Pavel L. Novikov, senior researcher, PhD in phys.-math. sci.

Scientific activities:

Simulation of thin semiconductor film growth.

Educational background:

• Graduated from PF NSU.

Empoyment activities:

• has been an ISP staffer since 1984

Selected publications:

1. П.Л. Новиков, Л.Н. Александров, А.В. Двуреченский, В.А. Зиновьев, Механизм эпитаксии кремния на пористых слоях кремния, Письма в ЖЭТФ, т.67, в.7 (1998) с. 512-517.
2. P. Novikov, K.-H. Heinig, A.N. Larsen, A. Dvurechenskii, Simulation of ion-irradiation stimulated Ge nanocluster formation in Gate Oxides containg GeO2, Nucl. Instr. Meth. In Phys. Res. B 191 (2002) 462-467.
3. P.L. Novikov, Yu.B. Bolkhovityanov, O.P. Pchelyakov, S.I. Romanov, L.V. Sokolov, Specific behaviour of stress relaxation in SexSi1-x films grown on porous silicon based mesa substrates: computer calculations, Semiconductor Science and Technology, v. 18 (2003) 39-44.
4. P.L. Novikov, A. Le Donne, S. Cereda, Leo Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Kanel, G. Isella, F. Montalenti, Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments, APPLIED PHYSICS LETTERS 94, 2009, p. 051904