STAFF MEMBERS

Daniil I. Sarypov Engineer-Researcher, Postgraduate Student Tel: +7 (383) 330-81-71 E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. RSCI Author ID: 1180285 RSCI SPIN-code: 3352-7080 ORCID: 0000-0003-1056-5235 Web of Science ResearcherID: JQI-5153-2023 Scopus Author ID: 57964154900 ResearchGate Profile: Daniil-Sarypov

Research Interests:

The area of scientific interests of D. I. Sarypov is connected with the experimental study of electron transport in semiconductor structures with reduced dimensionality, including in structures with enhanced electron-electron interaction. Of particular interest is the hydrodynamic description of electron transport, i.e. consideration of the collective motion of electrons as a flow of a viscous liquid. Such an analogy gives a clear physical picture of the phenomenon and allows promptly predicting the influence of interelectron interaction on the experiment.

Education:

• 2022 — Graduated with a Bachelor's degree in Physics, Physics Department, Novosibirsk State University.
• 2024 — Graduated with a Master's degree in Physics, Physics Department, Novosibirsk State University.
• 2018 – Present — postgraduate student of the Physics Department of Novosibirsk State University.

Professional Experience:

• 2021 – 2024: research practice at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.
• 2024 – Present: Engineer-Researcher at Lab. 24 at A.V. Rzhanov Institute of Semiconductor Physics, SB RAS.

Awards and Honors:

• Recipient of the A. V. Rzhanov personal scholarship for young scientists at the A. V. Rzhanov Institute of Semiconductor Physics (2024-2025).
• First-degree diploma for the best presentation at the School of Young Scientists "Current Problems of Semiconductor Nanosystems - 2024".
• First-degree diploma for the best presentation at the International Scientific Student Conference 2024.
• Second-degree diploma for the best presentation at the XXV All-Russian Youth Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics (2023).

Selected Publications:

1. D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev. Temperature Dependence of Electron Viscosity in Superballistic GaAs Point Contacts. Phys. Rev. Lett. 134, 026302 (2025).

2. D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov. Multiwell Potential in a Trench-Type Quantum Point Contact. JETP Lett. 116 (6), 360 – 366 (2022).

STAFF MEMBERS

Polina A. Kuchinskaya Senior Engineer Tel: +7 (383) 333-25-19 E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. RSCI Author ID: 1072052 RSCI SPIN-code: 4357-0802 ORCID: 0000-0002-1010-6736 Web of Science ResearcherID: J-6059-2018 Scopus Author ID: 36608285700 ResearchGate Profile: P-Kuchinskaya

Scientific activities:

The work involves studying the surface morphology of various materials using atomic force microscopy and conducting data analysis of the obtained results. Document management and administrative duties in the laboratory, including responsibilities as a materially responsible person.

Education:

• 2009 – Graduated from Novosibirsk State Technical University with a specialization in "Nanotechnology in Electronics."

• 2012 – Completed a postgraduate program at the Institute of Semiconductor Physics SB RAS in "Semiconductor Physics," presenting a dissertation."

Professional Experience:

Institute of Semiconductor Physics SB RAS, Novosibirsk: Since 2009 — Senior Engineer.

Selected publications:

1. V. A. Zinovyev, Zh. V. Smagina, A. F. Zinovieva, E. E. Rodyakina, A. V. Kacyuba, P. A. Kuchinskaya, K. N. Astankova, K. V. Baryshnikova, M. I. Petrov, M. S. Mikhailovskii, V. A. Verbus, M. V. Stepikhova, A. V. Novikov. High-Q states in the emission spectra of linear periodic chains of Si nanodisks with embedded GeSi quantum dots. Semiconductors 58 (5), 227 – 230 (2024).

2. Z. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, A. V. Nenashev, P. A. Kuchinskaya, A. V. Dvurechenskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, A. V. Peretokin, M. V. Shaleev, S. A. Gusev. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals. Semiconductors 54, 853 –859 (2020).

3. Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskiy, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. Semiconductors 52, 1150 – 1155 (2018).

4. V. A. Zinovyev, A. F. Zinovieva, P. A. Kuchinskaya, Zh. V. Smagina, V. A. Armbrister, A. V. Dvurechenskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi. Strain-induced improvement of photoluminescence from the groups of laterally ordered SiGe quantum dots. Applied Physics Letters 110, 102101 (2017).

STAFF MEMBERS

Vladimir A. Volodin Leading Researcher, Doctor of Science in Physics and Mathematics Tel: +7 (383) 333-24-70 E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it. RSCI Author ID: 36921 RSCI SPIN-code: 3804-1930 ORCID: 0000-0002-1022-0731 Web of Science ResearcherID: S-1809-2018 Scopus Author ID: 7003730532 ResearchGate Profile: Vladimir-Volodin

Research Interests:

Semiconductors, semiconductor nanostructures, defects, Raman scattering, luminescence, phonons, phonon-plasmon interaction, laser processing of nanostructures, transistors, solar cells, dielectrics, MOS structures, memristors.

Education:

• 1991 — Graduated from Novosibirsk State University with a specialization in Physics, Department of Semiconductor Physics. Diploma thesis: "Studies of Radiation and Thermally Stimulated Relaxation of Stresses in Silicon-on-Sapphire Structures."
• 1999 — Defended Candidate of Sciences dissertation, titled "Investigation of Semiconductor Nanostructures Based on Si and GaAs Using Raman Scattering."
• 2017 — Defended Doctor of Sciences dissertation, titled "Phonon Localization and Phonon-Plasmon Interaction in Semiconductor Nanostructures."

