Academician of RAS A.V.Rzhanov

Corresponding Member of RAS K.K.Svitashev

The Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences (ISP SBRAS) was founded in 1964 originating from unification of the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics, Siberian Branch, USSR Academy of Sciences. The founder of ISP SBRAS was Anatoly Vasilyevich Rzhanov, Academician of RAS, and continuous Director of ISP SBRAS since 1964 to 1990. Later, since 1990 to 1998 ISP SBRAS was headed by Konstantin Konstantinovich Svitashev, Corresponding Member of RAS. And since 1998 Dr. Alexander Leonidovich Aseev is the Head of ISP SBRAS. Alexander Vasilyevich Latyshev - RAS corresponding member, doctor of physical-mathematical sciences - has been Director of A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, since 2013.

In 1990 the Institute became the leading institution in the Joint Institute of Semiconductor Physics (JISP) among the Institute of Semiconductor Physics (ISP), SB RAS and the Design Technological Institute of Applied Microelectronics (DTIAM), SB RAS. In 1996 the Institute of Sensor Microelectronics (ISME), SB RAS, Omsk was incorporated into JISP.

For the recent years the Institute of Semiconductor Physics, SB RAS is one of the leading scientific and research centers in Russia specialized in fundamental and applied researches in the fields of Semiconductor physics, Micro- and Nanoelectronics. 13 members of ISP SBRAS were rewarded with USSR State Premiums and State Prize of the Russian Federation.

Nowadays the Institute unites more than 1000 members including 214 scientific staffers: 2 Academician, 4 RAS Corresponding members, 42 Doc. phys.-math. sci. and 131 PhDs in phys.-math. sci. and oth.

The Institute has 3 buildings and has a total area of 35'735 sq. meters. The unique thermostatic building where all semiconductor structures' fabrication and research equipment for micro-, microphoto-. nano- and acoustoelectronics is concentrated.

SCIENTIFIC DEPARTMENTS

• Department of Growth and Structure of Semiconductor Materials
  Head of the Department: O.P.Pchelyakov, Professor, Doctor of phys.-math. sci.
  The Department involves:
  • Laboratory for Ellipsometry of Semiconductor Materials and Structures
    headed by S.V. Rykhlitsky, PhD in tech. sci.
  • Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A₃B₅ Compounds
    headed by A.I. Nikiforov, PhD in phys.-math. sci.
  • Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy
    headed by V.V. Preobrazhensky, PhD of phys.-math. sci.
• Department of Physics and Technology of Low-Dimensional Semiconductors, Micro - and Nanostructures
  Head of the Department: A.L. Aseev, Academician of RAS
  The Department involves:
  • Laboratory of Nanodiagnostics and Nanolithography
    headed by A.V. Latyshev, Academician of RAS;
  • Laboratory of Physics of Low-Dimensional Electron Systems.
    headed by Z.D. Kvon, Professor, Doctor of phys.-math. sci.
• Department of Infra-Red MCT-Based Optoelectronics
  headed by S.A. Dvoretsky, PhD in phys.-math. sci.
  The Department involves:
  • Laboratory of Epitaxial Technology from Molecular Beams of A₂B₆ compounds
    headed by M.V. Yakushev, Doctor of phys.-math. sci.
  • Laboratory for Physical-Technological Principles of Making A₂B₆-based devices
    headed by G.Yu. Sidorov, PhD in phys.-math. sci.
  • Group of A₂B₆-Based Semiconductor Devices Physics
    headed by V.V. Vasilyev, PhD of phys.-math. sci.
• Department of Thin-Film Structures for Micro- and Photoelectronics
  headed by I.G. Neizvestny, Professor, Corresponding member of RAS.
  The Department involves:
  • Laboratory of Physics and Technology of Heterostructures
    headed by A.E. Klimov, Doctor of phys.-math. sci.;
  • Team for Simulation of Electron and Technological Processes of Microelectronics
    headed by I.G. Neizvestny, Professor, Corresponding member of RAS
• Department of Physics and Engineering of Semiconductor Structures
  headed by V.N. Ovsyuk, Professor, Doctor of phys.-math. sci.
  The Department involves:
  • Laboratory of Kinetic Phenomena in Semiconductors
    Acting Head D.G. Esaev, PhD in phys.-math. sci.
  • Laboratory of Molecular Beam Epitaxy of A₃B₅ Semiconductor Compounds
    headed by A.I. Toropov, PhD in phys.-math. sci.

SCIENTIFIC LABORATORIES

• Laboratory of Theoretical Physics
  headed by V.M. Kovalev, PhD in phys.-math. sci.
• Computer Systems Laboratory
  Acting Head K.V. Pavsky, Doctor of tech. sci.
• Laboratory of Physical Chemistry of Semiconductor Surface and Semiconductor - Dielectric Systems
  headed by O.I. Semenova, PhD in chem. sci.
• Laboratory of Optic Materials and Structures
  headed by V.V. Atuchin, PhD in phys.-math. sci.
• Laboratory of Physics and Technology of Three-Dimensional Nanostructures
  headed by V.Ya.Prinz, Professor, Doctor of phys.-math. sci.
• Laboratory of Nonequilibrium Processes in Semiconductors
  headed by A.S. Terekhov, Professor, Doctor of phys.-math. sci.
• Laboratory of Silicon Material Science
  headed by V.P. Popov, Doctor of phys.-math. sci.
• Laboratory of Physical Principles for Integrated Microphotoelectronics
  Acting Head A.P. Kovchavtsev, Doctor of phys.-math. sci.
• Laboratory of Technology of Silicon Microelectronics
  headed by O.V. Naumova, Doctor of phys.-math. sci.
• Laboratory of Nonequilibrium Semiconductor Systems
  headed by A.V. Dvurechenskii, Professor, Doctor of phys.-math. sci., Corresponding member of RAS.
• Laboratory of Laser Spectroscopy and Laser Technologies
  headed by N.N. Rubtsova, Doctor of phys.-math. sci.
• Laboratory of Nonlinear Resonant Processes and Laser Diagnostics
  headed by I.I. Ryabtsev, Doctor of phys.-math. sci., Corresponding member of RAS.
• Laboratory of Power Gas Lasers
  headed by D.E. Zakrevsky, Doctor of phys.-math. sci.

DESIGN-AND-TECHNOLOGY INSTITUTE OF APPLIED MICROELECTRONICS (DTIAM),
ISP AFFILIATED OFFICE, NOVOSIBIRSK

• Scientific-Research Department for Photo-Chemical Technologies.
  Head of the Department, A.V.Gelfand
• Scientific-Research Department for Thermal Imaging and Television.
  Head of the Department, K.P.Shatunov.
• Department for Engineering of Optoelectronic Devices.
  Head of the Department, L.I. Shapor.
• Department for Electronic Systems.
  Head of the Department, D.L. Kravchenko.
• Department for Modeling of Optoelectronic Devices.
  Head of the Department, A.V.Golitsyn.
• Department of Applied Opto-Electronic Devices and Technologies.
  Head of the Department, I.I. Kremis.

STID - Science-and-Technical Information Department
SP - Sector for Printing
PPD - Production-and-Planning Department
MD - Maintenance Department
BR - Sector for Building and Repairing
ES ED - Engineering Department for Electronic System
EW - Experimental Workshop
MTPD - Material-Technical Provision Department

I.G. Neizvestny was born 26.11.1931 in Odessa. 1956 - graduated from the Elecromechanical Faculty of the Moscow Energy Institute on the speciality "Insulators and Semiconductors", then he was absorbed in scientific activities at the Physical Institute USSR AS (engineer-researcher) for the period 1956 - 1962. 1962 - was appointed Deputy Director of the Institute of Solids Physics and Semiconductor Electronics SB RAS, Novosibirsk (since 1964 - ISP SBRAS). 1964 - defended his PhD thesis in "Studying the origin of recombination centres of charge carriers on germanium surface"; 1980 - Doctoral thesis "Studying germanium-insulator interface borders". 1983 - became professor. 1990 - was elected Corresponding member of USSR AS on the department of informatics, computing devices and automation (speciality - "Element base of computing devices").

I.G. Neizvestny is an expert in semiconductor physics and physical bases of semiconductor devices. The sphere of his scientific concern belongs to physical processes on the interface border of semiconductor-insulator, radiation interaction with semiconductor heteropstructures, computer simulation of thin surface layers formation, quantummcryptography, surface-barrier biosensors.

1962 - 1973 and 1980 - 2004 I.G. Neizvestny was Deputy Director for Science, ISP SBRAS. 1973 - 1980 - head "Physics and Technology of germanium MIS Structures". Since 2004 - RAS Councilor, head of the department for "Thin-film structures for micro- and photoelectronics", ISP SBRAS.

I.G. Neizvestny is a member of RAS scientific Council for semiconductor physics, member of the integrated Council for physico-technical sciences SB RAS, Deputy Chief editor of "Microelectronics" magazine, member of editorial boards of journals "Surface, x-ray, synchrotron and neutron investigations", "Physics of low-dimensional structures", "Sensor electronics and microsystem technologies", co-ordinator of the SB RAS program "Fundamental bases of micro- and nanoelectronic solid devices". I.G. Neizvestny is Head of the affiliated chair "Semiconductor Devices and Microelectronics" of the Novosibirsk State technical University. He has been delivering many lectures in physical bases of micro- and nanoelectronics.

I.G. Neizvestny is the author and co-author of 170 scientific contributions including 7 monographs and 4 authorship certificates. Seven Doctoral and 15 PhD theses were defended under his supervision.

In 1995 Igor Georgievich Neizvestny was awarded the title "Laureate of RF State Premium in science and technics for his "Discovery, experimental and theoretical study of a new class of photosensitive semiconductor materials".

1971 - he was awarded the Order of the Red Banner of Labour.