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Session 4. Chairman - R.M.Bayazitov
Date:
Tuesday, 23 October
Time:
17:30-19:00
Place:
Small House of Scientists , Novosibirsk
Invited reports
17:30 - 18:00
N.G.Kolin
1
, L.S.Smirnov
2
Nuclear semiconductor doping. Current state and perspectives
1
Affiliated Branch of FSUE L.Ya.Karpov RPCI'
2
A.V.Rzhanov Institute of Semiconductor Physic, SB RAS, Novosibirsk
18:00 - 18:30
V.A.Bykov
, K.Yu.Borisov, A.V.Bykov, V.V.Kotov, V.V.Polyakov
Cluster technological lines of micro- and nanoelectronics using the systems of multi- beam maskless lithography
Group of "NT-MDT" enterprises, Moscow
18:30 - 19:00
A.F.Vyatkin
Formation of super-narrow p-n junctions in silicon by ion implantation
Institute of the Problems of Microelectronics Technology and Ultra-Pure Materials, RAS, Chernogolovka