LABORATORY OF NON-EQUILIBRIUM SEMICONDUCTOR SYSTEMS

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INSTITUTE OF SEMICONDUCTOR PHYSICS, SIBERIAN BRANCH OF THE RUSSIAN ACADEMY OF SCIENCES

 

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POST-GRADUATES AND CO-RESEARCHERS

Aigul F. Zinovyeva,

researcher,

PhD in phys.-math, sci.

Scientific activities:

    Investigation of spin and transport properties of charge carriers localised in quantum dots.

Educational background:

  • 1994 — graduated from the Novosibirsk State Uiversity on the speciality "physics".

Employment activities:

  • since 1994 — has been an ISP staffer .
  • 2008 — defended her PhD thesis in "Spin relaxation in tunnel-bound quantum dots arrays".
  • Presently, she is a staffer of the laboratory of non-equilibrium semiconductor systems as a researcher.

Selected publications:

  1. À. Â. Íåíàøåâ, À. Â. Äâóðå÷åíñêèé, À. Ô. Çèíîâüåâà. Ýôôåêò Çååìàíà äëÿ äûðîê â ñèñòåìå Ge/Si ñ êâàíòîâûìè òî÷êàìè // ÆÝÒÔ, 2003, ò. 123, ¹ 2, ñ. 362–372.
  2. A. V. Nenashev, A. V. Dvurechenskii, A. F. Zinovieva. Wave functions and g-factor of holes in Ge/Si quantum dots // Phys. Rev. B, 2003, v. 67, 205301.
  3. À. Â. Äâóðå÷åíñêèé, À. È. ßêèìîâ, À. Â. Íåíàøåâ, À. Ô. Çèíîâüåâà. Êâàíòîâûå òî÷êè Ge/Si âî âíåøíèõ ýëåêòðè÷åñêîì è ìàãíèòíîì ïîëÿõ // Ôèçèêà òâåðäîãî òåëà, 2004, ò. 46, ¹ 1, ñ. 60–62.
  4. A. V. Nenashev, A. V. Dvurechenskii, A. F. Zinovieva, E. A. Golovina. Zeeman Effect for Electrons and Holes in Ge/Si Quantum Dots // International Journal of Nanoscience, 2003, v. 2, No. 6, pp. 511–519.
  5. A. F. Zinovieva, À. V. Nenashev, A. V. Dvurechenskii. Hole spin relaxation during the tunneling between coupled quantum dots // Phys. Rev. B, 2005, v. 71, 033310.
  6. À. Ô. Çèíîâüåâà, À. Â. Íåíàøåâ, À. Â. Äâóðå÷åíñêèé. Ñïèíîâàÿ ðåëàêñàöèÿ äûðîê â Ge êâàíòîâûõ òî÷êàõ // Ïèñüìà â ÆÝÒÔ, 2005, ò. 82, âûï. 5, ñ. 336-340.
  7. À. Â. Äâóðå÷åíñêèé, À. Ô. Çèíîâüåâà, À. Â. Íåíàøåâ, À. È. ßêèìîâ, Í. Ï. Ñòåïèíà, Â. Â. Êèðèåíêî. Ñïèíîâûå ýôôåêòû â ãåòåðîñòðóêòóðàõ Ge/Si ñ êâàíòîâûìè òî÷êàìè // Èçâåñòèÿ ÂÓÇîâ. Ìàòåðèàëû ýëåêòðîííîé òåõíèêè, 2006, ¹2, ñ. 15–25.
  8. A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii. Fluctuation-stimulated spin relaxation in array of Ge quantum dots // 14 Int. Symposium "Nanostructures: Physics and Technology", St. Petersburg, June 26–30, 2006, p. 363–364.
  9. À. Ô. Çèíîâüåâà, À. Â. Íåíàøåâ, À. Â. Äâóðå÷åíñêèé. Ìåõàíèçì ñïèíîâîé ðåëàêñàöèè ïðè ïðûæêîâîì òðàíñïîðòå â äâóìåðíîì ìàññèâå àñèììåòðè÷íûõ êâàíòîâûõ òî÷åê // ÆÝÒÔ, 2007, ò. 132, ñ. 436–446.
  10. A.F. Zinoveva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov. R. Rubinger, N.A. Sobolev, J.P. Leit?o, M.C. Carmo. Spin resonance of electrons localized on Ge/Si quantum dots.// Phys. Rev. B, 2008, v. 77, p. 115319.

Last update: 05/07/2010

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