Professional Experience:

• 1991 – 1993 — Engineer-Researcher.
• 1993 – 1997 — Junior Researcher.
• 1997 – 2001 — Researcher.
• 2001 – 2021 — Senior Researcher.
• 2021 – Present — Leading Researcher.

Teaching Experience:

• 1997 – 2000 — Assistant Professor, Department of General Physics, Physics Department, Novosibirsk State University.
• 2000 – 2002 — Senior Lecturer, Department of General Physics, Physics Department, Novosibirsk State University.
• 2003 – 2018 — Associate Professor, Department of General Physics and Department of Automation of Physical and Technical Research, Physics Department, Novosibirsk State University.
• 2018 – Present — Professor, Novosibirsk State University (Courses: "Physical Foundations of Microelectronics," "Vibrational Spectroscopy," Seminars on Electrodynamics).
• 2005 — Received the title of Associate Professor in "Semiconductor Physics".

Under the supervision of V. A. Volodin, 17 bachelor's and 12 master's students (including five international students from China) from the Department of Physics, NSU, as well as 3 bachelor's and 2 master's students from NSTU, have graduated. V. A. Volodin supervises graduate students at the Department of Physics, NSU (including international students from China) and A. V. Rzhanov Institute of Semiconductor Physics, SB RAS. Under his supervision, five candidates of sciences have defended their dissertations, including one dissertation from China.

The research results of V. A. Volodin are presented in more than 300 publications (according to ISI Web of Science), with a total citation count exceeding 2800 and an h-index of 25.

Selected Publications:

1. M. D. Efremov, V. V. Bolotov, V. A. Volodin, L. I. Fedina, E. A. Lipatnikov. Excimer laser and RTA stimulation of solid phase nucleation and crystallization in amorphous silicon films on glass substrates. J. Phys.: Condens. Matter 8, 273 – 286 (1996).

2. V. A. Volodin, M. D. Efremov, V. A. Gritsenko, S. A. Kochubei. Raman study of silicon nanocrystals formed in SiNx films by excimer laser or thermal annealing. Appl. Phys. Lett. 73, 9, 1212 – 1214 (1998).

3. N. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. P. Soshnikov, V. A. Shchukin, V. M. Ustinov, A. Yu. Egorov, A. E. Zukov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. P. Semyagin, D. Bimberg, Zh. I. Alferov. Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surface. J. Electron. Mater. 30, 463 – 470 (2001).

4. E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov, A. K. Gutakovskii, V. A. Shvets, A. G. Borisov, M. D. Efremov. Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films. Semiconductors 39, 10, 1168 – 1175 (2005).

5. V. A. Volodin, M. D. Efremov, A. S. Deryabin, L. V. Sokolov. Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters. Semiconductors 40, 11, 1314 – 1320 (2006).

6. V. Chis, I. Yu. Sklyadneva, K. A. Kokh, V. A. Volodin, O. E. Tereshchenko, E. V. Chulkov. Vibrations in binary and ternary topological insulators: First-principles calculations and Raman spectroscopy measurements. Phys. Rev. B 86, 174304 (2012).

7. В. А. Володин, В. А. Сачков. Улучшенная модель локализации оптических фононов в нанокристаллах кремния. ЖЭТФ 143, 1, 100 – 108 (2013).

8. V. A. Volodin, D. I. Koshelev. Quantitative Analysis of Hydrogen in Amorphous Silicon Using Raman Scattering Spectroscopy. J. Raman Spectrosc. 44, 1760 – 1764 (2013).

9. V. A. Volodin, D. V. Marin, V. A. Sachkov, E. B. Gorokhov, H. Rinnert, M. Vergnat. Applying of Improved Phonon Confinement Model for Analysis of Raman Spectra of Germanium Nanocrystals. ЖЭТФ 145, 1, 77 – 83 (2014).

10. V. A. Volodin, M. P. Sinyukov, B. R. Semyagin, M. A. Putyato, V. V. Preobrazhenskiy. Experimental observation of interface-phonon-plasmon mode in n-GaAs/i-GaAs heterostructure. Solid State Communications 224, 21 – 23 (2015).

11. D. M. Zhigunov, G. N. Kamaev, P. K. Kashkarov, and V. A. Volodin. On Raman Scattering Cross Section Ratio of Crystalline and Microcrystalline to Amorphous Silicon. Appl. Phys. Lett. 113, 023101 (2018).

12. V. A. Volodin, V. Mortet, A. Taylor, Z. Remes, T. H. Stuchliková, J. Stuchlik. Raman scattering in boron doped nanocrystalline diamond films: manifestation of Fano interference and phonon confinement effect. Solid State Communications 276, 33 – 36 (2018).

13. V. A. Volodin, G. N. Kamaev, V. A. Gritsenko, A. A. Gismatulin, A. Chin, and M. Vergnat. Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films. Appl. Phys. Lett. 114, 233104 (2019).

14. Zhang Hao, S. A. Kochubei, A. A. Popov, V. A. Volodin. On Raman Scattering Cross Section Ratio of Amorphous to Nanocrystalline Germanium. Solid State Communications 313, 113897 (2020).

15. I. D. Yushkov, A. A. Gismatulin, I. P. Prosvirin, G. N. Kamaev, D. V. Marin, M. Vergnat. V. A. Volodin. Charge transport mechanism in GeOxSiO2 based MIS structures. Appl. Phys. Lett. 125, 242901 (2024).

STAFF MEMBERS

Alexander S. Lubin a post-graduate.

Education:

graduated from PD of NSU in 2009.