Лаборатория физики и технологии трёхмерных наноструктур

ПУБЛИКАЦИИ

1983

1. Prinz V.Ya., Rechkunov S.N., Influence of a strong electric field on the carrier capture by nonradiative deep-level centers. Fourth “Lund” International Conference on Deep Level Impurities in Semiconductors, 1983, p. 93-97.
2. А.с. 805873 (СССР). Способ контроля ловушек неосновных носителей заряда в полупроводниках. В.Я. Принц. Опубл. в БИ., № 30, 1983.
3. Prinz V.Ya., Rechkunov S.N., Influence of a strong electric field on the carrier capture by nonradiative deep-level centers in GaAs. Phys. Stat. Sol. (b), 1983, 118(1), p. 159-166.