Russian Conference and the School of Young Scientists
on Topical Problems
of Semiconductor Photoelectronics
(with foreign participation)
11-15 September, 2017, Novosibirsk
Organizing Committee
13.09.2017 Photo report from the first day of the conference was published.
20.04.2017 List of invited reports was published.
19.04.2017 Abstracts submission was prolonged to 30.04.2017.
23.03.2017 Information about the registration fee was placed on the Conference site.
10.03.2017 Welcome to the Conference site “PHOTONICS 2017”!


A.V. KalameitsevISP SB RAS, Novosibirsk
V.P. GribkovISP SB RAS, Novosibirsk
A.G. MilekhinISP SB RAS, Novosibirsk
V.N. FedorininISP SB RAS Affiliated Branch DTIAM, Novosibirsk
Scientific Secretary
S.A. ArzhannikovaISP SB RAS, Novosibirsk
Members of the Organizing Committee
I.I. BeterovISP SB RAS, Novosibirsk
I.D. BurlakovJSC «NPO «Orion», Moscow
A.V. VoitsekhovskyTSU, Tomsk
V.A. GaislerNSTU, Novosibirsk
A.V. GlukhovOJSC NPSD with RCH, Novosibirsk
V.I. GuguchkinCJSC “Screen-Optical Systems”, Novosibirsk
S.A. DvoretskyISP SB RAS, Novosibirsk
P.T. DevyatkinISP SB RAS, Novosibirsk
I.V. IvoninTSU, Tomsk
V.Yu. KorchakSection of Applied Problems under RAS Presidium, Moscow
V.I. LoktionovOJSC “Cathode”, Novosibirsk
E.M. MaksimovMoscow
A.S. ParshinSSAU, Krasnoyarsk
A.G. PaulishISP SB RAS Affiliated Branch DTIAM, Novosibirsk
O.I. PotaturkinIAE SB RAS, Novosibirsk
V.A. RassokhinJSC “Schwabe Defense and Protection”, Novosibirsk
I.I. RyabtsevISP SB RAS, Novosibirsk
G.Yu. SidorovISP SB RAS, Novosibirsk
Yu.G. SidorovISP SB RAS, Novosibirsk
E.V. SkubnevskyISP SB RAS, Novosibirsk
M.V. YakushevISP SB RAS, Novosibirsk

Address of the Conference Organizing Committee:

Rzhanov Institute of Semiconductor Physics
630090, 13 Lavrentyev aven., Novosibirsk, Russia
Fax: +7(383) 3332771; e-mail:
Sophia A. Arzhannikova, phone: +7(383) 3332488;
Svetlana A. Tychinskaya, phone: +7(383) 3332488.

© ISP SB RAS, 2017.