ПУБЛИКАЦИИ

1994

1. A.I.Yakimov, N.P.Stepina, A.V.Dvurechenskii. Inelastic resonant tunneling in amorphous silicon microstructures. Phys. Lett. A, 1994, v.194, Iss.1-2, p.133-136.
2. A.I.Yakimov, V.A.Markov, A.V.Dvurechenskii, O.P.Pchelyakov. Conductance oscillations in Ge/Si heterosrtuctures containing quantum dots. J.Phys.: Condens. Matter, 1994, v.6, Iss.13, p.2573-2582.
3. V.Yu.Balandin, L.N.Aleksandrov, A.V.Dvurechenskii, O.A.Kulyasova. Interference Effects at Laser Pulse Heating of Multilayer Structures. Phys. Stat. Sol. (a), 1994, v.142, Iss.1, p.99-105.
4. V.A.Zinovyev, L.N.Aleksandrov, A.V.Dvurechenskii, K.-H.Heining, D.Stock. Modelling of layer-by-layer sputtering of Si(111) surfaces under irradiation with low-energy ions. Thin Solid Films, 1994, v.241, Iss.1-2, p.167-170.
5. A.I.Yakimov, N.P.Stepina, A.V.Dvurechenskii. Hopping conduction and resonant tunneling in amorphous silicon microstructures. J.Phys.: Condens. Matter, 1994, v.6, Iss.13, p.2583-2594.
6. A.I.Yakimov, N.P.Stepina, A.V.Dvurechenskii. Incoherent mesoscopic phenomena in amorphous Si microstructures. Phys. Low-Dim. Structures, 1994, v.6, p.75-92.
7. K.-H.Heinig, D.Stock, H.Boettger, V.A.Zinovyev, A.V.Dvurechenskii, A.V.Aleksandrov. Formation of double- height Si(100) steps by sputtering with Xe ions – a computer simulation. In: Materials Synthesis and Processing using ion beams. Ed. by R.J.Culberton et. al., Pittsburgh, Material Research Society, 1994,v. 316, p.1035-1040.
8. L.N.Aleksandrov, R.V.Bochova, G.M.Kiselev and I.A.Entin. Study of the initial stage of film crystallization by Monte Carlo method. Gryst. Res. Technol. 29 (1994) 25-31.
9. Л.Н.Александров. Механические напряжения в многослойных структурах типа кремний на изоляторе. Микроэлектроника, 23 (1994) 76-82.
10. V.V.Suprunchik, A.V.Dvurechenskii, Yu.P.Stepantsov. Hopping in silicon layers with low impurity concentration - in Hopping and related phenomena 5, World Scientific, Singapore. New Jersey. London. Hong Kong.,1994, 357, p.51-54