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Session 6. Chairman - F.F.Komarov
Date:Wednesday, 24 October
Time:11:00-12:45
Place: Small House of Scientists , Novosibirsk
11:00 - 11:15
I.E.Tyschenko
Radiation-resistant SOI structures with ion-modified buried insulator
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
11:15 - 11:30
N.A.Dobychin
, V.V.Karzanov
Photoluminescence of silicon-enriched silicon nitride
N.I.Lobachevsky Nizhegorod State university, Nizhny Novgorod
11:30 - 11:45
A.A.Liamkina, S.P.Moshchenko, V.G.Kesler
Plasmon resonance frequency control in indium nanodrops under oxygen ion oxidation in Townsend charge plasma
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
11:45 - 12:00
Zh.V.Smagina1, A.V.Dvurechenskii1,2, P.L.Novikov1, A.V.Nenashev1,2, N.P.Stepina1, S.A.Rudin1
Epitaxial growth of Ge nanocrystals on patterning Si surface with ion irradiation
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosibirsk
12:00 - 12:15
S.V.Sitnikov1, S.S.Kosolobov1,2, A.V.Latyshev1,2
Kinetics of 3D submicron structures relaxation on the Si(111) atomic-smooth surface
1A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
2Novosibirsk State University, Novosibirsk
12:15 - 12:30
I.K.Beysembetov, N.B.Beysekhanov, S.K.Zharikov, B.K.Kenzhaliev, K.N.Nusupov, T.K.Ahmetov
Thin silicon carbide films synthesis
Kazakhstan-British Technical University, Kazakhstan
12:30 - 12:45
I.R.Vakhitov1,2, A.A.Achkeev1, V.F.Valeev2, E.N.Dulov1, I.A.Faizrakhmanov2, L.R.Tagirov1, R.I.Haibullin1,2, M.Dobeli3
Influence of iron ions implantation regimes and subsequent thermal annealing on rutile magnetic phase composition (TiO2)
1Kazan Federal University, Kazan
2Kazan Physico-Technical Institute, Kazan
3Swiss Higher Technical School, Zurich