| Electron and ion lithography: nanostructuring |
| A.L.Aseev, A.V.Latyshev
|
| ISP SB RAS, Novosibirsk
|
| Ion-stimulated molecular-beam epitaxy. Nanostructures impulse annealing.
|
| A.V.Dvurechensky
|
| ISP SB RAS, Novosibirsk
|
| Diamond structures for optoelectronics and quantum computers: ion implantation and pressed annealing.
|
| V.P.Popov, L.N.Safronov |
| ISP SB RAS Novosibirsk
|
| Reactions control methods with radiation defects in Si under ion implantation.
|
| V.N.Mordkovich
|
| ITAM, Chernogolovka
|
| Ion synthesis of nanosilicides.
|
| N.N.Gerasimenko
|
| MIEE, Zelenograd
|
| Defects, amorphization and diffusion under ion implantation.
|
| D.I.Tetelbaum
|
| NNSU, Nizhny Novgorod
|
|
Semiconductors proton beam-induced modification |
| V.V.Kozlovsky, SPSPU, Saint-Petersburg.
|
| Engineering of structural defects and luminiscent centers in Si light diodes implantation technology |
| N.A.Sobolev |
| PTI, Saint-Petersburg
|
| Ion implantation in CdHgTe |
| A.V.Voitsekhovsky |
| TSU, Tomsk
|
| Modification of metal nanocrystals with fast heavy ions |
| F.Dzhurabekova |
| University, Helsinki
|
| Focused ion beams for "diamond" nanostructures formation |
|
S.Rubanov |
| University, Melbourn
|
| Radiation Effects in Si-Ge Quantum Size Structures |
|
N.A.Sobolev |
| University of Aveiro, Portugal
|
| Hemmological aspects of ion implantation in minerals and their synthesized analogues |
| R.I.Khaibibullin, V.I.Nuzhdin, O.N.Lopatin, A.G.Nikolaev
|
| PTU,Kazan |
| Fast thermal processings in silicon-based microelectronics.
|
| R.M.Bayazitov
|
| KPTI, KazSC RAS, Kazan |
| Direct mapping of strain depth distributions with a nanometer spatial resolution in ion implanted Si using Dark-Field Electron Holohraphy |
| N.Cherkashin1, S.Reboh1, A.Lubk1, P.Pochet2, A.Claverie1 and M.J.Hÿtch1
|
1CEMES-CNRS, Toulouse, France
2CEA-INAC, Grenoble, France
|
|
Change of GaN properties under accelerated ion radiation |
|
P.A.Karasev |
|
Physical Electronics Chair, St.-P SPU, St.-P.
|
|
Ion sources and accelerators
for nuclear doping and boron neutron-trapping therapy |
|
A.A.Ivanov, A.V.Budakov, V.I.Davydenko |
|
INP SB RAS, Novosibirsk |
|
Primary state of damage in irradiated Si and GaN nanowires |
| K.Nordlund, R.Wei, E.Holmstram, F.Djurabekova and A.Kuronen |
| Department of Physics, University of Helsinki
|
| Evolution of non-metallic materials electron subsystem affected by hard radiation: electron properties of radiated semiconductors.
|
| V.N.Brudny |
| TSU, Tomsk
|
| Nanostructuring of titanium and ion implantation.
|
| Yu.P.Sharkeev
|
| IPAM SB RAS, Tomsk
|
| Ion synthesis of narrow-band semiconductors A3B5 nanocrystals in silicon and silicon dioxide
|
| F.F.Komarov, |
| SRIAPP, BSU, Minsk
|
| Formation of supernarrow p-n transitions in silicon by ion implantation.
|
| A.F.Vyatkin |
| IATM RAS, Chernogolovka
|
| Plasm-immersive ion implantation and its perspective applications in technologies of nanoelectronics and nanostructures.
|
| K.V.Rudenko, V.F.Lukichev, A.A.Orlikovsky
|
| PTIAS, Moscow
|
The list of invited reports will be replenished.
