Уважаемые коллеги!

16 октября 2013 г. в 10:00 в конференцзале АК состоится Институтский семинар.

Prof. Maki Suemitsu
Heteroepitaxy of 3C-SiC on Si Substrate and
Formation of Epitaxial Graphene

Head of the solid state electronics group at the Research Institute of Electrical Communication,
Tohoku University, Sendai, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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Краткая аннотация доклада:


By forming a SiC thin film on Si substrates and by thermally converting the film’s top surface into graphene, an epitaxial graphene (EG) layer can be formed on Si substrates [1-7]. In this graphene-on-silicon (GOS) technology, heteroepitaxy of 3C-SiC thin films are firstly conducted on silicon substrates by using gas-source molecular beam epitaxy using monomethylsilane (MMS-GSMBE). With this growth method, high-quality 3C-SiC films can be grown at practical temperatures around 1000°C. The challenge from the low growth rate by GSMBE can be overcome by use of a two-step growth method [8]. While on-axis 3C-SiC films normally grow on Si substrates like 3C-SiC(111)/Si(111), (110)/(110) and (100)/(100), tuning of the growth conditions provides crystallographic rotation, i.e. 3C-SiC(111)/ Si(110) [9]. EG films are then formed by annealing the 3C-SiC films at ~1250°C in UHV, in which Si atoms sublimate from the surface. One of our surprises, and the benefits as well, is the fact that EG grows not only on the crystallographically coherent 3C-SiC(111) surface but also on the incoherent 3C-SiC(100) and (110) surfaces [4,6]. As for the EG/3C-SiC(111)/Si(111), it is shown that the growth proceeds in a quite similar manner as on the Si-terminated 6H-SiC(0001) surface. The inerfacial structure, the stacking, and the electronic structure of EG are shared by these to surfaces. This observation is consistent with the fact that the MMS-GSMBE-grown 3C-SiC(111)/Si(111) thin film is Si-terminated [5]. In sharp contrast, MMS-GSMBE- grown 3C-SiC(111)/Si(110) thin film is C-terminated. The EG on this surface shows essentially the same structural properties as on the C-terminated 6H-SiC(000-1) surface [7]. Similar behavior is observed on EG/3C-SiC(100)/Si(100) and EG/3C-SiC(110)/Si(110) as well, where no buffer layers form at the interface and the electronic structures are metallic [4,6]. Despite a lot of room for betterment, GOS technology has a high potential to introduce graphene into Si technology.


[1] Suemitsu et al., e.-J. Surf. Sci. Nanotech. 7 (2009) 311.
[2] Miyamoto et al. , e.-J. Surf. Sci. Nanotech. 7 (2009) 107.
[3] Fukidome et al., Jpn. J. Appl. Phys. 49 (2010) 01AH03.
[4] M. Suemitsu and H. Fukidome, J. Phys. D: Appl. Phys. 43 (2010) 374012
[5] R. Takahashi et al., Jpn. J. Appl. Phys. 50 (2011) 070103
[6] H. Fukidome,et al., J. Mater. Chem. 21, 17242 (2011).
[7] H. Fukidome, et al., Appl. Phys. Exp. 4, 115104 (2011).
[8] E. Saito, S. N. Filimonov and M. Suemitsu: Jpn. J. Appl. Phys. 50 010203(2011)
[9] A. Konno et al.,ECS Transactions 3, 449 (2006).