Russian Conference and the School of Young Scientists
on Topical Problems
of Semiconductor Photoelectronics
(with foreign participation)
11-15 September, 2017, Novosibirsk
 
Program Committee
News
13.09.2017 Photo report from the first day of the conference was published.
20.04.2017 List of invited reports was published.
19.04.2017 Abstracts submission was prolonged to 30.04.2017.
23.03.2017 Information about the registration fee was placed on the Conference site.
10.03.2017 Welcome to the Conference site “PHOTONICS 2017”!
RUSSIAN

Program Committee

Conference Co-chairmen
A.V. Latyshev ISP SB RAS, Novosibirsk
A.L. Aseev SB RAS, Novosibirsk
Deputy-Chairmen
A.V. Dvurechenskii ISP SB RAS, Novosibirsk
M.P. Fedoruk NSU, Novosibirsk
Scientific Secretary
I.E. Tyschenko ISP SB RAS, Novosibirsk
Members of the Program Committee
Zh.I. Alferov St.-P. AU SE NTC
S.N. BezdidkoPAO "Krasnogoskii zavod im. S.A. Zvereva", Krasnogorsk
Yu.I. BelousovOJSC “Kometa” Corporation, Moscow
A.V. Brykin OJSC “Russian Electronics”, Moscow
N.V. Volkov IP SB RAS, Krasnoyarsk
Yu.V. GulyaevIRE RAS, Moscow
V.V. DotsenkoSC SPE “Micran”, Tomsk
A.E. ZhukovSt.-P. AU SE NTC
V.P. IvanovFSUE SPA SIAO, Kazan
E.L. Ivchenko A.F. Ioffe PTI RAS, St.-P.
V.M. IsaevMRIRMD, Mytishchi, Moscow region
V.I. Isyuk OJSC NPSD with RCH, Novosibirsk
P.S. KopyevA.F. Ioffe PTI
A.D. KrailyukSC “Radioconstruction Concern “Vega”, Moscow
Z.F. KrasilnikIMP RAS, Nizhny Novgorod
G.Ya. KrasnikovOJSC “RIME and Micron”, Zelenograd
I.V. KukushkinSPI RAS, Chernogolovka
G.N. KulipanovINP SB RAS, Novosibirsk
V.F. LukichevPTI RAS, Moscow
I.G. Neizvestny ISP SB RAS, Novosibirsk
S.A. Nikitov IRE RAS, Moscow
V.N. Ovsyuk ISP SB RAS, Novosibirsk
A.A. ReznevMoscow
A.N. SaurovIMN RAS, Moscow
N.N. SibeldinPI RAS, Moscow
A.S. SigovMIREA, Moscow
F.F. SizovISP NAS of Ukraine, Kiev
V.A. SoldatenkovOJSC “SPA Geophysics NV”
A.P. TarasovOJSC “S.A. Zverev Krasnogorsk Plant”, Krasnogorsk
A.S. Terekhov ISP SB RAS, Novosibirsk
V.M. UstinovA.F. Ioffe PTI
D.R. HohlovMSU, Moscow
S.V. HohlovMinpromtorg, Moscow
A.V. Chaplik ISP SB RAS, Novosibirsk
E.L. ChepurnovAO "NPO "Orion", Moscow
A.M. Shalagin IAE SB RAS, Novosibirsk
A.N. Shulunov JSC CRRTI, Moscow

Address and Contacts of the Program Committee:

Rzhanov Institute of Semiconductor Physics
630090, 13 Lavrentyev aven., Novosibirsk, Russia
Scientific Secretary of the Program Committee – Ida E. Tyschenko
Тел.: +7(383)333-25-37
E-mail:

 
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