ è VII Øêîëà ìîëîäûõ ó÷åíûõ è ñïåöèàëèñòîâ "Êðåìíèé - 2011", 05-08 èþëÿ, 2011, Ìîñêâà, ñòð. 185
Ñìàãèíà Æ.Â., Íîâèêîâ Ï.Ë., Äâóðå÷åíñêèé À.Â.Ðîëü ìåæäîóçåëüíûõ àòîìîâ â çàðîæäåíèè íàíîîñòðîâêîâ Ge íà Si ïðè ýïèòàêñèè èç èîííî-ìîëåêóëÿðíûõ ïó÷êîâVII-ÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ è VII Øêîëà ìîëîäûõ ó÷åíûõ è ñïåöèàëèñòîâ "Êðåìíèé - 2011", 05-08 èþëÿ, 2011, Ìîñêâà, ñòð. 188
Zh.V. Smagima, P.L. Novikov, A.V. Nenashev, V.A. Zinoviev, A.V. DvurechenskiiGrowth of Ge/Si monolayer structures under low-energy ion irradiationInternational Conference on Materials for Advanced Technologies "ICMAT 2011", 26 Jun - 1 Jul, 2011, Suntec, Singapur, p.73(J11.2-4)
P. Novikov, Zh.V. Smagina, A.S. Deryabin, A.V. DvurechenskiiGrowth of Ge nanoislands on pit-patterned substratesInternational Conference on Materials for Advanced Technologies "ICMAT 2011", 26 Jun - 1 Jul, 2011, Suntec, Singapur, (J12.1-6) p.77
Æ.Â. Ñìàãèíà, Ï.Ë. Íîâèêîâ, À.Â. Íåíàøåâ, Ñ.À. Ðóäèí, Â.À. Çèíîâüåâ, Ñ.À. Òèéñ, À.Â. Ìóäðûé, À.Â. Äâóðå÷åíñêèéÏðîöåññû ôîðìèðîâàíèÿ êâàíòîâûõ òî÷åê â ìíîãîñëîéíûõ Ge/Si ñòðóêòóðàõ ïðè ýïèòàêñèè èç èîííî-ìîëåêóëÿðíûõ ïó÷êîâX Ðîññèéñêàÿ êîíôåðåíöèÿ ïî ôèçèêå ïîëóïðîâîäíèêîâ, 19-23 ñåíòÿáðÿ, 2011, Íèæíèé Íîâãîðîä, ñòð
Ï.Ë. Íîâèêîâ, Æ.Â. Ñìàãèíà, À.Â. Äâóðå÷åíñêèéÔîðìèðîâàíèå íàíîîñòðîâêîâ Ge íà ñòðóêòóðèðîâàííûõ ïîäëîæêàõ Si (ìîäåëèðîâàíèå ìåòîäîì ìîëåêóëÿðíîé äèíàìèêè)X Ðîññèéñêàÿ êîíôåðåíöèÿ ïî ôèçèêå ïîëóïðîâîäíèêîâ, 19-23 ñåíòÿáðÿ, 2011, Íèæíèé Íîâãîðîä, ñòð. 40
Å.È. Ãàöêåâè÷, Ã.Ä. Èâëåâ, À.Â. Äâóðå÷åíñêèé, Æ.Â. ÑìàãèíàËàçåðíî-èíäóöèðîâàííûå ôîòîëþìèíåñöåíöèÿ è èíôðàêðàñíîå èçëó÷åíèå Ge/Si ãåòåðîñòðóêòóð9-àÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ "Âçàèìîäåéñòâèå èçëó÷åíèé ñ òâåðäûì òåëîì", ñåíòÿáðü 20-22, 2011, ã. Ìèíñê, Áåëàðóñü, ñòð.35-36
Ï.À. Êó÷èíñêàÿ, Â.À. Çèíîâüåâ, À.Â. Íåíàøåâ, Â.À. Àðìáðèñòåð, À.Â. Äâóðå÷åíñêèéSiGe êâàíòîâûå êîëüöà íà ïîâåðõíîñòè Si(100)VII-ÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ è VII Øêîëà ìîëîäûõ ó÷åíûõ è ñïåöèàëèñòîâ "Êðåìíèé - 2011", 05-08 èþëÿ, 2011, Ìîñêâà, ñòð. 168
Â.À. Çèíîâüåâ, Ï.À. Êó÷èíñêàÿ, À.Â. Íåíàøåâ, À.Â. Äâóðå÷åíñêèé, Â.À. Âîëîäèí, C.W. LiuÊâàíòîâûå êîëüöà Ge/Si äëÿ ïðèåìíèêîâ ÈÊ è òåðàãåðöîâîãî èçëó÷åíèÿÐîññèéñêàÿ êîíôåðåíöèÿ è øêîëà ïî àêòóàëüíûì ïðîáëåìàì ïîëóïðîâîäíèêîâîé íàíîôîòîýëåêòðîíèêè "Ôîòîíèêà -2011", 22-26 àâãóñòà 2011, Íîâîñèáèðñê, ñòð. 33
Ï.À. Êó÷èíñêàÿ, Â.À. Çèíîâüåâ, À.Â. Íåíàøåâ, Â.À. Àðìáðèñòåð, Â.À. Âîëîäèí, À.Â. Äâóðå÷åíñêèéÑàìîîðãàíèçîâàííûå SiGe íàíîêîëüöà íà Si(100)X Ðîññèéñêàÿ êîíôåðåíöèÿ ïî ôèçèêå ïîëóïðîâîäíèêîâ, 19-23 ñåíòÿáðÿ, 2011, Íèæíèé Íîâãîðîä, ñòð. 26
À.È. ßêèìîâ, À.È. Íèêèôîðîâ, Â.À. Òèìîôååâ, À.À. Áëîøêèí, Â.Â. Êèðèåíêî, À.Â. Äâóðå÷åíñêèéÔîòîýëåêòðè÷åñêèå ÿâëåíèÿ â ñëîÿõ êâàíòîâûõ òî÷åê Ge, âñòðîåííûõ â êâàíòîâûå ÿìû SiGe â ìàòðèöå SiÐîññèéñêàÿ êîíôåðåíöèÿ è øêîëà ïî àêòóàëüíûì ïðîáëåìàì ïîëóïðîâîäíèêîâîé íàíîôîòîýëåêòðîíèêè "Ôîòîíèêà -2011", 22-26 àâãóñòà 2011, Íîâîñèáèðñê, ñòð 30
G.D. Ivlev, E.I.Gatskevich, Zh. V. Smagina, A.V. Dvurechenskii, A.I. NikiforovPhotoluminescence and infrared radiation of Ge/Si heterostructures with quantum dots at nanosecond laser exposure. Ôiçèêà i òåõëîãiÿ òîíêèõ ïëiâîê òà íàíîñèñòåìÌàòeðiàëû XIII Ìiæíàðîäíî¿ êîíôåðåíöi¿: Ó 2 ò. – Ò.2./ Çà çàã. ðåä. Ôðå¿êà Ä.Ì., May, 16-21, 2011, Èâàíî-Ôðàíêiâñüê: Âèäàâíèöòâî Ïðèêàðïàòñüêîãî íàöioíàëüíîãî óíiâåðñèòåòó iìåíi Âàñèëÿ Ñòåôàíèêà, ñ. 133
G.D. Ivlev , E.I. Gatskevich , V.L. Malevich , V.A. Zinovyev , A.V. DvurechenskiiMelting temperature of the nanocluster embedded in rigid matrixÔiçèêà i òåõëîãiÿ òîíêèõ ïëiâîê òà íàíîñèñòåì . Ìàòeðiàëû XIII Ìiæíàðîäíî¿ êîíôåðåíöi¿: Ó 2 ò. - Ò.2./ Çà çàã. ðåä. Ôðå¿êà Ä.Ì., May, 16-21, 2011, Èâàíî-Ôðàíêiâñüê: Âèäàâíèöòâî Ïðèêàðïàòñüêîãî íàöioíàëüíîãî óíiâåðñèòåòó iìåíi Âàñèëÿ Ñòåôàíèêà, ñ. 132
À.Ñ. Ëþáèí, À.Ô. Çèíîâüåâà, À.Â. Äâóðå÷åíñêèéÃåòåðîñòðóêòóðû Si/Ge ñ êâàíòîâûìè òî÷êàìè SiVII-ÿ Ìåæäóíàðîäíàÿ êîíôåðåíöèÿ è VII Øêîëà ìîëîäûõ ó÷åíûõ è ñïåöèàëèñòîâ "Êðåìíèé - 2011", 05-08 èþëÿ, 2011, Ìîñêâà, ñòð. 171
N.P. Stepina, E.S. Koptev, A.G. Pogosov, A.V. Nenashev, A.V. Dvurechenskii, A.I. NikiforovMagnetoresistance in two-dimensional array of Ge/Si quantum dotsAbstracts of 14th International Conference on Transport in Interacting and Disordered systems, September 5-8, 2011, Acre Israel http://physionet.ph.biu.ac.il/~TIDS14/program.htm
N.P. Stepina, E.S. Koptev, J.Moers, J. Gerharz. A.I. Nikiforov A.V. Dvurechenskii, D. GruetzmacherSingle photon detection in mesoscopic array of Si/Ge-quantum dotsAbstract on 6 Int. Conf. on Advanced materials, Singapore, June 2011, H7-3, p.40
Í.Ï. Ñòåïèíà, Å.Ñ. Êîïòåâ, À.Â. Äâóðå÷åíñêèé, À.È. ÍèêèôîðîâÄåòåêòèðîâàíèå ñëàáûõ ïîòîêîâ ÈÊ-èçëó÷åíèÿ â ìåçîñêîïè÷åñêèõ ñòðóêòóðàõ ñ êâàíòîâûìè òî÷êàìèÐîññèéñêàÿ êîíôåðåíöèÿ è øêîëà ïî àêòóàëüíûì ïðîáëåìàì ïîëóïðîâîäíèêîâîé íàíîôîòîýëåêòðîíèêè "Ôîòîíèêà 2011", 22-26 àâãóñòà 2011, Íîâîñèáèðñê, ñòð.31
Í.Ï. Ñòåïèíà, Å.Ñ. Êîïòåâ, À.Â. Äâóðå÷åíñêèé, À.È. Íèêèôîðîâ, Äæ. Ãåðõàðäö, Þ. Ìîéåñ, Ä. ÃðþöìàõåðÌåçîñêîïè÷åñêèå ôëóêòóàöèè ôîòîïðîâîäèìîñòè â ìàññèâå êâàíòîâûõ òî÷åê Ge/SiX Ðîññèéñêàÿ êîíôåðåíöèÿ ïî ôèçèêå ïîëóïðîâîäíèêîâ. Íèæíèé Íîâãîðîä. 19-23 ñåíòÿáðÿ 2011, ñòð.104
A. Lyubin, A. Zinovieva, A. DvurechenckiiSpin properties of electron in two dimensional quantum dot arraysSpin physics, spin chemistry, and spin technology, abstracts of the international conference, November 1-5, 2011, Kazan, p. 200
A.A.Bloshkin, A.I. Yakimov, A. V, DvurechenskiiSinglet-triplet splitting and entanglement of two holes in double Ge/Si quantum dotsSpin physics, spin chemistry, and spin technology, abstracts of the international conference, November 1-5, 2011, Kazan, p. 75
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