IVth Russian Conference
PHYSICAL AND PHYSICO-CHEMICAL BASES OF ION IMPLANTATION
(with foreign scientists participation)
and International Youth Conference
RADIATION-THERMAL EFFECTS AND PROCESSES IN INORGANIC MATERIALS
23-26 October, 2012, Novosibirsk.
News
23.07.2012 The Preliminary Program is now available.
11.05.2012 Attention! The deadline for registration and abstract submission is extended to June 1, 2012.
28.02.2012 Welcome to visit our Conference site!
Contacts
Fax: +7(383)333-27-71
E-mail:
Irina V. Antonovna - Scientific Secretary of the Conference
Phone: +7(383)333-06-99
Svetlana A. Tychinskaya
Phone: +7(383)333-24-88
Address
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences.
13 ac. Lavrentyev aven., 600090, Novosibirsk, Russia.
INVITED REPORTS
Electron and ion lithography: nanostructuring
A.L.Aseev, A.V.Latyshev
ISP SB RAS, Novosibirsk
Ion-stimulated molecular-beam epitaxy. Nanostructures impulse annealing.
A.V.Dvurechensky
ISP SB RAS, Novosibirsk
Diamond structures for optoelectronics and quantum computers: ion implantation and pressed annealing.
V.P.Popov, L.N.Safronov
ISP SB RAS Novosibirsk
Reactions control methods with radiation defects in Si under ion implantation.
V.N.Mordkovich
ITAM, Chernogolovka
Ion synthesis of nanosilicides.
N.N.Gerasimenko
MIEE, Zelenograd
Defects, amorphization and diffusion under ion implantation.
D.I.Tetelbaum
NNSU, Nizhny Novgorod
Semiconductors proton beam-induced modification
V.V.Kozlovsky, SPSPU, Saint-Petersburg.
Engineering of structural defects and luminiscent centers in Si light diodes implantation technology
N.A.Sobolev
PTI, Saint-Petersburg
Ion implantation in CdHgTe
A.V.Voitsekhovsky
TSU, Tomsk
Modification of metal nanocrystals with fast heavy ions
F.Dzhurabekova
University, Helsinki
Focused ion beams for "diamond" nanostructures formation
S.Rubanov
University, Melbourn
Radiation Effects in Si-Ge Quantum Size Structures
N.A.Sobolev
University of Aveiro, Portugal
Hemmological aspects of ion implantation in minerals and their synthesized analogues
R.I.Khaibibullin, V.I.Nuzhdin, O.N.Lopatin, A.G.Nikolaev
PTU,Kazan
Fast thermal processings in silicon-based microelectronics.
R.M.Bayazitov
KPTI, KazSC RAS, Kazan
Direct mapping of strain depth distributions with a nanometer spatial resolution in ion implanted Si using Dark-Field Electron Holohraphy
N.Cherkashin1, S.Reboh1, A.Lubk1, P.Pochet2, A.Claverie1 and M.J.Hÿtch1
1CEMES-CNRS, Toulouse, France
2CEA-INAC, Grenoble, France
Change of GaN properties under accelerated ion radiation
P.A.Karasev
Physical Electronics Chair, St.-P SPU, St.-P.
Ion sources and accelerators for nuclear doping and boron neutron-trapping therapy
A.A.Ivanov, A.V.Budakov, V.I.Davydenko
INP SB RAS, Novosibirsk
Primary state of damage in irradiated Si and GaN nanowires
K.Nordlund, R.Wei, E.Holmstram, F.Djurabekova and A.Kuronen
Department of Physics, University of Helsinki
Evolution of non-metallic materials electron subsystem affected by hard radiation: electron properties of radiated semiconductors.
V.N.Brudny
TSU, Tomsk
Nanostructuring of titanium and ion implantation.
Yu.P.Sharkeev
IPAM SB RAS, Tomsk
Ion synthesis of narrow-band semiconductors A3B5 nanocrystals in silicon and silicon dioxide
F.F.Komarov,
SRIAPP, BSU, Minsk
Formation of supernarrow p-n transitions in silicon by ion implantation.
A.F.Vyatkin
IATM RAS, Chernogolovka
Plasm-immersive ion implantation and its perspective applications in technologies of nanoelectronics and nanostructures.
K.V.Rudenko, V.F.Lukichev, A.A.Orlikovsky
PTIAS, Moscow
The list of invited reports will be replenished.
Please, fill in the registration form and take part in our Conference
List of invited reports.
Conference organizers
Reports publication in 'N.I. Lobachevsky Nizhegorodsk Newsletter' journal.
 
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