11.05.2012 Attention! The deadline for registration and abstract submission is extended to June 1, 2012.
28.02.2012 Welcome to visit our Conference site!
Contacts
Fax: +7(383)333-27-71
E-mail:
Irina V. Antonovna - Scientific Secretary of the Conference
Phone: +7(383)333-06-99
Svetlana A. Tychinskaya
Phone: +7(383)333-24-88
Address
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences. 13 ac. Lavrentyev aven., 600090, Novosibirsk, Russia.
SCIENTIFIC TRENDS OF THE CONFERENCE
At the forthcoming Conference it is supposed to consider reports and messages on the following trends:
General physical and physico-chemical problems of ion implantation and radiation solid state physics, physical phenomena in electric and thermal fields.
Physical problems of ion implantation in semiconductors.
Physical problems of ion implantation in non-semiconductor materials.
Ion-ray formation of nanostructures, objects of spintronics and their properties.
Physical long-distance phenomena under ion radiation and adjacent points.
Physical problems of ion implantation technology and focused ion beams.
Application of radiation-thermal processes in nanotechnology.
Investigation methods of radiation-thermal modification of materials properties.
