C1-1 |
A.I.Gumarov1, N.M.Liadov2, E.I.Dulov1, V.F.Valeev2, N.Dogan3, B.Z.Rameev2,3,
A.Mackova4,5, V.Hnatowicz5, L.R.Tagirov1,2, R.I.Haibullin1,2
Investigating the effect of
substrate temperature on structural and magnetic properties of ZnO, implanted by Fe or
Co ions 1Kazan (Privolzhsk)Federal University, Kazan
2Kazan Physico-Technical Institute of the KSC, RAS
3Gebze Institute of Technology, Gebze-Kocaeli, Turkey
4Nuclear Physics Institute of the AS CR, Rez 130, Czech Republic
5Department of Physics, J.E. Purkinje University, Usti nad Labem, Czech Republic |
C1-2 |
G.G.Gumarov
, A.V.Alekseev, V.Yu.Petuhov, V.F.Valeev
Dose dependence of magnetic
properties of iron silicides ion-synthesized in external magnetic field E.K.Zavoisky Kazan Physico-Technical Institute of the KAZSC, RAS, Kazan
|
C1-3 |
N.N.Halitov1,2, M.N.Liadov1, V.A.Shustov1, R.I.Haibullin
1,2, I.A.Faizrakhmanov1,2, P.A.Gorbatova2, V.V.Parfenov2
Formation of nanocomposite films of BaTiO3:Co multi-
ferroics with the ion-stimulated deposition method
1Kazan Physico-Technical Institute, Kazan
2Kazan Federal University, Kazan |
C1-4 |
E.E.Rodiankina1, S.S.Kosolobov1,2, A.V.Latyshev1,2
Silicon surface morphology under
epitaxial growth and sublimation 1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosibirsk
|
C1-5 |
G.F.Karlova1, G.I.Koltsov2, S.Yu.Yurchuk2
Ion implantation of beryllium into galium
arsenide and the possibility of its use in producing heterobipolar transistors
1OJSC "Research institute of Semiconductor Devices", Tomsk
2RTU MIS, Moscow |
C1-6 |
N.N.Gerasimenko1, N.Medetov1, Yu.A.Ryabkin2, S.Zh.Tokmoldin2, K.B.Tynyshtykbaev2
About the same common origin of radiation and non-radiaiton
cracks with the example of anode-etched C-Si (100)
1MIET, Zelenograd
2Physico-Technical Institute MES KR, Almati
|
C1-7 |
R.S.Madatov, C.B.Tagiev, Yu.M.Mustafaev, F.P.Abasov
Influence of penetrating
radiaition on photoelectric properties of GaS and GaS:Er monocrystals
Institute of Radiation Problems of the Aizerbaidjan NAS, Baku
|
C1-8 |
A.V.Zhelannov1, V.E.Udaltsov2, D.G.Fedorov
1,2
Use of ion implantation in ohmic
contacts formation to diode structures based on gallium nitride
1OJSC "RDB - Planet", Novgorod-the-Great (Veliky Novgorod)
2Ya.Mudry Novgorod State University, Novgorod-the-Great (Veliky Novgorod)
|
C1-9 |
A.K.Shestakov, K.S.Zhuravlev
Computer research of electro-physical processes in ion-
doped field GaAs-transistor with Shottky gate at the change of the channel profile
doping parameters
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
|
C1-10 |
I.I.Izhnin
1, E.I.Fitsych1,
A.Yu.Bonchik2,
G.V.Savitsky2,
A.V.Voitsekhovsky3,
S.A.Dvoretsky4, N.N.Mikhailov4, Yu.G.Sidorov4, V.S.Varavin4, K.D.Mynbaev5
Defect
structure relaxation of epitaxial CdHgTe films subjected to low- and high-energy ion
processing
1Scientific-production Enterprise "Karat", Lvov, Ukraine
2Ya.S.Pidsrtrigach Institute of Applied problems of Mechanics and Mathematics, NAS of Ukraine, Lvov
3Tomsk State University, Tomsk
4A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
5A.F.Ioffe Physico-Technical Institute, St.-Petersburg
|
C1-11 |
A.V.Voitsekhovsky1, N.H.Talipov2
Influence of power IR impulse laser radiation on
boron-implanted p-type heteroepitaxial
CdxHg1-xTe layers
1Tomsk State University, Tomsk
2Peter-the-Great Military Academy of Rocket Strategic Troops, Moscow
|
C1-12 |
G.V.Baranov, A.G.Italiantsev, O.M.Orlov
Implanted As redistribution under radiation
defect-stimulated diffusion OJSC "RIME", Moscow, Zelenograd
|
C1-13 |
M.V.Dragut'1,2, D.A.Usik1, D.M.Misharin1
Estimate of depleted surface GaAs region
after SCE with the layer-by-layer chemical etching method
1OJSC "RDB - Planet", Veliky Novgorod
2Ya.Mudry Novgorod State University, Veliky Novgorod
|
C1-14 |
A.A.Koshkarev, A.V.Nenashev,
A.V.Dvurechenskii
Registration of anisotropy
incalculating elestic deformation in quantum wires and dots
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk |
C1-15 |
V.V.Karzanov, N.A.Karpov
Effect of silicon implantation on AlN luminescent properties
N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
|
C1-16 |
P.A.Kuchinskaya1, V.A.Zynovyev1,
A.V.Nenashev1,2,
V.A.Armbrister1, A.V.Dvurechenskii1,2
QDs spatial organization into ring chains in multilayer Ge/Si
structures
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
2Novosibirsk State University, Novosibirsk |
C1-17 |
A.A.Ghismatulin1, A.H.Antonenko1,2, G.N.Kamaev1,2, G.A.Kachurin1, S.G.Cherkova1,2, A.G.Cherkov1,2, V.A.Skuratov3
Electro-physical properties of multilayer
structures with Si nanoclusters form with high-energy Xe ion radiation.
