XIth Conference and the Xth School of Young Scientists and Experts in Topical Problems of Silicon Physics, Material Science, Technology and Diagnostics, Silicon-Based Nanometer Structures and Devices
FSMIS A.V. Rzhanov Institute of Semiconductor Physics SB RAS
13 Lavrentyev aven., Novosibirsk, 630090, Russia
PROGRAM COMMITTEE
Conference Co-Chairmen
A.V. Latyshev
ISP SB RAS Novosibirsk
A.L. Aseev
ISP SB RAS Novosibirsk
Deputy Chairman
A.V. Dvurechenskii
ISP SB RAS, Novosibirsk
Scientific Secretary
I.Y. Tyschenko
ISP SB RAS, Novosibirsk
Members of the Program Committee
V.V. Aristov
IPMT, Chernogolovka
A.V. Brykin
OJSC “Roselectronica”
N.V. Volkov
IP SB RAS, Krasnoyarsk
A.F. Vyatkin
IPMT, Chernogolovka
E.I. Givarghizov
IC RAS, Moscow
B.G. Gribov
FSUE “SRIISGP”, Zelenograd
Yu.V. Gulyaev
IRE, Moscow
M.Ya Dashevsky
NRTU MISA, Moscow
E.P. Egorov
OJSC OJSC PCMP, Podolsk
P.A. Zaitsev
FSUE NRI NPA “Luch”, Podolsk
V.S. Zemskov
IMMS RAS, Moscow
V.I. Iisyuk
JSC NPSD with RCH, Novosibirsk
A.G. Kazansky
MSU, Moscow
V.V. Kveder
ISP RAS, Chernogolovka
Z.F. Krasilnik
IMP RAS, Nizhny Novgorod
G.Ya. Krasnikov
OJSC “RIME and Micron”
S.V. Kudryavtseva
OJSC RI “Isoterm”, Bryansk
V.F. Lukichev
PTIAS, Moscow
I.G. Neizvestny
ISP SB RAS, Novosibirsk
A.I. Neponyashchih
IGC SB RAS, Irkutsk
S.A. Nilitov
IRE RAS, Moscow
A.A. Orlikovsky
PTIAS, Moscow
Yu.N. Parkhomenko
JSC SRPIRMI, Moscow
V.P. Popov
ISP SB RAS, Novosibirsk
A.A. Saranin
IAMP FIB RAS, Vladivostok
A.N. Saurov
IMN RAS, Moscow
N.N. Sibeldin
PIAS, Moscow
N.A. Sobolev
A.F. Ioffe PTI, Saint-Petersburg
L.M. Sorokin
A.F. Ioffe PTI, Saint-Petersburg
D.S. Strebkov
ARIAE, Moscow
Address and contacts of the Program Committee:
FSMIS A.V. Rzhanov Institute of Semiconductor Physics SB RAS
13 Lavrentyev aven., 630090, Novosibirsk, Russia
Ida Yevgenyevna Tyschenko, Scientific Secretary of the Program Committee
Phone: +7(383)333-25-37
E-mail: