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Session 5. Chairman - A.F.Vyatkin
Date:Wednesday, 24 October
Time:9:00-10:45
Place: Small House of Scientists , Novosibirsk
Invited reports
09:00 - 09:30
P.A.Karasev
, A.I.Titov
Change of GaN properties under accelerated ion radiation
St.-Petersburg State Polytechnical University, St.-P.
09:30 - 10:00
A.V.Voitsekhovsky 1
, N.H.Talipov2
Ion implantation in CMT
1National Research Tomsk State University, Tomsk
2Peter-the Great Military Academy of RST, Moscow
10:00 - 10:15
N.A.Dobychin, V.V.Karzanov,
  �.V.Semenova
Ion implantation-induced defects in silicon nitride
N.I.Lobachevsky Nizhegorod State University, Nizhny Novgorod
10:15 - 10:30
O.V.Naumova
, B.I. Fomin, M.A. Ilnitsky, V.P. Popov
Influence of ion implantation on charge accumulation in Si/SiO2 systems of SOI structures under ionizing radiation
A.V.Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk
10:30 - 10:45
O.A.Podsvirov1, P.A.Karasev1, A.Ya.Vinogradov2, V.S.Belyakov1, A.V.Arkhipov1, K.V.Karabeshkin1, N.N.Karasev3, E.N.Shubina1, �.�.�����1
Effect of ion bombardment for α-C:H film properties
1St.-Petersburg State Polytechnical University, St.-Petersburg
2A.F.Ioffe Physico-Technical Institute, St.-Petersburg
3St.-Petersburg State University of Information Technologies, Mechanics and Optics, St.-Petersburg