Vladimir A. Zinovyev, researcher, PhD in phys.-math. sci.

Scientific activities:

• modelling of low-energy ions interaction with a solid surface,
• investigation of semiconductor heterostructures growth under ion radiation,
• studying elastic and plastic relaxation in nanodimensional systems.

Educational background:

• graduated from the Novosibirsk Electrotechnical Institute on the speciality "Physical electronics" (0641)

Empoyment activities:

• since 1989 — has been an ISP SB RAS staffer.
• In 2004 he defended his PhD thesis in "Processes on silicon surface under low-energy ion impact in MBE cnditions".
• Presently. he is a staffer of the laboratory of non-euilibrium semiconductor systems as a researcher.

Selected publications:

1. Zinovyev V.A., Aleksandrov L.N. and Dvurechenskii A.V., Heinig K.-H., Stock D. Modelling of layer-by-layer sputtering of Si(111) surfaces under irradiation with low-energy ions. – Thin Solid Films, 1994, v.241, p.167-170.
2. Двуреченский А.В., Зиновьев В.А., Марков В.А. Механизм структурных изменений поверхности кремния импульсным воздействием низкоэнергетическими ионами при эпитаксии из молекулярного пучка. – ЖЭТФ, 1998, т.67, с. 2055-2064.
3. Двуреченский А.В., Зиновьев В.А., Смагина Ж.В. Эффекты самоорганизации ансамбля наноостровков Ge при импульсном облучении низкоэнергетическими ионами в процессе гетероэпитаксии на Si.- Письма в ЖЭТФ, 2001, т. 74, c. 296-299
4. Dvurechenskii A.V., Smagina J.V., Groetzschel R., Zinovyev V.A., Armbrister V.A., Novikov P.L., Teys S.A., Gutakovskii A.K. Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy. - Surface and Coatings Technology, 2005, v.196, p. 25-29.
5. V. A. Zinovyev, G. Vastola, F. Montalenti, and Leo Miglio, Accurate and analytical strain mapping at the 3 surface of Ge/Si(001) islands by an improved flat-island approximation.- Surface Science, 2006, v. 600, p.4777-47842.
6. G. Capellini, M. De Seta, and F. Evangelisti, V. A. Zinovyev, G. Vastola, F. Montalenti, and Leo Miglio, Self-Ordering of a Ge Island Single Layer Induced by Si Overgrowth.- Phys. Rev. Lett. 2006, v.96, p. 106102
7. Marzegalli A., Zinovyev V.A., Montalenti F., Rastelli A., Stoffel M., Merdzhanova T., Schmidt O.G., Miglio L., Critical Shape and Size for Dislocation Nucleation in Si1-x Gex islands on Si(001). - Phys. Rev. Lett., 2007, v.99, p. 235505
8. Смагина Ж.В., Зиновьев В.А., Ненашев А.В., Двуреченский А.В., Армбристер В.А., Тийс С.А. Самоорганизация наноостровков германия при импульсном облучении пучком низкоэнергетических ионов в процессе гетероэпитаксии структур Ge/Si(100).- ЖЭТФ, 2008, т. 133, с. 593-604.
9. Gatti R., Marzegalli A., Zinovyev V. A., Montalenti F., Miglio L. Improved modeling of plastic relaxation onset in realistic SiGe islands on Si(001).- Phys. Rev. B, 2008, v.78, p.184104