Si/SiO2
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosiirsk
3United Nuclear Research Institute, Dubna
|
C1-18 |
F.F.Komarov1, Yu.Zhuk2, L.A.Vlasukova1, O.V.Milchanin1, V.Vesh3, E.Vendler3,
M.V.Greben1, M.A.Mokhovikov1, I.N.Parkhomenko1
Structure and optical properties of
silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis
1Belarus State University, Minsk, Belarus
2M. Curi-Skladowska University, Lublin, Poland
3F. Schiller University Jena, Jena, Germany
|
C1-19 |
V.A.Lastkin2, A.S.Ionov2, V.V.Gavrushko1
Research of doping silicon ion-diffusion
profiles by arsenic
1Ya.Mudry Novgorod State University, Novgorod-the-Great (Veliky Novgorod)
2OJSC "RDB - Planet", Novgorod-the-Great (Veliky Novgorod)
|
C1-20 |
R.I.Batalov1, R.M.Bayazitov1, G.A.Novikov1, N.V.Kurbatova
1, P.I.Gaiduk2, G.D.Ivlev2, S.L.Prokopyev2
SiGe/Si heterostructures formation with magnetron spraying methods
and nanosecond ion/laser annealing
1E.K.Zavoisky Kazan Physico-Technical Institute of the KazSC, RAS, Kazan
2Belarus State University, Minsk, Belarus |
C1-21 |
D.I.Tetelbaum1, A.N.Mikhailov1, D.V.Guseinov1, A.I.Belov1, A.B.Kostiuk1, D.S.Korolev1, M.P.Fedonin2, D.A.Pavlov2, A.I.Bobrov2, V.N.Trushin1, A.S.Markelov1
Peculiarities of
ion-beam impact on silicon and aluminum oxides layers having Au nanoclusters
1N.I.Lobachevsky Research Institute of the Nizhegorod State University, Nizhny Novgorod
2Physical Faculty of N.I.Lobachevsky Nizhegorod State university, Nizhny Novgorod
|
C1-22 |
S.N.Nagornykh1, V.I.Pavlenkov1, I.A.Chugrov1, A.V.Ershov1, A.N.Mikhailov1, A.I.Belov1, D.I.Tetelbaum1, D.I.Kryzhkov2, L.V.Krasilnikova2
About the influence of silicon
mnanocrystals size on the temperature dependence of photoluminescence spectra
1N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
2Institute of Microstructures Physics, RAS, Nizhny Novgorod
|
C1-23 |
A.O.Timofeeva, A.I.Belov, A.N.Mikhailov,
D.I.Tetelbaum
Effect of built-in electric field
under ion radiation of silicon for the secondary radiation defects system
Research Physico-Technical Institute of N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
|
C1-24 |
A.N.Mikhailov1,
D.S.Korolev1, A.B.Kostiuk1, A.I.Belov1,D.I.Tetelbaum1, D.A.Grachev2,
I.A.Chugrov2, A.V.Ershov2
Influence of radiation with Au, Er and Zr ions on the optical
properties of oxide structures with Si nanocrystals
1
Research Physico-Technical Institutute of N.I.Lobachevsky NNSU, Nizhny Novgorod
2N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod |
C1-25 |
T.H.Hasanov
Oxygen and water vapor diffusion on the silicon dioxide - silicon
interface
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
|
C1-26 |
D.I.Rogilo1,2, L.I.Fedina1,
S.S.Kosolobov1,2, A.V.Latyshev1,2
A change of kinetic
limitations of high-temperature Si growth on Si(111)-(7×7)
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
2Novosibirsk State University,Novosibirsk
|
C1-27 |
V.N.Popok1, J.Samela2, K.Nordlund2, V.P.Popov3
Radiation Damage in Diamond by
Implantation of Argon Cluster Ions
1Department of Physics and Nanotechnology, Aalborg University, Denmark
2Department of Physics and Helsinki Institute of Physics, University of Helsinki, Finland
3Institute of Semiconductor Physics, Novosibirsk
|
C1-28 |
I.E.Tyschenko1, V.A.Volodin1,2, V.P.Popov1
Crystallization of SOI films implanted with
big hydrogen ion doses and annealed at the millisecond pulse regime
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
2Novosibirsk State University,Novosibirsk
|
C1-29 |
O.N.Gorshkov,
D.A.Pavlov, I.N.Antonov, M.E.Shenina, A.Yu.Dudin, A.I.Bobrov,
A.P.Kasatkin, K.V.Sidorenko
Investigation of gold nanodimensional particles formation
process in germanium dioxide thin films by ion implantation method
N.I.Lobachevsky Research Physico-Technical Institute of the Nizhegorod State University, Nizhny
Novgorod.
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