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Poster section C1
Date:Tuesday, 23 October
Time:14:00 - 15:30
Place:The hall before the Small House of Scientists , Novosibirsk
C1-1
A.I.Gumarov1, N.M.Liadov2, E.I.Dulov1, V.F.Valeev2, N.Dogan3, B.Z.Rameev2,3, A.Mackova4,5, V.Hnatowicz5, L.R.Tagirov1,2, R.I.Haibullin1,2
Investigating the effect of substrate temperature on structural and magnetic properties of ZnO, implanted by Fe or Co ions
1Kazan (Privolzhsk)Federal University, Kazan
2Kazan Physico-Technical Institute of the KSC, RAS
3Gebze Institute of Technology, Gebze-Kocaeli, Turkey
4Nuclear Physics Institute of the AS CR, Rez 130, Czech Republic
5Department of Physics, J.E. Purkinje University, Usti nad Labem, Czech Republic
C1-2
G.G.Gumarov , A.V.Alekseev, V.Yu.Petuhov, V.F.Valeev
Dose dependence of magnetic properties of iron silicides ion-synthesized in external magnetic field
E.K.Zavoisky Kazan Physico-Technical Institute of the KAZSC, RAS, Kazan
C1-3
N.N.Halitov1,2, M.N.Liadov1, V.A.Shustov1, R.I.Haibullin 1,2, I.A.Faizrakhmanov1,2, P.A.Gorbatova2, V.V.Parfenov2
Formation of nanocomposite films of BaTiO3:Co multi- ferroics with the ion-stimulated deposition method
1Kazan Physico-Technical Institute, Kazan
2Kazan Federal University, Kazan
C1-4
E.E.Rodiankina1, S.S.Kosolobov1,2, A.V.Latyshev1,2
Silicon surface morphology under epitaxial growth and sublimation
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosibirsk
C1-5
G.F.Karlova1, G.I.Koltsov2, S.Yu.Yurchuk2
Ion implantation of beryllium into galium arsenide and the possibility of its use in producing heterobipolar transistors
1OJSC "Research institute of Semiconductor Devices", Tomsk
2RTU MIS, Moscow
C1-6
N.N.Gerasimenko1, N.Medetov1, Yu.A.Ryabkin2, S.Zh.Tokmoldin2, K.B.Tynyshtykbaev2
About the same common origin of radiation and non-radiaiton cracks with the example of anode-etched C-Si (100)
1MIET, Zelenograd
2Physico-Technical Institute MES KR, Almati
C1-7
R.S.Madatov, C.B.Tagiev, Yu.M.Mustafaev, F.P.Abasov
Influence of penetrating radiaition on photoelectric properties of GaS and GaS:Er monocrystals
Institute of Radiation Problems of the Aizerbaidjan NAS, Baku
C1-8
A.V.Zhelannov1, V.E.Udaltsov2, D.G.Fedorov 1,2
Use of ion implantation in ohmic contacts formation to diode structures based on gallium nitride
1OJSC "RDB - Planet", Novgorod-the-Great (Veliky Novgorod)
2Ya.Mudry Novgorod State University, Novgorod-the-Great (Veliky Novgorod)
C1-9
A.K.Shestakov, K.S.Zhuravlev
Computer research of electro-physical processes in ion- doped field GaAs-transistor with Shottky gate at the change of the channel profile doping parameters
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
C1-10
I.I.Izhnin 1, E.I.Fitsych1, A.Yu.Bonchik2, G.V.Savitsky2, A.V.Voitsekhovsky3, S.A.Dvoretsky4, N.N.Mikhailov4, Yu.G.Sidorov4, V.S.Varavin4, K.D.Mynbaev5
Defect structure relaxation of epitaxial CdHgTe films subjected to low- and high-energy ion processing
1Scientific-production Enterprise "Karat", Lvov, Ukraine
2Ya.S.Pidsrtrigach Institute of Applied problems of Mechanics and Mathematics, NAS of Ukraine, Lvov
3Tomsk State University, Tomsk
4A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
5A.F.Ioffe Physico-Technical Institute, St.-Petersburg
C1-11
A.V.Voitsekhovsky1, N.H.Talipov2
Influence of power IR impulse laser radiation on boron-implanted p-type heteroepitaxial CdxHg1-xTe layers
1Tomsk State University, Tomsk
2Peter-the-Great Military Academy of Rocket Strategic Troops, Moscow
C1-12
G.V.Baranov, A.G.Italiantsev, O.M.Orlov
Implanted As redistribution under radiation defect-stimulated diffusion
OJSC "RIME", Moscow, Zelenograd
C1-13
M.V.Dragut'1,2, D.A.Usik1, D.M.Misharin1
Estimate of depleted surface GaAs region after SCE with the layer-by-layer chemical etching method
1OJSC "RDB - Planet", Veliky Novgorod
2Ya.Mudry Novgorod State University, Veliky Novgorod
C1-14
A.A.Koshkarev, A.V.Nenashev, A.V.Dvurechenskii
Registration of anisotropy incalculating elestic deformation in quantum wires and dots
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
C1-15
V.V.Karzanov, N.A.Karpov
Effect of silicon implantation on AlN luminescent properties
N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
C1-16
P.A.Kuchinskaya1, V.A.Zynovyev1, A.V.Nenashev1,2, V.A.Armbrister1, A.V.Dvurechenskii1,2
QDs spatial organization into ring chains in multilayer Ge/Si structures
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
2Novosibirsk State University, Novosibirsk
C1-17
A.A.Ghismatulin1, A.H.Antonenko1,2, G.N.Kamaev1,2, G.A.Kachurin1, S.G.Cherkova1,2, A.G.Cherkov1,2, V.A.Skuratov3
Electro-physical properties of multilayer structures with Si nanoclusters form with high-energy Xe ion radiation. Si/SiO2
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosiirsk
3United Nuclear Research Institute, Dubna
C1-18
F.F.Komarov1, Yu.Zhuk2, L.A.Vlasukova1, O.V.Milchanin1, V.Vesh3, E.Vendler3, M.V.Greben1, M.A.Mokhovikov1, I.N.Parkhomenko1
Structure and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis
1Belarus State University, Minsk, Belarus
2M. Curi-Skladowska University, Lublin, Poland
3F. Schiller University Jena, Jena, Germany
C1-19
V.A.Lastkin2, A.S.Ionov2, V.V.Gavrushko1
Research of doping silicon ion-diffusion profiles by arsenic
1Ya.Mudry Novgorod State University, Novgorod-the-Great (Veliky Novgorod)
2OJSC "RDB - Planet", Novgorod-the-Great (Veliky Novgorod)
C1-20
R.I.Batalov1, R.M.Bayazitov1, G.A.Novikov1, N.V.Kurbatova 1, P.I.Gaiduk2, G.D.Ivlev2, S.L.Prokopyev2
SiGe/Si heterostructures formation with magnetron spraying methods and nanosecond ion/laser annealing
1E.K.Zavoisky Kazan Physico-Technical Institute of the KazSC, RAS, Kazan
2Belarus State University, Minsk, Belarus
C1-21
D.I.Tetelbaum1, A.N.Mikhailov1, D.V.Guseinov1, A.I.Belov1, A.B.Kostiuk1, D.S.Korolev1, M.P.Fedonin2, D.A.Pavlov2, A.I.Bobrov2, V.N.Trushin1, A.S.Markelov1
Peculiarities of ion-beam impact on silicon and aluminum oxides layers having Au nanoclusters
1N.I.Lobachevsky Research Institute of the Nizhegorod State University, Nizhny Novgorod
2Physical Faculty of N.I.Lobachevsky Nizhegorod State university, Nizhny Novgorod
C1-22
S.N.Nagornykh1, V.I.Pavlenkov1, I.A.Chugrov1, A.V.Ershov1, A.N.Mikhailov1, A.I.Belov1, D.I.Tetelbaum1, D.I.Kryzhkov2, L.V.Krasilnikova2
About the influence of silicon mnanocrystals size on the temperature dependence of photoluminescence spectra
1N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
2Institute of Microstructures Physics, RAS, Nizhny Novgorod
C1-23
A.O.Timofeeva, A.I.Belov, A.N.Mikhailov, D.I.Tetelbaum
Effect of built-in electric field under ion radiation of silicon for the secondary radiation defects system
Research Physico-Technical Institute of N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
C1-24
A.N.Mikhailov1, D.S.Korolev1, A.B.Kostiuk1, A.I.Belov1,D.I.Tetelbaum1, D.A.Grachev2, I.A.Chugrov2, A.V.Ershov2
Influence of radiation with Au, Er and Zr ions on the optical properties of oxide structures with Si nanocrystals
1 Research Physico-Technical Institutute of N.I.Lobachevsky NNSU, Nizhny Novgorod
2N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
C1-25
T.H.Hasanov
Oxygen and water vapor diffusion on the silicon dioxide - silicon interface
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
C1-26
D.I.Rogilo1,2, L.I.Fedina1, S.S.Kosolobov1,2, A.V.Latyshev1,2
A change of kinetic limitations of high-temperature Si growth on Si(111)-(7×7)
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
2Novosibirsk State University,Novosibirsk
C1-27
V.N.Popok1, J.Samela2, K.Nordlund2, V.P.Popov3
Radiation Damage in Diamond by Implantation of Argon Cluster Ions
1Department of Physics and Nanotechnology, Aalborg University, Denmark
2Department of Physics and Helsinki Institute of Physics, University of Helsinki, Finland
3Institute of Semiconductor Physics, Novosibirsk
C1-28
I.E.Tyschenko1, V.A.Volodin1,2, V.P.Popov1
Crystallization of SOI films implanted with big hydrogen ion doses and annealed at the millisecond pulse regime
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk
2Novosibirsk State University,Novosibirsk
C1-29
O.N.Gorshkov, D.A.Pavlov, I.N.Antonov, M.E.Shenina, A.Yu.Dudin, A.I.Bobrov, A.P.Kasatkin, K.V.Sidorenko
Investigation of gold nanodimensional particles formation process in germanium dioxide thin films by ion implantation method
N.I.Lobachevsky Research Physico-Technical Institute of the Nizhegorod State University, Nizhny Novgorod.