LIST OF DOCTORANTS, POST-GRADUATES AND CO-RESEARCHERS WHO DEFENDED THEIR THESES SUPERVISED BY LAB. 24 STAFFERS (SINCE 1987):

1. N.V. Rogozina. Formation, growth and structureof mercury diiodide. PhD phys.-math. sci. Solid-state physiscs, NSU — ISP SB RAS. Supervised by L.N. Alexandrov, 1987.;
2. B.P. Surin. nternal friction and its application in studying the relaxation and anealing of silicon defects. PhD phys.-math. sci. Solid-state physics, MSU — ISP SB RAS. Supervised by L.N. Alexandrov, 1987.
3. A.A. Karanovich. Changes in silicon paramagnetic defects structureunder electron and neutron radiation. PhD phys.-math. sci. Semiconductor physics. Supervised by A.V. Dvurechenskii, 1988.
4. V.S. Getalov. Investigation of growth conditions of structurally perfect paratelluride crystal faces from themelting with Chokhralski method. PhD phys.-math. sci. Solid-state physics, SDTB of Monocrystals SB RAS — Kharkov RA ''Monocrystalreactive''. Supervised by L.N. Alexandrov, 1988.;
5. S.V. Lozovsky. Silocon band sublimational recrystallisation. PhD phys.-math. sci. Solid-state physics. Novocherkassk STU — ISP SB RAS. Supervised by L.N. Alexandrov, 1988.
6. A.T. Shliakhov. Effect of doping on structural defects composition in GaAs. PhD phys.-math. sci. Solid-state physics, ISP SB RAS — Leningrad Ped. Inst. Supervised by L.N. Alexandrov, 1990.
7. V.A. Menshikova Silicon avalanche photodiode. PhD phys.-math. sci. Semiconductor and insulator physics, ISP SB RAS — IAP ''Pulsar''. Supervised by L.N. Alexandrov, 1990.
8. S.N. Koliadenko. Oriented crystallisation of from silicon layers melt on structures Si02/Si under impulse millisecond heating. PhD phys.-math. sci. Semiconductor physics. Supervised by A.V. Dvurechenskii, 1991.
9. A.I. Yakimov. Hopping conduction and electron correlations in silicon with impurities that lead to deep levels. PhD phys.-math. sci.Semiconductor and insulator physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 1991.
10. Yu.A. Manzhosov. Silicon films recrystallisation in layer structures under nanosecond laser impact. PhD phys.-math. sci. Solid-state physics. ISP SB RAS. Supervised by A.V. Dvurechenskii, 1992.
11. O.A. Kuliasova. Modeling of thermal and thermoelastic fields, phase transitions under impulse heating in multilayer semiconductor structures. PhD phys.-math sci.Solid-state physics., ISP SB RAS. Supervised by L.N. Alexandrov, A.V. Dvurechenskii, 1992.
12. A.V. Rybin. Investigation of quantum dots spatial distribution in semiconductors radiated by high-energy ions. PhD phys.-math. sci. Semiconductor and insulator physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 1995.
13. L.A. Shcherbakova. Hopping conduction of amorphous porous silicon. PhD phys.-math. sci. Solid-state physics, IS SB RAS. Supervised by A.V. Dvurechenskii and A.I. Yakimov, 1997.
14. P.L. Novikov. Simulation of porous silicon formation processes and homoepitaxy on its surface. PhD phys.-math. sci. Semiconductor and insulator physics, ISP SB RAS. Supervised by L.N. Alexandrov and A.V. Dvurechenskii, 2000.
15. A.I. Yakimov. Electron phenomena in Ge and Si quantum dots arrays. Doc. phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2001.
16. A.V. Nenashev. Simulation of Ge QDs electron structure in Si. PhD phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2004.
17. V.A. Zinovyev. Processes on silicon surface at the low-energy ion impact under MBE. PhD phys.-math. sci. Semiconductor physics. ISP SB RAS. Supervised by A.V. Dvurechenskii, 2004.
18. A.G. Pogosov. Kinetic phenomena in solid electron billiards. Doc. phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Chaplik, 2007.
19. A.G. Milekhin. Spectroscopy of oscillation states of low-dimensional semiconductor systems. Doc. phys.-math. sci. Physics of condensed states, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2006.
20. Zh.V. Smagina. Effects of low-energy ion impact under heteroepitaxy of Ge/Si. PhD phys.-math. sci. Semiconductor physics, ISP SB RAS. Supervised by A.V. Dvurechenskii, 2008
21. Aigiul F. Zinovyeva: Spin relaxation in tunnel-bound Ge/Si quantum dot arrays. PhD in phys.-math. sci. Semiconductor physics. ISP SB RAS. Supervised by Anatoly V. Dvurechenskii, Doc. phys.-math sci. Professor, RAS Corresponding member.