Оппоненты
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Брудный Валентин Натанович, д.-ф.-м.н., профессор кафедры физики полупроводников, Федеральное государственное автономное образовательное учреждение высшего образования «Национальный исследовательский Томский государственный университет»
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Список публикаций по теме диссертации соискателя за последние 5 лет:
- A. G. Afonin, V. N. Brudnyi, P. A. Brudnyi, and L. E. Velikovskii. Properties of radiation changes in electrical properties of InAlN/GaN HEMT. // Russ. Physics J. V. 62(9), P. 1656 – 1662. (2020). DOI 10.1007/s11182-020-01888-w.
- V N Brudnyi, I V Kamenskaya and P A Brudnyi. Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb. // Semicond. Sci. and Technology. V. 36, P.086021 (6pp).(2020). doi: org/10.1088/13-616641/ab92cf.
- В.Н. Брудный, М.Д. Вилисова. Твердые растворы InxAl1-xN:проблемы стабильности состава. // Физика и Техника Полупроводников, Т.63(12), С.1733-1736. (2019). DOI: 10.21883/FTP.2019.12.48636.9239
- V N Brudnyi, V M Boiko, N G Kolin, A V Kosobutsky, A V Korulin, P A Brudnyi and V S Ermakov. Neutron irradiation-induced modification of electrical and structural properties of GaN. // Semicond. Sci. and Technology. V.33, 095011 (8 pp) (2018). doi: org/10.1088/13-616641/aad53b.
- V. Brudnyi, I. Prudaev, V. Oleinik, A. Marmaluk. Electron irradiation degradation of AlGaInP/GaAs light-emitting diodes.//Physica status solidi (a). V.215, P.1700445 (5 pp) (2018). DOI: 10.1002/pssa.201700445.
- V N Brudnyi, A.V. Kosobutskyi. Electronic properties of SiC polytypes: Charge neutralitylevel and interfacial barrier heights. Superlattice and Microstructures/ V.111, P. 499 – 505 (2017). DOI:org/10.1016/j.spmi/2017.07.003.
- V.N. Brudny. Gallium nitride: charge neutrality level and interfaces. // Russ. Physics J. V.58(11), P. 1413 – 1418 (2016). DOI 10.1007/s11182-016-0691-1.
- S.A. Bereznaya, Z.V. Korotchenko, R.A. Redkin, S.Yu. Sarkisov, V.N. Brudnyi, A.V. Kosobutsky, V.V. Atuchin. Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfacesю // Infrared Physics and Technology. V.77, 199-103 (2016). doi.org./10.1016/j.infrared 2016.05.023
Жмерик Валентин Николаевич, д.ф-м.н., Ведущий научный сотрудник лаборатории оптики кристаллов и гетероструктур с экстремальной двумерностью,
Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук
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Список публикаций по теме диссертации соискателя за последние 5 лет:
- V. Jmerik 2D-GaN/AlN Monolayer-Thick Quantum Wells in Encyclopedia of Applied Physics. © 2020, WILEY-VCH GmbH. http://dx.doi.org/10.1002/3527600434.eap853
- Jmerik, V.N., Nechaev, D.V., and Ivanov, S.V. Kinetics of Metal-Rich PA Molecular Beam Epitaxy of AlGaN Heterostructures for Mid-UV Photonics, In: Molecular Beam Epitaxy: From Research to Mass Production, 2e (ed. M. Henini), (2018), 135-179. Elsevier Inc. http://dx.doi.org/10.1016/B978-0-12-812136-8.00008-6
- V. N. Jmerik, D. V. Nechaev, A.A. Toropov, E. A. Evropeitsev, V. I. Kozlovsky, V. P. Martovitsky, S. Rouvimov, and S. V. Ivanov, High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3, Appl. Phys. Express 11, 091003 (2018). https://doi.ore/10.7567/APEX. 11.091003
- О. A. Koshelev, D.V. Nechaev, P.N. Brunkov, S.V. Ivanov, V. N. Jmerik, Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy, 2020 Semicond. Sci. Technol. 36, 035007 (2021). https://doi.org/10.1088/1361-6641/abd63d
- D.V. Nechaev, O.A. Koshelev, V.V. Ratnikov, P.N. Brunkov, A.V. Myasoedov, A. A. Sitnikova, S.V. Ivanov, V.N. Jmerik, Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/ c-Al2O3 templates grown by PA MBE, Superlattices and Microstructures 138, 106368 (2020),8pp. https://doi.org/10.1016/j.spmi.2019.106368
- A. A. Toropov, Е. A. Evropeitsev, М. О. Nestoklon, D.S. Smirnov, Т. V. Shubina, V. Kh. Kaibyshev, G. V. Budkin, V. N. Jmerik, D. V. Nechaev, S. Rouvimov, S. V. Ivanov, and B. Gil Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet, Nano Lett. 20(1), 158-165 (2020). https://doi.org/10.1021/acs.nanolett.9b03517
- Y. Wang, X. Rong, S. Ivanov, V. Jmerik, et al., Deep Ultraviolet Light Source from Ultrathin GaN/AIN MQW Structures with Output Power Over 2 Watt, Adv. Optical Mater. 1801763 (2019) https://doi.org/10.1002/adom.201801763
- N. Atanov, Y. Davydov, V. Glagolev, V. Tereshchenko, D. Nechaev, S. Ivanov, V. Jmerik, A Photomultiplier with an AlGaN Photocathode and Microchannel Plates for BaF2 Scintillator Detectors in Particle Physics, IEEE Transactions on Nuclear Science, V. 67, Issue: 7, July 2020, pp.1760 - 1764. https://doi.org/10.1109/TNS.2020.2998433
- Y. Robin, S. Y. Bae, Т. V. Shubina, M. Pristovsek, E. A. Evropeitsev, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, V. N. Jmerik, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano, Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes, Scientific Reports (2018) 8:7311 https://doi.org/10.1038/s41598-018-25473-x
- V.N. Jmerik, N.V. Kuznetsova, D.V. Nechaev, T.V. Shubina, D.A. Kirilenko, S.I. Troshkov, V.Yu. Davydov, A.N. Smirnov, S.V. Ivanov, Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates, J. Crystal Growth 477, 207-211 (2017). https://doi.org/10.1016/j.jcrysgro.2017.05.014
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Ведущая организация
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Федеральное государственное бюджетное учреждение науки Физический институт им.П.Н. Лебедева Российской академии наук (ФИАН)
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Список публикаций по теме диссертации соискателя за последние 5 лет (10-15):
- K. Nagaraja, Yu.A. Mityagin, M.P. Telenkov, I.P. Kazakov, GaAs(1-x)Bix: a promising material for optoelectronics applications, Critical Review in Solid State and Material Sciences, 42, 239 (2016).
- I.A. Likhachev, I.N. Trunkin, V.I. Tsekhosh, G.V. Prutskov, I.A. Subbotin, A.V. Klekovkin, E.M. Pashaev, A.L. Vasiliev, I.P. Kazakov, Microstructure of QD-like clusters in GaAs/In(As,Bi) heterosystems, J. Mater. Res., 33, 2342 (2018).
- L.P. Avakyants, P.Y. Bokov, I.P. Kazakov, M.A. Bazalevsky, P.M. Deev, A.V. Chervyakov, Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates, Semiconductors, 52 ,849 (2018).
- A.A. Melnikov, K.N. Boldyrev, Y.G. Selivanov, V.P. Martovitskii,; S.V. Chekalin, E.A. Ryabov, Coherent phonons in a Bi2Se3 film generated by an intense single-cycle THz pulse,
Phys. Rev. B, 97, 21(2018).
- I.I. Zasavitskii, N.Y. Kovbasa, N.A. Raspopov, A.V. Lobintsov, Y.V. Kurnyavko, P.V. Gorlachuk, A.B. Krysa, A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 µm, Quant. Electron. 48, 472 (2018).
- S.O. Volosheniuk, Y.G. Selivanov, M.A. Bryzgalov, V.P. Martovitskii, A.Y. Kuntsevich, Effect of Sr doping on structure, morphology, and transport properties of Bi2Se3 epitaxial thin films, J. Appl. Phys., 125, 9 (2019).
- M.A. Ladugin, I.V. Yarotskaya, T.A. Bagaev, K.Y. Telegin, A.Y. Andreev, I.I. Zasavitskii, A.A. Padalitsa, Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE, Crystals, 9, 6 (2019).
- A.V. Suslov; A.B. Davydov, L.N. Oveshnikov, L.A. Morgun, K.I. Kugel, V.S. Zakhvalinskii, E.A. Pilyuk, A.V. Kochura, Observation of subkelvin superconductivity in Cd3As2 thin films,
Phys. Rev. B, 99, 9 (2019).
- S. Chusnutdinow, M. Szot, S. Schreyeck, M. Aleszkiewicz, I.V. Kucherenko, A.V. Muratov, V.A. Yakovlev, Ternary Pb1-x Cdx Se films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates, J.of Cryst. Growth, 507, 10 (2019).
- S.A. Savinov, K.K. Nagaraja, Y.A., Mityagin, P.A. Danilov, S.I. Kudryashov, A.A. Ionin, I.P. Kazakov, V.I. Tsekhosh, Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers, Optical Mater., 101, 1 (2020).
- E.V. Shornikova, D.R. Yakovlev, L. Biadala, S.A. Crooker, V.V. Belykh, M.V. Kochiev, A. Kuntzmann, M. Nasilowski, Negatively Charged Excitons in CdSe Nanoplatelets, Nano Lett., 20, 1370 ( 2020).
- V.V. Belykh, M.V. Kochiev, D.N. Sob'yanin, D.R. Yakovlev, M. Bayer, Anomalous magnetic suppression of spin relaxation in a two-dimensional electron gas in a GaAs/AlGaAs quantum well, Phys. Rev. B, 101, 23 (2020).
- N.K. Chumakov, I.A. Chernykh. A.B. Davydov, I.S. Ezubchenko, Y.V. Grishchenko, L.L. Lev, I.O. Maiboroda, L.A. Morgun, Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures, Semiconductors, 54, 1150 (2020).
- T.V. Yuryeva, S.A. Malykhin, A.A. Kudryavtsev, I.B. Afanasyev, I.F. Kadikova, V.A. Yuryev, CdZnSSe crystals synthesized in silicate glass: Structure, cathodoluminescence, band gap, discovery in historical glass, and possible applications in contemporary technology
Mater. Res. Bull., 123, 110704 (2020).
- A.Y. Kuntsevich, G.M. Minkov, A.A. Sherstobitov, Y.V. Tupikov, N.N. Mikhailov, S.A. Dvoretsky, Density of states measurements for the heavy subband of holes in HgTe quantum wells, Phys. Rev. B, 101, 8 (2020).
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