IVth Russian Conference
PHYSICAL AND PHYSICO-CHEMICAL BASES OF ION IMPLANTATION
(with foreign scientists participation)
and International Youth Conference
RADIATION-THERMAL EFFECTS AND PROCESSES IN INORGANIC MATERIALS
23-26 October, 2012, Novosibirsk.
News
23.07.2012 The Preliminary Program is now available.
11.05.2012 Attention! The deadline for registration and abstract submission is extended to June 1, 2012.
28.02.2012 Welcome to visit our Conference site!
Contacts
Fax: +7(383)333-27-71
E-mail:
Irina V. Antonovna - Scientific Secretary of the Conference
Phone: +7(383)333-06-99
Svetlana A. Tychinskaya
Phone: +7(383)333-24-88
Address
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences.
13 ac. Lavrentyev aven., 600090, Novosibirsk, Russia.
ORGANIZERS

Siberian Branch of the RAS
Web-site: www.sbras.ru
A.V. Rzhanov Institute of Semiconductor Physics
Web-site: www.isp.nsc.ru
RAS Scientific Council on the problem of "Solid Radiation Physics"
RF Ministry of Education and Science
Web-site: mon.gov.ru
N.I. Lobachevsky Nizhegorodsk State University
Web-site: www.unn.ru
Novosibirsk State University
Web-site: www.nsu.ru
Novosibirsk State Technical University
Web-site: new.nstu.ru
Tomsk State University
Web-site: www.tsu.ru

Please, fill in the registration form and take part in our Conference
List of invited reports.
Conference organizers
Reports publication in 'N.I. Lobachevsky Nizhegorodsk Newsletter' journal.
 
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