December 7-9, 2021, Rzhanov Institute of Semiconductor Physics

Novosibirsk, 2021
Invited Speakers
News
08.11.2021 Welcome to the website of the School "Actual Problems of Semiconductor Nanosystems"!
RUSSIAN

Invited Speakers

Physicochemical foundations for creating functional semiconductor nanosystems
Prof. A. Latyshev
Two-dimensional metals of atomic thickness: synthesis and properties
Dr. A. Saranin
The study of electronic and spin structure of nanosystems by photoemission method with angular and spin resolution
Dr. O. Tereshenko
Semiconductor-dielectric multilayer nanostructures as a basis for neuromorphic, radio-photonic and quantum microcircuits
Dr. V. Popov
Quantitative measurement methods in electron microscopy
Dr. A. Chuvilin
Atomic structure of iron and chromium silicide nanocrystals in a silicon matrix
Dr. A. Gutakovsky
Structural processes in nanosystems using dynamic crystallography methods
Dr. A Avilov
Twinning in nano- and microcrystals
Dr. A. Vasiliev
Diffusion and atomic reactions on the surface, interfaces and in the bulk of the crystal
Dr. S. Kosolobov
Optimization of the Bridgman method for growing single crystals of layered chalcogenides
Dr. K. Koch
Visualization and quantitative measurements of strain fields in semiconductor heterostructures during HREM studies
Dr. A. Chuvilin
Monte-Carlo simulation of the formation of semiconductor nanostructures
Dr. N. Schwarz
Application of calculations based on the density functional theory to the study of semiconductor surfaces
Dr. R. Zhachuk
Excitons as Artificial Atoms: Fundamental Properties and Instrumental Applications
Dr. V. Kovalev
Structural-geometric and field control of the resistance of quantum nanosystems: experiments and models
Dr. V. Tkachenko
 
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