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Poster section C2
Date:Wednesday, 24 October
Time:14:00 - 15:30
Place:The hall before the Small House of Scientists, Novosibirsk
C2-1
N.M.Liadov1, Yu.N.Osin2, T.S.Kavetsky3, A.L.Stepanov1
Synthesis of silver nanoparticles under ion implantation of organically-nonorganic hybrid glass-polymer composites As2S3-ureasil
1E.K.Zavoisky Kazan Physico-Technical institute of RAS, Kazan
2Kazan Federal University, Kazan
3Ioan Franko Drogobychsk Pedagogical university, Drogobych, Ukraine
C2-2
N.M.Liadov, V.F.Valeev, V.I.Nuzhdin, A.L.Stepanov, I.A.Faizrakhmanov
Optical properties research of silver ion-implanted ZnO Al2O3
E.K.Zavoisky Kazan Physico-Technical Institute of Kaz SC, RAS, Kazan
C2-3
O.N.Gorshkov, D.A.Pavlov, I.N.Antonov, M.E.Shenina, A.Yu.Dudin, A.I.Bobrov, A.P.Kasatkin
Peculiarities of metallic nanoparticles formation in ZrO2(Y) matrix with the method of ion implantation
N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
C2-4
V.V.Privezentev1, V.S.Kulikauskas2, V.V.Zatekin2, D.V.Petrov2, A.V.Makunin2, A.A.Shemukhin2, A.V.Putrik3
Effect of annealing temperature and atmosphere for nanoparticles formation in silicon by the method of ion doping with zinc
1RAS Physico-Technological Institute, Moscow
2D.V.Skobeltsin RINP, M.V.Lomonosov MSU, Moscow
3B.N.Eltsin Ural Federal State University, Yekaterinburg
C2-5
E.V.Medvedeva, S.S.Aleksandrova
Quantitative analysis of disoriented nanoblock structure obtained by ion-beam processing
Institute of Electrophysics, UrB of RAS, Yekaterinburg
C2-6
A.A.Dmitrievsky1, N.Yu.Efremova1, A.R.Lovtsov1, E.Yu.Isaeva1, M.V.Badylevich2
Influence of low-intensity beta-radiation on thin films-on-silicon physico-mechanical properties
1G.R.Derzhavin Tambov State University, Tambov
2Light and Lighting Laboratory, Catholic University College Gent, Gent, Belgium
C2-7
V.L.Levshunova1, G.P.Pokhil2, D.I.Tetelbaum1, P.N.Chernykh2
Fast ion emission from the reverse side of gallium arsenide wafer under front side radiation by 2-MeV hellium ions
1Research Physico-Technical Institute NSSU, Nizhny Novgorod
2RINP of MSU Moscow
C2-8
A.A/Kolotov, V.Ya.Bayankin, S.G.Bystrov
Mass transfer in metals under pulse ion radiation
Physico-Technical Institute of UrB RAS, Izhevsk
C2-9
A.Yu.Drozdov1, N.M.Sazonova1, V.Ya.Bayankin1, I.L.Nagornykh2
Molecular-dynamic shock wave simulation in iron-based amorphous alloys
1Physico-Technical institute of UrB RAS, Izhevsk
2Institute of Mechanics of UrB RAS, Izhevsk
C2-10
P.V.Bykov, V.L.Vorobyev, V.Ya.Bayankin
Formation of surface layers composition, change of surface morphology and carbon steel mechanical properties depending on manganese ion energy
Physico-Technical Institute of UrB RAS, Izhevsk
C2-11
O.V.Obidina, I.V.Tereshko, V.P.Redko
Long-distance action effect in metals and alloys after radiating them in glow discharge plasma
Belarus-Russian University, Mogilev, Belarus
C2-12
V.V.Poplavsky, I.M.Bely, A.V.Dorozhko
Peculiarities of catalitically active layers formation based on glass-carbon using an electric-bow ion source
Belarus State Technological University, Minsk, Belarus
C2-13
V.A.Fedorov1, Yu.A.Kochergina1, L.G.Karyev2, A.A.Lobachev1
Research of physicochemical processes and properties of ion crystals under metal implantation in thermoelectric impact conditions
1G.R.Derzhavin Tambov State University, Tambov
2Yamalo-Nenetsk Affiliated Branch of the Tyumen State Oil-Gas University, New Urengoi (Novy Urengoi)
C2-14
A.A.Ismailov1, N.A.Melikov2
Electro-physical properties of TIS monocrystals
1Academician G.M.Abdullaev Institute of Physics, NAS of Aizerbaidjan, Baku
2Aizerbaidjan technixcal University
C2-15
D.S.Petukhov1, T.B.Charikova1, O.E.Petukhova1, A.A.Ivanov2
Anisotropy of galvanmagnetic properties in the quasi two-dimensional superconductive compound Nd2-xCexCuO4+δ with a different level of cerium doping and a different degree of nonstechiometric disorder
1Institute of Metal Physics of UrB RAS, Yekaterinburg.
2Moscow Sate Engineering-Physical Institute, Moscow
C2-16
N.S.Filippov, M.A.Parashchenko, N.V.Vandysheva, O.I.Semenova, S.S.Kosolobov, S.I.Romanov
Developing electrokinetic filters using plasma-stimulated silicon deposition
CA.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
C2-17
D.Melebaev, A.M.Tashlieva
Determining Ga2O3 band gap width with the photoelectric method
Physico-Mathematical Institute of the Academy of Sciencies of Turkmenistan, Ashkhabad
C2-18
I.G.Pashaev, I.A.Abuzerov
Effect of different metallic layers microstructure on Shottky diodes electrophysical properties
Baku State University, Baku, Aizerbaidjan
C2-19
I.K.Beisembetov, N.B.Beisenkhanov, S.K.Zharikov, B.K.Kenzhaliev, K.H.Nusupov, T.K.Ahmetov
Ion synthesis and and properties of silicon carbide films and carbon
Kazakhstan-British Technical University, Almaty