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Session 9. Chairman - R.I.Haibullin
Date:Thursday, 25 October
Time:09:00-11:00
Place: Small House of Scientists , Novosibirsk
Invited reports
09:00 - 09:30
N.A.Sobolev
Engineering of structural defects and luminescent centres in Si light diodes implantation technology
A.F.Ioffe Physico-Technical Institute, St.-Petersburg
09:30 - 10:00
K.Nordlund
, R.Wei, E.Holmström, and A.Kuronen
Molecular dynamics simulations of the primary state of damage in irradiated Si and GaN nanowires
Department of Physics University of Helsinki, Finland
10:00 - 10:15
I.V.Antonova1, V.A.Skuratov2, I.Balberg3
Ge nanocrystals formation in SiO2 and Al2O3 with high-energy ions
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2United Institute of Nuclear research, Dubna
3The Racah Institute of Physics, Hebrew University, Jerusalem, Israel
10:15 - 10:30
S.A.Krivelevich
, N.P.Pron, D.D.Korshunova
Nanostructures formation in ion- synthesized silica layers
The Yaroslavl Affiliated Branch of RAS Physico-Technological Institute, Yaroslavl
10:30 - 10:45
G.A.Kachurin1, S.G.Cherkova1,2, V.A.Volodin1,2, A.G.Cherkov1,2, D.V.Marin1,2, G.N.Kamaev1,2, A.H.Antonenko1,2, V.A.Skuratov3
Light-rediating nanostructures formation by fast heavy ions implantation into alternating Si/SiO2nanolayers
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosibirsk
3United Institute of Nuclear Research, Dubna
10:45 - 11:00
A.N.Mikhailov1, A.I.Belov1, A.O.Timofeeva1, V.K.Vasilyev1, I.Yu.Zhavoronkov1, A.V.Barsukov1, D.S.Korolev1, D.I.Tetelbaum1, V.I.Sakharov2, I.T.Serenkov2, E.I.Shek2, N.A.Sobolev2
Ion-beam modification of silicon-based nanostructures, emitting light at wavelength 1.5 mcm
1Research Physico-Technical Institute of N.I.Lobachevsky, Nizhny Novgorod
2A.F.Ioffe Physico-Technical Institute, St.-Petersburg