Back
Session 7. Chairman - A.V.Latyshev
Date:Wednesday, 24 October
Time:15:30-17:15
Place: Small House of Scientists, Novosibirsk
Invited reports
15:30 - 16:00
D.I.Tetelbaum, A.N.Mikhailov
Secondary defect formation in silicon under ion radiation
Research Physico-Technical Institute of N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
16:00 - 16:30
L.I.Fedina
Topological {113}-defects in Si as a result of own interstitial atoms and vacancies clusterization
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
16:30 - 17:00
N.Cherkashin
, S.Reboh, A.Lubk, P.Pochet, A.Claverie and M.J.Hÿtch
Direct mapping of strain depth distributions with a nanometer spatial resolution in ion implanted Si using Dark-Field Electron Holography
CEMES, Université de Toulouse, Toulouse, France CEA UJF, INAC, Lab Simulat Atomist (L_ Sim), Grenoble, France
17:00 - 17:15
K.V.Feklistov
, L.I.Fedina, A.G.Cherkov
Ordering boron precipitants ensamble as a layered distribution: considering the influence of implantation defects on the ripening of the Ostwald ensamble
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk