PAO "Krasnogoskii zavod im. S.A. Zvereva", Krasnogorsk
Yu.I. Belousov
OJSC “Kometa” Corporation, Moscow
A.V. Brykin
OJSC “Russian Electronics”, Moscow
N.V. Volkov
IP SB RAS, Krasnoyarsk
Yu.V. Gulyaev
IRE RAS, Moscow
V.V. Dotsenko
SC SPE “Micran”, Tomsk
A.E. Zhukov
St.-P. AU SE NTC
V.P. Ivanov
FSUE SPA SIAO, Kazan
E.L. Ivchenko
A.F. Ioffe PTI RAS, St.-P.
V.M. Isaev
MRIRMD, Mytishchi, Moscow region
V.I. Isyuk
OJSC NPSD with RCH, Novosibirsk
P.S. Kopyev
A.F. Ioffe PTI
A.D. Krailyuk
SC “Radioconstruction Concern “Vega”, Moscow
Z.F. Krasilnik
IMP RAS, Nizhny Novgorod
G.Ya. Krasnikov
OJSC “RIME and Micron”, Zelenograd
I.V. Kukushkin
SPI RAS, Chernogolovka
G.N. Kulipanov
INP SB RAS, Novosibirsk
V.F. Lukichev
PTI RAS, Moscow
I.G. Neizvestny
ISP SB RAS, Novosibirsk
S.A. Nikitov
IRE RAS, Moscow
V.N. Ovsyuk
ISP SB RAS, Novosibirsk
A.A. Reznev
Moscow
A.N. Saurov
IMN RAS, Moscow
N.N. Sibeldin
PI RAS, Moscow
A.S. Sigov
MIREA, Moscow
F.F. Sizov
ISP NAS of Ukraine, Kiev
V.A. Soldatenkov
OJSC “SPA Geophysics NV”
A.P. Tarasov
OJSC “S.A. Zverev Krasnogorsk Plant”, Krasnogorsk
A.S. Terekhov
ISP SB RAS, Novosibirsk
V.M. Ustinov
A.F. Ioffe PTI
D.R. Hohlov
MSU, Moscow
S.V. Hohlov
Minpromtorg, Moscow
A.V. Chaplik
ISP SB RAS, Novosibirsk
E.L. Chepurnov
AO "NPO "Orion", Moscow
A.M. Shalagin
IAE SB RAS, Novosibirsk
A.N. Shulunov
JSC CRRTI, Moscow
Address and Contacts of the Program Committee:
Rzhanov Institute of Semiconductor Physics
630090, 13 Lavrentyev aven., Novosibirsk, Russia
Scientific Secretary of the Program Committee – Ida E. Tyschenko
Тел.: +7(383)333-25-37
E-mail: