IVth Russian Conference and the School of Young Scientists and Specialists

	IV^th Russian Conference
	PHYSICAL AND PHYSICO-CHEMICAL BASES OF ION IMPLANTATION (with foreign scientists participation)
	and International Youth Conference
	RADIATION-THERMAL EFFECTS AND PROCESSES IN INORGANIC MATERIALS
	23-26 October, 2012, Novosibirsk.

Personal section

News

23.07.2012 The Preliminary Program is now available.

11.05.2012 Attention! The deadline for registration and abstract submission is extended to June 1, 2012.

28.02.2012 Welcome to visit our Conference site!

Contacts

Fax: +7(383)333-27-71
E-mail:

Irina V. Antonovna - Scientific Secretary of the Conference
Phone: +7(383)333-06-99

Svetlana A. Tychinskaya
Phone: +7(383)333-24-88

Address

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences.
13 ac. Lavrentyev aven., 600090, Novosibirsk, Russia.

Siberian Branch of the RAS
Web-site: www.sbras.ru

A.V. Rzhanov Institute of Semiconductor Physics
Web-site: www.isp.nsc.ru

RAS Scientific Council on the problem of "Solid Radiation Physics"
Web-site: impo.imp.uran.ru

RF Ministry of Education and Science
Web-site: mon.gov.ru

N.I. Lobachevsky Nizhegorodsk State University
Web-site: www.unn.ru

Novosibirsk State University
Web-site: www.nsu.ru

Novosibirsk State Technical University
Web-site: new.nstu.ru

Tomsk State University
Web-site: www.tsu.ru

ONLINE registration

Please, fill in the registration form and take part in our Conference

Invited reports

List of invited reports.

Organizers

Conference organizers

Proceedings publication

Reports publication in 'N.I. Lobachevsky Nizhegorodsk Newsletter' journal.

Registration fee