Electron and ion lithography: nanostructuring |
A.L.Aseev, A.V.Latyshev
|
ISP SB RAS, Novosibirsk
|
Ion-stimulated molecular-beam epitaxy. Nanostructures impulse annealing.
|
A.V.Dvurechensky
|
ISP SB RAS, Novosibirsk
|
Diamond structures for optoelectronics and quantum computers: ion implantation and pressed annealing.
|
V.P.Popov, L.N.Safronov |
ISP SB RAS Novosibirsk
|
Reactions control methods with radiation defects in Si under ion implantation.
|
V.N.Mordkovich
|
ITAM, Chernogolovka
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Ion synthesis of nanosilicides.
|
N.N.Gerasimenko
|
MIEE, Zelenograd
|
Defects, amorphization and diffusion under ion implantation.
|
D.I.Tetelbaum
|
NNSU, Nizhny Novgorod
|
Semiconductors proton beam-induced modification |
V.V.Kozlovsky, SPSPU, Saint-Petersburg.
|
Engineering of structural defects and luminiscent centers in Si light diodes implantation technology |
N.A.Sobolev |
PTI, Saint-Petersburg
|
Ion implantation in CdHgTe |
A.V.Voitsekhovsky |
TSU, Tomsk
|
Modification of metal nanocrystals with fast heavy ions |
F.Dzhurabekova |
University, Helsinki
|
Focused ion beams for "diamond" nanostructures formation |
S.Rubanov |
University, Melbourn
|
Radiation Effects in Si-Ge Quantum Size Structures |
N.A.Sobolev |
University of Aveiro, Portugal
|
Hemmological aspects of ion implantation in minerals and their synthesized analogues |
R.I.Khaibibullin, V.I.Nuzhdin, O.N.Lopatin, A.G.Nikolaev
|
PTU,Kazan |
Fast thermal processings in silicon-based microelectronics.
|
R.M.Bayazitov
|
KPTI, KazSC RAS, Kazan |
Direct mapping of strain depth distributions with a nanometer spatial resolution in ion implanted Si using Dark-Field Electron Holohraphy |
N.Cherkashin1, S.Reboh1, A.Lubk1, P.Pochet2, A.Claverie1 and M.J.Hÿtch1
|
1CEMES-CNRS, Toulouse, France
2CEA-INAC, Grenoble, France
|
Change of GaN properties under accelerated ion radiation |
P.A.Karasev |
Physical Electronics Chair, St.-P SPU, St.-P.
|
Ion sources and accelerators
for nuclear doping and boron neutron-trapping therapy |
A.A.Ivanov, A.V.Budakov, V.I.Davydenko |
INP SB RAS, Novosibirsk |
Primary state of damage in irradiated Si and GaN nanowires |
K.Nordlund, R.Wei, E.Holmstram, F.Djurabekova and A.Kuronen |
Department of Physics, University of Helsinki
|
Evolution of non-metallic materials electron subsystem affected by hard radiation: electron properties of radiated semiconductors.
|
V.N.Brudny |
TSU, Tomsk
|
Nanostructuring of titanium and ion implantation.
|
Yu.P.Sharkeev
|
IPAM SB RAS, Tomsk
|
Ion synthesis of narrow-band semiconductors A3B5 nanocrystals in silicon and silicon dioxide
|
F.F.Komarov, |
SRIAPP, BSU, Minsk
|
Formation of supernarrow p-n transitions in silicon by ion implantation.
|
A.F.Vyatkin |
IATM RAS, Chernogolovka
|
Plasm-immersive ion implantation and its perspective applications in technologies of nanoelectronics and nanostructures.
|
K.V.Rudenko, V.F.Lukichev, A.A.Orlikovsky
|
PTIAS, Moscow
|
The list of invited reports will be replenished.