Alexei V. Nenashev, senior researcher, PhD in phys.-math. sci.

Scientific activities:

Computer modelling of electron processes in semiconductor structures with quantum dots.

Educational background:

• physical faculty of NSU (graduated 1999),
• NSU post-graduate studies

Employment activities:

• since 1999 — to the present — engineer, researcher, senior researcher of ISP SB RAS,
• since 2003 — to the present — an NSU assistant.

Selected publications:

1. A. V. Dvurechenskii, A. V. Nenashev, A. I. Yakimov. Electronic structure of Ge/Si quantum dots // Nanotechnology, 2002, v. 13, No. 1, pp. 75-80.
2. A. F. Zinovieva, А. V. Nenashev, A. V. Dvurechenskii. Hole spin relaxation during the tunneling between coupled quantum dots // Phys. Rev. B, 2005, v. 71, 033310.
3. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Osterbacka, A. V. Dvurechenskii, and F. Gebhard. Hopping conduction in strong electric fields: Negative differential conductivity // Phys. Rev. B, 2008, v. 78, 165207.